Structural and electrical characteristics of RF-sputtered HfO2 high-k based MOS capacitors

Tirmali, Pravin M.; Khairnar, Anil G.; Joshi, Bhavana; Mahajan, Ashok M.

doi:10.1016/j.sse.2011.04.009

Cited by 81 publications

(27 citation statements)

References 14 publications

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“…Considering the Al work function (4.28 eV) and the Ge electron affinity (χ=4.13 eV), the band offset C E  of HfTiO ralative to Ge conduction band is 1.95 eV [39] . The F-N tunneling process is illustrated schematically in Fig.…”

Section: Leakage Current-conduction Mechanism Analysismentioning

confidence: 99%

Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

Gao

Xiao

et al. 2017

Journal of Materials Science & Technology

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Section: Leakage Current-conduction Mechanism Analysismentioning

confidence: 99%

Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

Gao

Xiao

et al. 2017

Journal of Materials Science & Technology

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“…The total of the oxide charges in the oxide layer is defined as the effective oxide charge (Q f,eff ). The Q f,eff in the HfO 2 films can be calculated by using following equation [3]:…”

Section: Pda Effects On Electrical Characteristics Of Mos Capacitorsmentioning

confidence: 99%

“…As the size of gate insulator thickness have showed a continuously scale down, the traditional SiO 2 have reached to its physical and electrical limits. It has been reported that the SiO 2 film thickness less than 1.2 nm lead to serious leakage current due to the direct tunneling of electrons [3][4][5][6]. During recent years, the studies on the investigation of the electrical properties of the high-k dielectric materials as gate insulator such as ZrO 2 [7], Al 2 O 3 [8], HfO 2 [9,10] have been extensively increased with the aim of designing the high performance.…”

Section: Introductionmentioning

confidence: 99%

Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors

Kahraman

Yılmaz

Kaya³

et al. 2015

J Mater Sci: Mater Electron

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The purposes of this paper are to investigate the post deposition annealing (PDA) effect on structural and electrical characterizations of HfO 2 MOS capacitor and the frequency dependency of series resistance and interface states in this device. PDA processes on the HfO 2 films deposited using RF magnetron sputtering system were performed in N 2 ambient at 350, 550, 650, and 750°C. The phase identifications and crystallization degrees of the HfO 2 films were determined by using X-ray diffractometry. The grain size of the films was varied from 4.5 to 15.23 with increasing in PDA temperature. The HfO 2 MOS capacitors were fabricated using the as-deposited and annealed films for electrical characterization. C-V and G/ x-V measurements were performed at 1 MHz frequency. The C-V characteristics of the MOS capacitor fabricated with film annealed at 550°C show a better behaviour in terms of the high dielectric constant and low effective oxide charge compared to others. For this device, C-V and G/x-V measurements were performed in different frequencies ranging from 10 kHz to 1 MHz at room temperature. Obtained results show that series resistance and interface states strongly influence the C-V and G/x-V behaviour of the MOS capacitor.

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“…Therefore, a systematic study on the surface and interface properties HfO 2 films with different growth parameters is utmost important prior to its applications in solid state devices. Various methods such as Pulsed Laser Deposition [8], Chemical Vapor Deposition [9][10][11], e-beam evaporation [12] and radio frequency (RF) magnetron sputtering [13][14][15][16] are adopted to deposit the HfO 2 film on the silicon substrate. Among them, RF magnetron sputtering technique has several advantages such as low thermal budget, ease of handling, less consumption of source materials, nontoxic nature and possibility of multi-target processing.…”

Section: Introductionmentioning

confidence: 99%

Surface and interface studies of RF sputtered HfO2 thin films with working pressure and gas flow ratio

Das

Ghosh

Tripathy

et al. 2015

J Mater Sci: Mater Electron

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In this work, hafnium oxide (HfO 2 ) thin films were deposited on p-type silicon substrate by radio frequency magnetron sputtering at various working pressure ranging from 4 9 10 -3 to 1 9 10 -2 mbar and Ar/O 2 flow ratio from 1:4 to 4:1. The morphological and electrical properties of the sputtered films were investigated and a correlation between the surface and electrical properties of the HfO 2 films was established with the variation of sputtering parameters. The evolution of monoclinic structure of the hafnium oxide thin films was observed by XRD studies. The surface of the HfO 2 films became rough with the increase in grain size at the sputter pressure of 8 9 10 -3 mbar and Ar/O 2 gas flow ratio of 1:4. The formation of HfO 2 bond was seen from FTIR spectra. The oxide charge density has a lower value for the sputter pressure of 8 9 10 -3 mbar and Ar/O 2 gas flow ratio of 1:4 due to the evolution of larger grains. The interface charge density was found to be minimum at a sputter pressure of 8 9 10 -3 mbar.

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Structural and electrical characteristics of RF-sputtered HfO2 high-k based MOS capacitors

Cited by 81 publications

References 14 publications

Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors

Surface and interface studies of RF sputtered HfO2 thin films with working pressure and gas flow ratio

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