Strucrural Properties of GaSb Layers Grown on InAs, AlSb, and GaSb Buffer Layers on GaAs (001) Substrates

Noh, Young-Kyun; Hwang, Yu-Ting; Kim, Moon‐Deock; Kwon, Y. J.; Oh, Jae Eung; Kim, Y. H.; Lee, J. Y.

doi:10.3938/jkps.50.1929

Cited by 16 publications

(6 citation statements)

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“…4 This also contradicts the conclusion made by other groups as AlSb forms a wetting layer or plays a surfactant role. 4,15,20,21,25 This is because if the AlSb buffer had formed a wetting layer on all over the Si substrate, the GaSb epilayers would have grown as a 2D film among AlSb islands because of lower interfacial energy. Nucleation of GaSb on the side-walls of the AlSb islands on the Si surface proceeds until GaSb growth fronts from each side coalesce above the AlSb islands, completely encapsulating them.…”

Section: -7mentioning

confidence: 99%

“…9,12,18 The significant improvement in quality of various group III-Sb based compounds grown on Si or GaAs substrates using AlSb buffer layer have been reported. [19][20][21][22][23][24][25][26] Despite the common usage of AlSb as a buffer layer for growing group III-Sb based compounds, it is not thoroughly understood how the AlSb buffer layer influences the growth of GaSb epilayers. AFM and RHEED, two prevalent characterization tools for investigating the epitaxy process, are not well suited to explain the interfacial phenomena.…”

Section: Introductionmentioning

confidence: 99%

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Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

Vajargah

Ghanad-Tavakoli

Preston

et al. 2013

Journal of Applied Physics

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The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates. V C 2013 AIP Publishing LLC. [http://dx.

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Section: -7mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

Vajargah

Ghanad-Tavakoli

Preston

et al. 2013

Journal of Applied Physics

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“…Recently, a growth method for GaSb layers on Si (1 0 0) substrates involving the introduction of an AlSb initiation layer has been demonstrated by several research groups [10][11][12][13]. However, the effects of the quantum dots (QDs) buffer layer on the crystalline quality of the heteroepitaxial film have not been deeply understood in a microstructural point of view.…”

Section: Introductionmentioning

confidence: 98%

Growth of low defect AlGaSb films on Si (100) using AlSb and InSb quantum dots intermediate layers

Noh

Kim

et al. 2011

Journal of Crystal Growth

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“…Noh et al reported that high quality GaSb films could be realized on a GaAs (001) substrate at low temperature, and the strain relief and structural properties of the GaSb films with different buffer layers were investigated [6]. Their results show that the insertion of an AlSb or GaSb buffer layer is very useful for improving the quality of the GaSb grown on GaAs substrates [6]. Liquid phase epitaxy (LPE) was the earliest method used in the extended growth of GaSb-based materials, and there are numerous reports on the growth of GaSb by LPE techniques.…”

Section: Epitaxy Of Gasb Materialsmentioning

confidence: 99%

“…Groups III-V semiconductors are the most promising candidate infrared materials for use in lasers and detectors, owing to their high absorption coefficients, high carrier mobilities and widely tunable band gaps [1,4]. Among these materials, gallium antimonide (GaSb)-based alloys and compounds offer a wide range of electronic band gaps, band gap offsets and electronic barriers along with extremely high electron mobility; these materials would thus enable a variety of devices that are much faster than the equivalent InP-and GaAs-based devices and infrared light sources, and would facilitate lower power consumption [5,6]. Therefore, GaSb materials in the forms of epitaxial layers, multi-element alloys, quantum wells, superlattices and low-dimensional nanostructures have been attracting considerable attention.…”

Section: Introductionmentioning

confidence: 99%

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

et al. 2017

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Groups III-V semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications. Gallium antimonide (GaSb) and GaSb-related semiconductors, which exhibit high carrier mobility and a narrow band gap (0.725 eV at 300 K), have been recognized as suitable candidates for high-performance optoelectronics in the mid-infrared range. However, the performances of the resulting devices are strongly dependent on the structural and emission properties of the materials. Enhancement of the crystal quality, adjustment of the alloy components, and improvement of the emission properties have therefore become the focus of research efforts toward GaSb semiconductors. Molecular beam epitaxy (MBE) is suitable for the large-scale production of GaSb, especially for high crystal quality and beneficial optical properties. We review the recent progress in the epitaxy of GaSb materials, including films and nanostructures composed of GaSb-related alloys and compounds. The emission properties of these materials and their relationships to the alloy components and material structures are also discussed. Specific examples are included to provide insight on the common general physical and optical properties and parameters involved in the synergistic epitaxy processes. In addition, the further directions for the epitaxy of GaSb materials are forecasted.

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Strucrural Properties of GaSb Layers Grown on InAs, AlSb, and GaSb Buffer Layers on GaAs (001) Substrates

Cited by 16 publications

References 0 publications

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

Growth of low defect AlGaSb films on Si (100) using AlSb and InSb quantum dots intermediate layers

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

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