Strongly polarized quantum well infrared photodetector with metallic cavity for narrowband wavelength selective detection

Nie, Xiaojing; Zhen, Honglou; Huang, Gaoshan; Yin, Yizhe; Li, Shilong; Chen, Pingping; Zhou, Xueqing; Mei, Yongfeng; Lü, Wei

doi:10.1063/5.0002012

Cited by 20 publications

(6 citation statements)

References 38 publications

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“…With the increase of width, the absorption spectrum under p-polarized light gradually broadens and absorption at the longer wavelength range is significantly enhanced. Similar to free standing nanowires [39], the larger width can accommodate more modes at the longer wavelength range and thus enhance the absorption [40]. In comparison, the thickness (T) is much small than the infrared band that we research (2-3 µm).…”

Section: Resultsmentioning

confidence: 81%

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Design of InAs nanosheet arrays for high-performance polarization-sensitive infrared photodetection

He¹,

Huang²,

Li³

et al. 2022

J. Phys. D: Appl. Phys.

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Polarization-sensitive infrared photodetectors are widely needed to distinguish an object from its surrounding environment. Polarization-sensitive detection can be realized by using semiconductors with anisotropic geometry or anisotropic crystal arrangement, such as semiconductor nanowires and two-dimensional materials. However, these photodetectors show drawbacks in low light absorption, weak polarization sensitivity and stability issues. Here, we designed two-dimensional InAs nanosheet based arrays that are highly suitable for polarization-sensitive infrared photodetection. By using the COMSOL modelling, we optimized the geometry of single free-standing InAs nanosheets, obtaining dichroic ratio up to 127 (average) in the wavelength range of 2-3 μm by reducing the thickness and increasing the height. Extending this to a nanosheet array with an optimized geometry, an enhancement of the absorption intensity from 45% (for a single nanosheet) to over 67% with a dichroic ratio exceeding 50 in the wavelength range of 2-3 μm can be achieved. Moreover, these unique light absorption properties are tolerant to incident angles up to 30°. The design of such nanosheet array provides a new route for the development of high-performance infrared photodetectors for polarization photodetection.

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Section: Resultsmentioning

confidence: 81%

“…Interestingly, the absorption intensity even increases at the angle of 60 • . The equation (2) [22,40] can help us explain the phenomenon that the array absorption peak is redshifted by oblique incidence.…”

Section: Resultsmentioning

confidence: 99%

Design of InAs nanosheet arrays for high-performance polarization-sensitive infrared photodetection

He¹,

Huang²,

Li³

et al. 2022

J. Phys. D: Appl. Phys.

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show abstract

“…(1) Engineering photoactive materials and detector structures for independent control over λon and λoff, such as dye blending, 6 charge collection narrowing, 7 , 8 carrier trapping, 9 self-trapped state, 10 depletion region engineering, 11 and gate transmittance tuning 12 . (2) Combining broadband PDs with narrowband filters, such as resonant cavities (RCs), 13 , 14 nanodisk arrays, 15 photonic crystals, 16 metamaterials, 17 nanowires, 18 epsilon-near-zero effect, 19 , 20 and surface plasmon resonance (SPR) 21 – 23 In some cases, the components for photodetection and spectral filtering are actually merged into a single device structure 23 .…”

Section: Introductionmentioning

confidence: 99%

In situ photoelectric biosensing based on ultranarrowband near-infrared plasmonic hot electron photodetection

Nan,

Lai,

Peng

et al. 2024

Adv. Photon.

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Narrowband photodetection is an important measurement technique for material analysis and sensing, for example, nondispersive infrared sensing technique. Both photoactive material engineering and nanophotonic filtering schemes have been explored to realize wavelength-selective photodetection, while most devices have a responsive bandwidth larger than 2% of the operating wavelength, limiting sensing performance. Near-infrared photodetection with a bandwidth of less than 0.2% of the operating wavelength was demonstrated experimentally in Au/Si Schottky nanojunctions. A minimum linewidth of photoelectric response down to 2.6 nm was obtained at a wavelength of 1550 nm by carefully tailing the absorptive and radiative loss in the nanostructures. Multiple functions were achieved on chip with the corrugated Au film, including narrowband resonance, light harvesting for sensing and photodetection, and electrodes for hot electron emission. Benefiting from such a unity integration with in situ photoelectric conversion of the optical sensing signal and the ultranarrowband resonance, self-contained on-chip biosensing via simple intensity interrogation was demonstrated with a limit of detection down to 0.0047% in concentration for glucose solution and 150 ng∕mL for rabbit IgG. Promising potential of this technique is expected for the applications in on-site sensing, spectroscopy, spectral imaging, etc.

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“…However, these types of microcavities were constructed by two re ective silver mirrors and the enhanced resonant NIR absorption is still limited by the photoactive donor and acceptor blend lm. [28][29][30] In contrast, based-on well-developed wet-etching technique, the optical microcavity could be directly fabricated on the silicon and other substrates, [31][32][33] sensitive inorganic low-dimensional photodetectors have been demonstrated through improved light management and harvesting with SiO 2 nanograting array or a Fabry-Pérot microcavity.…”

Section: Introductionmentioning

confidence: 99%

Filterless narrowband near-infrared Si photodetector

Wei

Sun

et al. 2022

Preprint

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Spectrally selective narrowband Si photodetection is critical for near-infrared (NIR) medical imaging, optical communication, light detection and autonomous mobiles. For conventional inorganic semiconductors such as silicon with broadband absorption from visible until 1.1 µm, it remains challenging to achieve narrowband photodetection without integrating optical filters. We demonstrate the very first narrowest NIR silicon photodetectors without any bandpass filter, reaching the full-width-at-half-maximum of only 26 nm at 912 nm. The narrowband response is inherently attributed to the resonant enhancement effect of optical microcavities formed by patterned Si nanograting combined with the organic D18:Y6 blend film. The Conductive-Atomic Force Microscope (C-AFM), Kelvin Probe Force Microscope (KPFM) and transient absorption (TA) spectroscopy characterization indicate effective charge transfer between Si and organic layers, significantly contributing to ultrafast photoresponse of 74 \(\mu s\). Therefore, this design concept opens up the new possibility of developing filter-less and effective low-cost NIR detection, enabling entirely new configurations of optical imaging devices with narrowband tunability for telecommunications and imaging applications.

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Strongly polarized quantum well infrared photodetector with metallic cavity for narrowband wavelength selective detection

Cited by 20 publications

References 38 publications

Design of InAs nanosheet arrays for high-performance polarization-sensitive infrared photodetection

Design of InAs nanosheet arrays for high-performance polarization-sensitive infrared photodetection

In situ photoelectric biosensing based on ultranarrowband near-infrared plasmonic hot electron photodetection

Filterless narrowband near-infrared Si photodetector

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