Structural and electrical characterization of AgInS2 thin films grown by single-source thermal evaporation method

Chemically deposited In2S3–Ag2S layers to obtain AgInS2 thin films by thermal annealing

“…Several methods such as thermal evaporation [7], spray pyrolysis [8], co-evaporation [9], and chemical bath deposition (CBD) [10] have been used to obtain AgInS 2 thin films, but CBD has proved to be the most attractive, easy to apply, less expensive and suitable for large area deposition. Moreover, in comparison with thermal evaporation and co-evaporation methods CBD does not require high vacuum systems.…”

Effect of annealing for Ag-In-S thin films prepared by a vacuum evaporation method

“…In addition, the AgInS2 material has an advantage that the lattice parameter at 5.82 Å of AgInS2 crystal is close to that at 5.75 Å of CIGS crystal. Some preparation methods of the AgInS2 thin films, chemical spray pyrolysis [3][4][5], evaporation [6,7], hot-wall epitaxy [8] and chemical bath deposition [9], have carried out up to now. In these methods prepared of AgInS2 thin films, the evaporation method could be prepared with high quality and low cost.…”

“…In our previous paper [7,10], we investigated the characterization of AgInS2 thin films prepared by a singlesource thermal evaporation method. The AgInS2 thin films were successful grown by annealing above 400 ˚C in air.…”

Effect of H2S Annealing on Ag-Rich Ag–In–S Thin Films Prepared by Vacuum Evaporation

“…A, is almost the same as that of CIGS crystals. AgInS 2 thin films have been prepared by methods such as chemical spray pyrolysis, [4][5][6] evaporation, 7,8) hot-wall epitaxy, 9) and chemical bath deposition. 10) The I/III ratios of the CIGS absorber layer drastically affect the electrical and optical properties of CIGS thin films and the performance of CIGS solar cells.…”