Stress-induced leakage currents of the RF sputtered Ta2O5 on N-implanted silicon

Novkovski, N.; Atanassova, E.; Paskaleva, A.

doi:10.1016/j.apsusc.2006.09.041

Cited by 9 publications

(1 citation statement)

References 34 publications

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“…Many annealing techniques, such as the use of dry oxygen, ultraviolet-generated ozone and plasma, and two-step process of rapid thermal annealing for crystallization of tantalum oxide films, have been used [5,6]. Different thin film deposition methods such as pulsed laser deposition, chemical vapor deposition, ion beam evaporation, and DC/RF sputtering [7][8][9][10][11][12] were employed for the preparation of tantalum oxide films. In this investigation, an attempt is made in the preparation of tantalum oxide films on quartz and silicon substrates held at room temperature (303 K) by DC magnetron sputtering technique.…”

Section: Introductionmentioning

confidence: 99%

Effect of Postdeposition Annealing on the Structural, Electrical, and Optical Properties of DC Magnetron SputteredTa2O5Films

Chandra

Reddy

Rao

et al. 2007

Research Letters in Materials Science

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Thin films of tantalum oxide were formed on quartz and silicon (111) substrates kept at room temperature (303 K) by reactive sputtering of tantalum target in the presence of mixture of oxygen and argon gases. The as-deposited films were annealed in air for an hour in the temperature range 673–873 K. The films were characterized by studying structural, dielectric, electrical, and optical properties. The as-deposited films were amorphous in nature. As the annealing temperature increased to 673 K, the films were transformed into polycrystalline. Electrical characteristics of as-deposited and annealedTa2O5thin films were compared. The thermal annealing reduced the leakage current density and increased the dielectric constant. The optical transmittance of the films increased with the increase of annealing temperature. The as-deposited films showed the optical band gap of 4.38 eV. It increased to 4.44 eV with the increase of annealing temperature to 873 K. The as-deposited films showed the low value (1.89) of refractive index and it increased to 2.15 when annealed at 873 K. The increase of refractive index with annealing temperature was due to the increase in the packing density and crystallinity of the films.

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