Stress characterization of electroplated gold layers for low temperature surface micromachining

Margesin, B.; Bagolini, Alvise; Guarnieri, V.; Giacomozzi, F.; Faes, A.; Pal, R.; Decarli, M.

doi:10.1109/dtip.2003.1287077

Cited by 44 publications

(42 citation statements)

References 5 publications

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“…Temperature may induce a relaxation effect on the residual stress (Epp 2011;Medvedeva et al 2011). Therefore after few thermal loading cycles residual stress effect may look vanishing as in (Margesin et al 2003;Mulloni et al 2010). This fact may motivate even significant differences in pull-in and pull-out values after a defined period.…”

Section: Residual Stress and Mechanical Couplingmentioning

confidence: 94%

“…Microfabrication procedure followed patented procedure ''RF Switch (RFS) Surface Micromachining'', fully described in (Margesin 2003;Subhadeep et al 2006). Material is Gold, exhibiting a good electric conduction with a reduced sensitivity to wear and corrosion.…”

Section: Methodologiesmentioning

confidence: 99%

“…Differences in the thermal expansion coefficients of gold an chrome, respectively used in the RF-MEMS process cause a residual strain distribution within the RF-MEMS after removal of chrome sacrificial layers. In microcantilever this effect is evident, because its free end is displaced from line axis and beam shows a curvature (Margesin et al 2003). Residual strain is easily identified because curvature is first measured by a profiling system, then microbeam models allow computing the amount of average strain present.…”

Section: Residual Stress and Mechanical Couplingmentioning

confidence: 98%

“…Only in case of buckling, even this small difference may induce the collapse in a defined direction. Significantly larger effects are detected if residual stress is present on the microswitch after the microfabrication process (Margesin et al 2003). Therefore evaluating the amount of residual stress on the microstructure is a key action of the microtechnological characterization of MEMS (Tabata et al 2008;Szabo et al 2009).…”

Section: Heating Of Electromechanically Uncoupled Microsystemmentioning

confidence: 99%

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Role of the electro-thermo-mechanical multiple coupling on the operation of RF-microswitch

Brusa

Munteanu

2012

Microsyst Technol

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A phenomenological approach is proposed to identify some effects occurring within the structure of the microswitch conceived for radio frequency application. This microsystem is operated via a nonlinear electromechanical action imposed by the applied voltage. Unfortunately, it can be affected by residual stress, due to the microfabrication process, therefore axial and flexural behaviors are strongly coupled. This coupling increases the actuation voltage required to achieve the so-called ''pull-in'' condition. Moreover, temperature may strongly affect strain and stress distributions, respectively. Environmental temperature, internal dissipation of material, thermo-elastic and Joule effects play different roles on the microswitch flexural displacement. Sometimes buckling phenomenon evenly occurs. Literature show that all those issues make difficult an effective computation of ''pull-in'' and ''pull-out'' voltages or evenly distinguishing the origin of some failures detected in operation. Analysis, numerical methods and experiments are applied to an industrial test case to investigate step by step the RF-microswitch operation. Multiple electro-thermomechanical coupling is first modeled to have a preliminary and comprehensive description of the microswitch behavior and of its reliability. ''Pull-in'' and ''pull-out'' tests are then performed to validate the proposed models and to find suitable criteria to design the RF-MEMS.

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Section: Residual Stress and Mechanical Couplingmentioning

confidence: 94%

Section: Methodologiesmentioning

confidence: 99%

Section: Residual Stress and Mechanical Couplingmentioning

confidence: 98%

Section: Heating Of Electromechanically Uncoupled Microsystemmentioning

confidence: 99%

See 2 more Smart Citations

Role of the electro-thermo-mechanical multiple coupling on the operation of RF-microswitch

Brusa

Munteanu

2012

Microsyst Technol

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“…The stresses in thin films are divided into two types: extrinsic, such as stresses arising from a mismatch in thermal expansion coefficients, and intrinsic, such as stresses arising from aspects of nucleation and growth of thin film deposition (Margesin et al 2003;Withers and Bhadeshia 2001).…”

Section: Introductionmentioning

confidence: 99%

Effect of residual stress on RF MEMS switch

et al. 2011

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Studies have been carried out on a RF MEMS shunt switch to analyze the effect of residual stress on its electromechanical characteristics. This paper presents the simulated results as well as theoretically calculated results of a shunt switch due to the presence of residual stress gradient in respect of resonant frequency, pull down voltage and switching characteristics. The effect of introduction of holes in the beam is also studied. The calculated results, corresponding to the switch (without holes) at zero residual stress, of resonant frequency, pull-down voltage and switch on and off time are 28.14 kHz, 28.2 V, 16.35 lsec and 8.6 lsec respectively. Modal analysis of the both the structures (with and without holes) are carried out for different values of residual stress gradients. Modal analysis predicted that higher values of tensile stress gradient are not favorable for switching action. The pull-down voltages and switch on and off times are simulated at different stress gradients. With the increase in compressive stress gradient, the pull-down voltage is found to increase, whereas, switch on and off times is decreased. Corresponding to -20 MPa/lm residual stress gradient, the resonant frequency, pull-down voltage and switch on and off times are found to be 74.5 kHz, 63.5 V, 7.5 lsec and 3.36 lsec respectively. Introduction holes in the structure modified these values to 63.77 kHz, 53.1 V, 8.7 lsec, 3.92 lsec respectively.

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Formation and Shape Changing of Conductive Helical Ribbons via Deposition of Highly Stressed Films on Mechanically Responsive Substrates

Chaudhary,

Prakash,

Jacobson

et al. 2023

Adv Funct Materials

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This work demonstrates that the electrodeposition of highly stressed films on compliant ribbons is a robust process to obtain helical structures with excellent mechanical stability and potentially high thermal and electrical conductance. Electrodeposition on end‐tethered ribbons alters their axial and bending stiffness while imparting mechanical stress to drive the formation of a helix with a microscale diameter and pitch in a controlled and scalable manner. The process generates helices with diameters and pitches between 80 and 200 µm and lengths as large as several millimeters. The approach is amenable to parallel processing a large number of 3D structures on any substrate, including large‐area semiconductor wafers. This phenomenon is explained in terms of the change of stress gradients as material is added. Applications of the fabricatd helices include antennas, metamaterials, and slow‐wave structures in frequency ranges not previously attainable.

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Stress characterization of electroplated gold layers for low temperature surface micromachining

Cited by 44 publications

References 5 publications

Role of the electro-thermo-mechanical multiple coupling on the operation of RF-microswitch

Role of the electro-thermo-mechanical multiple coupling on the operation of RF-microswitch

Effect of residual stress on RF MEMS switch

Formation and Shape Changing of Conductive Helical Ribbons via Deposition of Highly Stressed Films on Mechanically Responsive Substrates

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