Structural and magnetic properties of epitaxial Fe3Si/GaAs heterostructures

Hsu, You-Ren; Lee, Y.J.; Chang, Yu-Teng; Huang, M. L.; Chiu, Y. N.; Ho, Chun-Yu; Chang, P.; Hsu, Chun‐Hua; Hong, M.; Kwo, J.

doi:10.1016/j.jcrysgro.2006.11.142

Cited by 13 publications

(18 citation statements)

References 9 publications

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“…The lattice constants of Fe 3 Si nearly matched with those of GaAs, based on the high-resolution X-ray diffraction analysis. [3]. The transport properties of the resistivity and the magnetoresistance were measured by a standard four-probe technique in the cryostat with a superconducting magnet up to 9 T. Moreover, the longitudinal MOKE measurements were conducted ex-situ to characterize the in-plane magnetic anisotropy.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…The structural, transport, and magnetic properties of the Fe 3 Si/GaAs heterostructures have been studied [1][2][3][4][5][6][7]. Fe 3 Si is a ferromagnetic material that could be a promising candidate for injections of spin-polarized electrons from a ferromagnet into a semiconductor [8]. For Fe 3 Si epitaxial films grown on GaAs (001) by MBE, the magneto-transport properties have been studied mostly by applying current along the magnetic hard axis, i.e., the [1 1 0] crystallographic axis, which is the easy cleavage direction for the (1 0 0) GaAs substrate [4,6].…”

Section: Introductionmentioning

confidence: 99%

“…Fe 3 Si is a ferromagnetic material that could be a promising candidate for injections of spin-polarized electrons from a ferromagnet into a semiconductor [8]. For Fe 3 Si epitaxial films grown on GaAs (001) by MBE, the magneto-transport properties have been studied mostly by applying current along the magnetic hard axis, i.e., the [1 1 0] crystallographic axis, which is the easy cleavage direction for the (1 0 0) GaAs substrate [4,6]. Anisotropic magnetoresistance (AMR) of Fe 3 Si showed the following unconventional behavior-the resistivity in a field perpendicular to the current was larger than that for resistivity in a field parallel to the current.…”

Section: Introductionmentioning

confidence: 99%

“…For Fe 3 Si epitaxial films grown on GaAs (001) by MBE, the magneto-transport properties have been studied mostly by applying current along the magnetic hard axis, i.e., the [1 1 0] crystallographic axis, which is the easy cleavage direction for the (1 0 0) GaAs substrate [4,6]. Anisotropic magnetoresistance (AMR) of Fe 3 Si showed the following unconventional behavior-the resistivity in a field perpendicular to the current was larger than that for resistivity in a field parallel to the current. In single crystals, the direction of both the current and the magnetization with respect to the crystal axes are known to affect the behavior of MR. [9] In our present work, magneto-transport studies of epitaxial Fe 3 Si films showed a strong anisotropic dependence of magnetoresistance (MR) in the film plane, and the behavior was highly dependent on the direction of the current with respect to the crystallographic axes.…”

Section: Introductionmentioning

confidence: 99%

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Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial film

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial film

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Huang

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Hybrid spintronic materials: Growth, structure and properties

Liu

Wong

2019

Progress in Materials Science

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Spintronics is an emergent interdisciplinary topic for the studies of spin-based, other than or in addition to charge-only-based physical phenomena. Since the discovery of giant magnetoresistance (GMR) effect in metallic multilayers, the first-generation spintronics has generated huge impact to the mass data storage industries. The second-generation spintronics, on the other hand, focuses on the integration of the magnetic and semiconductor materials and so to add new capabilities to the electronic devices. While spin phenomena have long been investigated within the context of conventional ferromagnetic materials, the study of spin generation, relaxation, and spin-orbit coupling in non-magnetic materials took off only recently with the advent of hybrid spintronics and it is here many novel materials and architectures can find their greatest potentials in both science and technology. This article reviews recent progress of the research on a selection of hybrid spintronic systems including those based on ferromagnetic metal (FM) and alloys, half-metallic materials, and twodimensional (2D) materials. FM and alloys have spontaneous magnetization and usually high Curie temperature (Tc), half-metallic materials possess high spin polarization near the Fermi level (EF), and the 2D materials have unique band structures such as the Fermi Dirac cone and valley degree of freedom of the charge carriers. Enormous progress has been achieved in terms of synthesising the epitaxial hybrid spintronic materials and revealing their new structures and properties emerging from the atomic dimensions and the hetero-interfaces. Apart from the group-IV, III-V, and II-VI semiconductors and their nanostructures, spin injection and detection with 2D materials such as graphene, transition-metal dichalcogenides (TMDs) and topological insulators (TIs) has become a new trend and a particularly interesting topic due to either the long spin lifetime or strong spin-orbit coupling induced spinmomentum locking, which potentially leads to dissipationless electronic transport.

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Transport and magnetic properties of Fe3Si epitaxial films

Vinzelberg¹,

Schumann²,

Elefant³

et al. 2008

Journal of Applied Physics

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The paper presents resistivity and magnetization measurements on nearly stoichiometric Fe3Si films epitaxially grown on GaAs substrates by electron-beam evaporation in an ultrahigh vacuum chamber. In the low-temperature resistivity a T3 term was found in all samples. A term like that is known to describe the anomalous single-magnon scattering processes in half-metallic materials and confirms so for our samples the hypothesis of half-metallic ferromagnetism in Fe3Si. The films show an anisotropic magnetoresistance in low magnetic fields. In high magnetic fields a negative longitudinal and transverse magnetoresistance (MR) has been observed linearly depending on the field strength. In the vicinity of 200 K the MR shows maximum absolute values up to 1.5% at magnetic fields of about 8 T. From the magnetization measurements a magnetic moment of 0.86μB/atom was obtained, which is close to that of bulk Fe3Si.

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Structural and magnetic properties of epitaxial Fe3Si/GaAs heterostructures

Cited by 13 publications

References 9 publications

Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial film

Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial film

Hybrid spintronic materials: Growth, structure and properties

Transport and magnetic properties of Fe3Si epitaxial films

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