Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source

Gablech, Imrich; Caha, Ondřej; Svatoš, Vojtěch; Pekárek, J; Neužil, Pavel; Šikola, Tomáš

doi:10.1016/j.tsf.2017.07.039

Cited by 5 publications

(2 citation statements)

References 18 publications

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“…Micromachines 2020, 11, 143 5 of 10 (001). These peaks positions also perfectly fit residual stress-free values determined from lattice parameters we published earlier [18,20]. Such prepared (001) oriented AlN exhibits a high value of piezoelectric coefficient d33 of (7.33 ± 0.08) pC•N −1 along c-axis.…”

Section: Finite Element Simulationsupporting

confidence: 85%

“…The wafers were loaded into the IBAD instrument and the system was evacuated to a base pressure of ≈9 × 10 −7 Pa. Wafers were then pre-cleaned using a secondary ion-beam source with Ar plasma with 30 V beam voltage (BV), for a duration of 300 s. We then deposited ≈80 nm of Ti, serving as a seed layer for consequent AlN (001) deposition, as well as an electrical connection between the AlN and Si substrate. We activated the primary Kaufman ion-beam source, using a BV of 200 V, resulting in a (001) oriented layer of Ti [18,19]. This was followed with a change in the BV to 400 V and the addition of N 2 to the primary ion-beam source, with a ratio of 1:1 to Ar.…”

Section: Chip Design and Fabricationmentioning

confidence: 99%

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Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

et al. 2020

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In this work, we demonstrate the simple fabrication process of AlN-based piezoelectric energy harvesters (PEH), which are made of cantilevers consisting of a multilayer ion beam-assisted deposition. The preferentially (001) orientated AlN thin films possess exceptionally high piezoelectric coefficients d33 of (7.33 ± 0.08) pC∙N−1. The fabrication of PEH was completed using just three lithography steps, conventional silicon substrate with full control of the cantilever thickness, in addition to the thickness of the proof mass. As the AlN deposition was conducted at a temperature of ≈330 °C, the process can be implemented into standard complementary metal oxide semiconductor (CMOS) technology, as well as the CMOS wafer post-processing. The PEH cantilever deflection and efficiency were characterized using both laser interferometry, and a vibration shaker, respectively. This technology could become a core feature for future CMOS-based energy harvesters.

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Section: Finite Element Simulationsupporting

confidence: 85%

Section: Chip Design and Fabricationmentioning

confidence: 99%

Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

et al. 2020

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High‐Conductivity Stoichiometric Titanium Nitride for Bioelectronics

Gablech

Migliaccio

Brodský

et al. 2023

Adv Elect Materials

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Bioelectronic devices such as neural stimulation and recording devices require stable low‐impedance electrode interfaces. Various forms of nitridated titanium are used in biointerface applications due to robustness and biological inertness. In this work, stoichiometric TiN thin films are fabricated using a dual Kaufman ion‐beam source setup, without the necessity of substrate heating. These layers are remarkable compared to established forms of TiN due to high degree of crystallinity and excellent electrical conductivity. How this fabrication method can be extended to produce structured AlN, to yield robust AlN/TiN bilayer micropyramids, is described. These electrodes compare favorably to commercial TiN microelectrodes in the performance metrics important for bioelectronics interfaces: higher conductivity (by an order of magnitude), lower electrochemical impedance, and higher capacitive charge injection with lower faradaicity. These results demonstrate that the Kaufman ion‐beam sputtering method can produce competitive nitride ceramics for bioelectronics applications at low deposition temperatures.

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Influence of substrates and e-beam evaporation parameters on the microstructure of nanocrystalline and epitaxially grown Ti thin films

Devulapalli

Bishara

Ghidelli

et al. 2021

Applied Surface Science

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Titanium thin films were deposited on silicon nitride (SiN x ) coated Si, NaCl, and sapphire substrates varying the deposition conditions using e-beam evaporation to investigate thin film growth modes. The microstructure and texture evolution in dependence of substrate, deposition rate, film thickness, and substrate temperature were studied using X-ray diffraction, electron backscatter diffraction, and transmission electron microscopy. Thin films obtained on SiN x and NaCl substrates were nanocrystalline, while the films deposited on sapphire transformed from nanocrystalline to single crystalline at deposition temperatures above 200 • C. Predominantly, a surface plane orientation of ( 0002) was observed for the single crystalline films due to the minimization of surface energy. The orientation relationship of epitaxial single crystalline films grown on C-plane sapphire substrate is found to be (0002)T i (0006) S apphire , 1120 T i 0330 S apphire . In this orientation relationship, both the total surface and strain energy of the film are minimized. The results were complemented by resistivity measurements using the four-point probe method reporting an increase from ∼60 µ Ω cm to ∼95 µ Ω cm for single crystalline and nanocrystalline films, respectively. 32Apart from the deposition parameters, the lattice matching, 33 symmetry of surface planes, substrate miscut, and the planes 34 forming terraces and steps on the substrate surface [15] are vari-35 ables that can alter the orientation and morphology of thin films, 36 while maintaining substrate chemistry. The adaption of an ori-37 entation relationship (OR) between a substrate and a film is a 38 complex phenomenon [16]. Even with a known substrate sur-39 face symmetry and chemical composition, it is in most cases not 40 possible to predict the preferred OR [17]. Although the (0002) 41 plane of Ti has the lowest surface energy, making it the domi-42 nant surface plane, Ti films have been reported to grow with at 43 least six other surface plane orientations [18].

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Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source

Cited by 5 publications

References 18 publications

Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

High‐Conductivity Stoichiometric Titanium Nitride for Bioelectronics

Influence of substrates and e-beam evaporation parameters on the microstructure of nanocrystalline and epitaxially grown Ti thin films

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