2001
DOI: 10.1016/s0168-9002(01)01018-x
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Stress reduction of Mo/Si multilayer structures

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Cited by 18 publications
(8 citation statements)
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“…However, by deposition of a Mo/Si multilayer structure on substrate, the former may develop mechanical stresses which can largely deform the original mirror. Therefore, one way of perfecting multilayer optics for EUV-lithography is to study mechanical stresses in multilayer Mo/Si-structures and develop methods for stresses compensation while maintaining maximum re°ectivity of Mo/Si-mirrors [27,28].…”
Section: Mirrors For Euv-lithographymentioning
confidence: 99%
“…However, by deposition of a Mo/Si multilayer structure on substrate, the former may develop mechanical stresses which can largely deform the original mirror. Therefore, one way of perfecting multilayer optics for EUV-lithography is to study mechanical stresses in multilayer Mo/Si-structures and develop methods for stresses compensation while maintaining maximum re°ectivity of Mo/Si-mirrors [27,28].…”
Section: Mirrors For Euv-lithographymentioning
confidence: 99%
“…In order to preserve the quality of the shape of the surfaces and, as a consequence, the spatial resolution of the device, the technology of compensation of internal stresses in films was applied. The technique of compensation of internal stresses in structures based on a pair of Mo and Si materials is described in detail in [14]. The reflective characteristics of the lens mirrors obtained on the [15] reflectometer are shown in Fig.…”
Section: X-ray Optical Elementsmentioning
confidence: 99%
“…For the amorphous multilayer with W = 0.30, the interface stress can be dominant, while the thicker Si layer grown on W seems to contribute to the larger compressive stress as compared to the sample with 22 and Mo/Si multilayer systems. 6 At a large thickness ratio of W = 0.67, the obvious polycrystallization of the W layers in the -and the -phases may increase the compressive stress, which gradually exceeds the interface effects, resulting in a relatively large stress state.…”
Section: W/si Multilayers With Different Thickness Ratiosmentioning
confidence: 99%
“…For instance, the stress of Mo/Si multilayers depended on the thickness ratio, and the stress value approached zero when Mo (ratio of the thickness of Mo to the multilayer period) = 0.6. 6 In the case of Mo/B 4 C multilayers, the interface roughness increased with an increase in the number of the bilayer period. 7 Similar studies have also been carried out using W/Si multilayers.…”
Section: Introductionmentioning
confidence: 96%