Structural and electrical properties of nitrogen and aluminum codoped p-type ZnO films

Preparation and characteristics study of ZnO: (Al, Cu, I) thin films by chemical spray pyrolysis

“…It is obvious that a significant reduction in I(002)/I(101) ratio was observed after doping, the highest value was noticed for ZnO:I film, however all films have diffracted peaks intensity ratio higher than that for ASTM data and these results are agree well with recently reported data particularly for high doping concentration [18]. The low electrical resistivity in TCO's(transparent conductive oxide) films is due to high electron concentration comes from the P-type n-type n-type impurities doping and from non-stoichiometry [18]. Where Al belong to third group elements doped ZnO, Al +3 atoms will substitute Zn +2 and act as donors [19].…”

Codoped (AlN) and monodoped (Al) ZnO thin films grown by RF sputtering: A comparative study

“…[1][2][3][4]. Among all the transparent conductive oxides, ZnO is a promising material for the fabrication of ultraviolet LEDs [5,6], detectors [7] and transparent conducting electrodes [8][9][10]. In order to fabricate such optoelectronic devices, we need to accumulate good quality of p-type and n-type conduction in ZnO.…”

Comparison of N-doped ZnO and N–Al codoped ZnO thin films deposited by pulsed filtered cathodic vacuum arc deposition

“…Similar behavior for ptype ZnO film is reported earlier [37,47]. Table 5 46.55 1.610 9 10 1 3.332 9 10 11 7.494 9 10 2 6.21 9 10 -2 p N-Al codoped ZnO 0.54 1.205 9 10 19 18 2.730 9 10 -2 1.205 9 10 14 5.178 9 10 -1 3.663 9 10 1 p some results of N-doped ZnO film by comparing with the published data [48][49][50][51] and Table 6 shows comparative results of this study with the published data for N-Al codoped ZnO [13][14][15][16][17]. The resistivity value of this study is found to be close to the reported resistivity value [17].…”

“…(Al, N)-codoping increase the hole concentration of p-type film to 10 18 cm -3 despite a decrease in Hall mobility. Zhang et al [17] have shown that to resolve the problem of p-type doping in ZnO, nitrogen and aluminum (N-Al) codoped ZnO films are prepared by ultrasonic spray pyrolysis (USP) technique. N-Al codoped ZnO films under optimum conditions are revealed to show p-type conduction, with a low resistivity of 1.7 9 10 -2 X cm, carrier concentration of 5.09 9 10 18 cm -3 and high Hall mobility of 73.6 cm 2 V -1 s -1 .…”