Striation in Ge single crystals grown from melt under vibrations and weak heat convection

Стрелов, В. И.; Sidorov, V. S.; Захаров, Б. Г.

doi:10.1134/1.1387139

Cited by 6 publications

(8 citation statements)

References 1 publication

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“…Nonstationary thermogravity convection during crystal growth is known to give rise to growth rate oscillations and leads to formation of concentration microinhomogeneities in crystals [5]. In this work, in order to decrease the intensity of natural convection, the growth was produced by the vertical Bridgman method using a predominantly axisymmetric upper heat supply to the crystal [3]. Optimization of the heater unit of the growth facility and decrease of radial temperature gradients in the melt down to a level of ∂T/∂r∼(1-1.5) °C/cm allowed us to change convective flows in the melt into laminar streams which did not give rise to the formation of dopant growth striations in the reference crystals (Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Ge(Ga) crystals with a diameter d∼23 mm and a length l∼40 mm were grown by the vertical Bridgman method in the <111> direction with an axisymmetric supply of heat from the top under conditions of reduced natural convection [3]. Growth was implemented in the axial temperature field moving at a constant rate (with no travelling of the crystal and heater), which eliminated uncontrolled vibrations caused by operation of travel mechanisms.…”

Section: Methodsmentioning

confidence: 99%

“…Spreading resistance measurements with an accuracy of ∆R/R∼2% did not reveal the macroinhomogeneity of dopant distribution in cross sections of crystals grown in an inclined position. [3] have shown that axial vibrations of amplitude-frequency range under study do not give rise to the formation of dopant growth striations and to any anomalies in the grown crystals structure. Thus the most attention in the work is drawn to the study of the effect of torsional vibrations around the axis of a growing crystal on real crystal structure.…”

Section: Impact Of Variation Of Growth Facility Orientationmentioning

confidence: 97%

“…On the topograph the dopant growth striations in the seed are seen which are not effectively revealed by single crystal topographical methods. The main reason for this is the small value of coefficient of lattice deformation β [7] when Ge is doped by Ga (β∼7.61×10 -25 cm 3 ), due to the close proximity of Ge and Ga covalent radii (r Ge =1.22 Å, r Ga =1.26 Å [8]). In the present case the image contrast of the primary crystallization front under the exposure conditions employed corresponds to the larger spacing of the crystal lattice in the seed.…”

Section: Impact Of Variation Of Growth Facility Orientationmentioning

confidence: 99%

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Structural features of Ge(Ga) single crystals grown under conditions simulating the microgravity perturbation factors

Прохоров¹,

Shul’pina

Стрелов³

et al. 2005

phys. stat. sol. (c)

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Peculiarities of the real structure of Ge(Ga) single crystals grown under external mechanical perturbations of the crystallization process simulating actual microgravity environment aboard spacecrafts were investigated by X-ray topography and diffractometry methods, etching analysis and spreading resistance measurements. The applied perturbations included vibrations and variations of growth facility orientation with respect to the direction of gravity force. It has been shown that microinhomogeneity of the crystals grown is defined not only by formation of dopant growth striations at peculiar vibrational perturbations of a melt, but also by specific features of dislocation structure of crystals related with the formation of small angle boundaries, slip bands and other inhomogeneities in dislocation distribution.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Impact Of Variation Of Growth Facility Orientationmentioning

confidence: 97%

Section: Impact Of Variation Of Growth Facility Orientationmentioning

confidence: 99%

See 2 more Smart Citations

Structural features of Ge(Ga) single crystals grown under conditions simulating the microgravity perturbation factors

Прохоров¹,

Shul’pina

Стрелов³

et al. 2005

phys. stat. sol. (c)

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“…Temperature fluctuations ΔТ near the crystal-melt interface during the growth of germanium by the Czo chralski method were measured in [13,14] to be ΔТ = 1-2 K.…”

Section: Analysis Of Surface Irregularitiesmentioning

confidence: 99%

Surface micromorphology of germanium single-crystal boules grown from melt

Kaplunov

Kolesnikov

Иванова

et al. 2015

J. Synch. Investig.

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The morphology of the growth surface of germanium single crystals grown by directed crystalliza tion and the Czochralski method is studied by interference profilometry, optical microscopy, and scanning electron microscopy (SEM). Stable periodic profile distributions on different time scales (~3 and ~0.3 s) indicating changes in the crystallization kinetics are revealed on the upper surface of disks grown by directed crystallization and the lateral cylindrical surface of Czochralski pulled boules. Based on known data on temper ature fluctuations at the crystal-melt interface and the parameters of the crystal's surface profile and growth rates measured in this study, the kinetic coefficients are estimated to be β K = (2 × 10 -6 -7 × 10 -7 ) m s -1 K -1 . The two dimensional pattern of irregularity distribution on the surfaces indicates the stepwise growth of the {111} singular faces according to the layer by layer mechanism. A correlation between profile irregularities and periodicity in the distribution of dislocation etch pits over the radius and lateral crystal surface is revealed on juvenile crystal surfaces.

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Control of Convective Processes in a Melt for Growth of Doped Semiconductor Crystals with High Homogeneity of Properties

Стрелов

Korobeynikova

Folomeev

2010

Crystal Growth & Design

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Investigations of conditions for crystallization providing desirable modes of heat and mass transfer during terrestrial and space experiments have been carried out. They are necessary for semiconductor crystal growth with high homogeneity of properties using Ge doped with Ga. Mathematical simulation and experimental investigations of the influence of the intensity of convective flows on micro-and macrohomogeneity of crystals grown by the method of vertical directed crystallization have been carried out. It has been shown that, to achieve high homogeneity of crystal properties at growth under both terrestrial and space conditions, minimization of a radial temperature gradient and elimination of a free melt surface (Marangoni convection) are necessary.

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Striation in Ge single crystals grown from melt under vibrations and weak heat convection

Cited by 6 publications

References 1 publication

Structural features of Ge(Ga) single crystals grown under conditions simulating the microgravity perturbation factors

Structural features of Ge(Ga) single crystals grown under conditions simulating the microgravity perturbation factors

Surface micromorphology of germanium single-crystal boules grown from melt

Control of Convective Processes in a Melt for Growth of Doped Semiconductor Crystals with High Homogeneity of Properties

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