2013
DOI: 10.1063/1.4813606
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Stress-induced growth of single-crystalline lead telluride nanowires and their thermoelectric transport properties

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Cited by 19 publications
(11 citation statements)
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“…We previously synthesized PbTe NWs from a PbTe thin film (TF) on a SiO 2 /Si substrate using a stress-induced method [ 42 , 43 ] based on a mechanism in which mismatched thermal expansion between a substrate and deposited film drove the mass flow along grain boundaries at thermal annealing temperatures. This innovative NW-growth method (which does not involve conventional templates, catalysts, or starting materials) enables us to control growth conditions for growing different diameters, shapes, and aspect ratios of single-crystalline NWs [ 44 , 45 ], thus enabling exploration of any possible novel TE property of Bi 2 Se 3 NWs.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…We previously synthesized PbTe NWs from a PbTe thin film (TF) on a SiO 2 /Si substrate using a stress-induced method [ 42 , 43 ] based on a mechanism in which mismatched thermal expansion between a substrate and deposited film drove the mass flow along grain boundaries at thermal annealing temperatures. This innovative NW-growth method (which does not involve conventional templates, catalysts, or starting materials) enables us to control growth conditions for growing different diameters, shapes, and aspect ratios of single-crystalline NWs [ 44 , 45 ], thus enabling exploration of any possible novel TE property of Bi 2 Se 3 NWs.…”
Section: Methodsmentioning
confidence: 99%
“…The films were sealed in a vacuumed quartz tube at less than 5 × 10 −6 torr for annealing at 450 °C for 5 d, followed by cooling the furnace to room temperature. During the annealing process, Bi 2 Se 3 NWs grew from the film via the different thermal expansion coefficients of the Bi 2 Se 3 film (19 × 10 −6 /°C) [ 46 ] and the SiO 2 /Si substrate (0.5 × 10 −6 /°C)/(2.4 × 10 −6 /°C) [ 42 , 43 , 44 , 45 ].…”
Section: Methodsmentioning
confidence: 99%
“…Till now there have been various reports on the ZT enhancement in one-dimensional materials. Dedi et al (2013) reported PbTe nanowire with diameter of 217 nm synthesized by stress induced method exhibited a maximal thermopower of −342 μ VK −1 at 375 K, which is two times larger than that of its bulk counterpart due to increase in the DOS of electrons near the Fermi level in the nanowires. The thermopower and power factor of the nanowires are shown in Figure 1.…”
Section: Research Progress On Nanostructured Te Materialsmentioning
confidence: 99%
“…Various methods including chemical deposition (Lokhande, 1991 ; Tai et al, 2008 ), stress-induced method (Dedi et al, 2013 ), electrodeposition (Xiao et al, 2006 , 2007a ; Jung et al, 2011 ; Yang et al, 2011 ), galvanic displacement reaction (Chang et al, 2014 ), CVD (Fardy et al, 2007 ) have been used to fabricate PbTe nanostructures. The thermoelectric properties of these nanostructures are normally characterized in the form of nanowire arrays or highly-packed nanowire films (pellets).…”
Section: Introductionmentioning
confidence: 99%
“…The thermoelectric properties of these nanostructures are normally characterized in the form of nanowire arrays or highly-packed nanowire films (pellets). This is due to the difficulties in maintaining the single nanowire's structural and chemical composition during the lithographic contacting (Tai et al, 2008 ; Yang et al, 2011 ; Dedi et al, 2013 ). For example, p-type PbTe nanowires were fabricated using hydrothermal method.…”
Section: Introductionmentioning
confidence: 99%