Stress Induced Degradation in Sputtered ZrO2 Thin Films on Silicon for Nano-MOSFET’s

Rao, Ashwath; Dsa, Joyline; Goyal, Saurabh; Singh, Bhawna

doi:10.1007/978-3-319-03002-9_139

Cited by 4 publications

(4 citation statements)

References 10 publications

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“…The switching from oxidizing to reducing ambient, namely nitrogen ambient, has succeeded in inhibiting the formation of SiO 2 interfacial layer as the nitrogen species diffusing to the interface could limit further oxidation at the interface by oxygen species 17,32 . A similar effect was also reported for ZrO 2 passivation layer subjected to annealing in nitrogen ambient, wherein passivating the Si dangling bonds by nitrogen species has restrained the formation of interfacial layer 33‐35 . In addition, a strong Si‐N bonding as well as relaxation of strained bonds between the CeO 2 passivation layer and Si surface could be realized through the utilization of nitrogen ambient that led to a reduction in interface trap density 36 .…”

Section: Introductionmentioning

confidence: 72%

“…17,32 A similar effect was also reported for ZrO 2 passivation layer subjected to annealing in nitrogen ambient, wherein passivating the Si dangling bonds by nitrogen species has restrained the formation of interfacial layer. [33][34][35] In addition, a strong Si-N bonding as well as relaxation of strained bonds between the CeO 2 passivation layer and Si surface could be realized through the utilization of nitrogen ambient that led to a reduction in interface trap density. 36 Similar findings have been revealed for HfO 2 37 as well as stacking CeO 2 /La 2 O 3 38 passivation layer subjected to nitridation, wherein an enhancement in carrier mobility as well as stable threshold voltage were established for the fabricated devices.…”

Section: Introductionmentioning

confidence: 99%

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Effects of post‐deposition annealing of cerium oxide passivation layer in nitrogen‐oxygen‐nitrogen ambient

Shekkeer

Cheong

Quah

2022

Intl J of Energy Research

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Summary Effects of post‐deposition annealing temperature (400°C, 600°C, 800°C and 1000°C) onto metal‐organic decomposed cerium oxide (CeO2) precursor spin‐coated on n‐type Si substrate was carried out in nitrogen‐oxygen‐nitrogen ambient. The capability of nitrogen to inhibit further oxidation of the Si surface by attaching to the oxygen vacancies sites was reported. Excessive formation of SiO2 interfacial layer however occurred at 1000°C, surpassing the thickness of the CeO2 passivation layer, leaving behind nitrogen dangling bonds that were inefficient in restricting further oxidation of the Si surface, and hence a permanent dielectric breakdown happened at an electric field of 0.98 MV/cm. The CeO2 passivation layer annealed at 800°C broke down at 4.85 MV/cm and possessed relatively low Dit, Qeff, and slow trap density with negligible formation of interfacial layer, which promoted its use as a promising high k passivation layer.

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Section: Introductionmentioning

confidence: 72%

Section: Introductionmentioning

confidence: 99%

Effects of post‐deposition annealing of cerium oxide passivation layer in nitrogen‐oxygen‐nitrogen ambient

Shekkeer

Cheong

Quah

2022

Intl J of Energy Research

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“…Thin films are layer of material supported on other material, known as substrate. The property of thin film is determined by stoichiometric proportion, lattice mismatch [ 163 , 164 , 165 , 166 ], nature of growth [ 167 ] and stress developed film substrate [ 168 ]. Thus, numerous methods have been developed to grow thin films of MgO by researchers, which are discussed in recent work from our group and summarized as below.…”

Section: Thin Filmsmentioning

confidence: 99%

Approaches to synthesize MgO nanostructures for diverse applications

Singh

Sharma

et al. 2020

Heliyon

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Magnesium oxide remained interesting from long time for several important phenomena like; defect induced magnetism, spin electron reflectivity, broad laser emission etc. Moreover, nanostructures of this material exhibited suitability for different kinds of applications ranging from wastewater treatment to spintronics depending upon their shape and size. In this way, researchers had grown nanostructures in the form of nanoparticles, thin films, nanotubes, nanowalls, nanobelts. Though nanoparticles and thin films are well known form of nanostructures and wide variety of synthesis approaches are available, however, limited methodology for other nanostructures are available. In order to grow these nanostructures in an optimized way an understanding of these methods is essential. Thus, this review article depicts an overview of various approaches for design of different kinds of nanostructures.

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“…Deposition methods play important role in determining the properties of thin films. The properties of thin films are determined by stoichiometric proportion, lattice mismatch (Hu et al, 2010;Gazquez et al, 2013;Loureiro et al, 2014), nature of growth (Wu et al, 2014), stress developed at film substrate interface (Rao et al, 2014). Hence, number of methods are developed to deposit thin films to get control over these parameters.…”

Section: Introductionmentioning

confidence: 99%

Annealing Effects on MgO Films Grown using e-beam Evaporation

Singh¹,

Gupta²

2019

Int J Math, Eng, Manag Sci

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Present work investigates the annealing effects on MgO thin films deposited using e-beam evaporation method. MgO thin films of thickness 5 and 50 nm were evaporated from MgO-pellet in ultra-high vacuum (2×10-8 Torr). As deposited thin films exhibit coordination similar to MgO bulk as envisaged from near edge X-ray absorption fine structure measurements. As deposited films were annealed at 300, 400 and 500oC in open environment. Thickness of films remain unaltered with annealing within experimental error. Raman spectroscopic measurements further confirm the presence of bands associated with Mg-O bonding at such low thicknesses.

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Stress Induced Degradation in Sputtered ZrO2 Thin Films on Silicon for Nano-MOSFET’s

Cited by 4 publications

References 10 publications

Effects of post‐deposition annealing of cerium oxide passivation layer in nitrogen‐oxygen‐nitrogen ambient

Effects of post‐deposition annealing of cerium oxide passivation layer in nitrogen‐oxygen‐nitrogen ambient

Approaches to synthesize MgO nanostructures for diverse applications

Annealing Effects on MgO Films Grown using e-beam Evaporation

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