Strong blue light emission from an oxygen-containing Si fine structure

Morisaki, Hiroshi; Hashimoto, Hideki; Ping, F. W.; Nozawa, H.; Ono, Hiroshi

doi:10.1063/1.354609

Cited by 69 publications

(15 citation statements)

References 9 publications

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“…In the first material group Morisaki et al found a 2.64-eV peak (E ex = 3.35 eV) for Si-rich deposited oxides [42]. When studying nanocrystalline Si Zhao et al obtained PL peaks at 2.67, 2.84 and 2.98 eV under 3.68 or 3.82 eV excitation.…”

Section: Luminescence Of Ion-implanted Sio 2 Layersmentioning

confidence: 98%

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

Rebohle

Borany

Fröb³

et al. 2000

Appl Phys B

177

119

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The microstructural, optical and electrical properties of Si-, Ge-and Sn-implanted silicon dioxide layers were investigated. It was found, that these layers exhibit strong photoluminescence (PL) around 2.7 eV (Si) and between 3 and 3.2 eV (Ge, Sn) at room temperature (RT), which is accompanied by an UV emission around 4.3 eV. This PL is compared with that of Ar-implanted silicon dioxide and that of Si-and Ge-rich oxide made by rf magnetron sputtering. Based on PL and PL excitation (PLE) spectra we tentatively interpret the blue-violet PL as due to a T 1 → S 0 transition of the neutral oxygen vacancy typical for Si-rich SiO 2 and similar Ge-or Sn-related defects in Ge-and Sn-implanted silicon dioxide. The differences between Si, Ge and Sn will be explained by means of the heavy atom effect. For Geimplanted silicon dioxide layers a strong electroluminescence (EL) well visible with the naked eye and with a power efficiency up to 5 × 10 −4 was achieved. The EL spectrum correlates very well with the PL one. Whereas the EL intensity shows a linear dependence on the injection current over three orders of magnitude, the shape of the EL spectrum remains unchanged. The I − V dependence exhibiting the typical behavior of Fowler-Nordheim tunneling shows an increase of the breakdown voltage and the tunnel current in comparison to the unimplanted material. Finally, the suitability of Ge-implanted silicon dioxide layers for optoelectronic applications is briefly discussed. 78.60.F; 78.55; 61.72.T; 85.30.T; 78.66.J Since the early 60s Si has been the dominating material of microelectronics because of its excellent mechanical, chemical and electrical properties. However, with increasing miniaturization one approaches more and more the physical limits drawn by the material properties of Si. The increase of the line resistance and the corresponding parasitic capacitors with decreasing feature size is opposed to a further miniaturization and an enhancement of the clock rate. The PACS:

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Section: Luminescence Of Ion-implanted Sio 2 Layersmentioning

confidence: 98%

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

Rebohle

Borany

Fröb³

et al. 2000

Appl Phys B

177

119

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“…3,4 Because the blue color is also crucial to the Si-based full-color display, some other methods are attempted to achieve blue emission. [5][6][7][8][9] SiO 2 films are extensively used in silicon devices and integrated circuits as passivation layers and electrical insulation layers. Their optical properties have been investigated.…”

mentioning

confidence: 99%

Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline silicon

Liao

Bao

Zheng

et al. 1996

Applied Physics Letters

236

105

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From fabrication to mode mapping in silicon nitride microdisks with embedded colloidal quantum dots Appl. Phys. Lett. 101, 161101 (2012) Vanadium bound exciton luminescence in 6H-SiC Appl. Phys. Lett. 101, 151903 (2012) Broadband near-infrared emission from bismuth-doped multilayer films J. Appl. Phys. 112, 073511 (2012) Enhancement of carbon nanotube photoluminescence by photonic crystal nanocavities

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“…Other alternative methods have been proposed to produce silicon nanocrystals: plasma deposition from silane, 9 gas evaporation, 10 and termination of glass-melt reaction. 11 These techniques have been demonstrated capable of producing visible-light emission at room temperature, but still none of them seems appropriate for the production of integrated devices.…”

mentioning

confidence: 99%

Room-temperature visible luminescence from silicon nanocrystals in silicon implanted SiO2 layers

Mutti

Ghislotti

Bertoni

et al. 1995

Applied Physics Letters

289

105

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We report the observation of visible-light emission at room temperature from high fluence (0.3–3×1017 cm−2) Si+ implanted thermal SiO2 layers grown on silicon substrates. Significant blue-light emission and an intense broad luminescent band with a peak beyond 750 nm are observed after annealing at high temperature (T≥1000 °C). The red-light emission, present only in the highest fluence implant, is attributed to the luminescence emitted from silicon nanocrystals produced by silicon precipitation. The presence of silicon nanocrystals is confirmed by transmission electron microscopy. Significant blue-light emission is visible after thermal annealing in the 1×1017 cm−2 fluence implant. The peak position shifts from 490 to 540 nm by increasing the annealing cycles temperature.

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Strong blue light emission from an oxygen-containing Si fine structure

Cited by 69 publications

References 9 publications

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline silicon

Room-temperature visible luminescence from silicon nanocrystals in silicon implanted SiO2 layers

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