Structural and optical investigations on CdS thin films grown by chemical bath technique

Konakanchi, Ramaiah; Pilkington, R.D.; Hill, Arthur E.; Tomlinson, R. D.; Bhatnagar, Anil K.

doi:10.1016/s0254-0584(00)00281-9

Cited by 176 publications

(54 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Two phases, cubic and hexagonal, have been reported in the literature on chemical bath deposition of CdS. 18,[21][22][23] The diffraction pattern of our sample reveals a strong CdS peak at 26.7 and a very small peak at 48…”

Section: Texture Of the Cds Filmmentioning

confidence: 50%

“…The same (002) orientation is found for films grown on uncoated glass substrates, and has also been observed by other authors. [21][22][23] For hexagonal CdS, a (002) orientation implies that the closest-packed lattice planes are exposed to the reaction mixture during growth. We attribute this to an atom-by-atom growth mechanism, as reported previously by Ortega-Borges et al for chemical bath-deposited CdS.…”

Section: Texture Of the Cds Filmmentioning

confidence: 99%

“…21 For ntype CdS with an (ionized) donor density of 1. . This corresponds to approximately 0.01% of the total number of sulfur ions, indicating that these chemical bath-deposited films are highly stoichometric.…”

Section: A Cmentioning

confidence: 99%

See 2 more Smart Citations

Titanium nitride: A new Ohmic contact material for n-type CdS

Didden¹,

Battjes²,

Machunze³

et al. 2011

Journal of Applied Physics

View full text Add to dashboard Cite

In devices based on CdS, indium is often used to make Ohmic contacts. Since indium is scarce and expensive, suitable replacement materials need to be found. In this work, we show that sputtered titanium nitride forms an Ohmic contact with n-type CdS. The CdS films, deposited with chemical bath deposition, have a hexagonal crystal structure and are polycrystalline, mostly with a (002) texture. The thickness of the films is $600 nm, and the donor density is 1.9 Â 10 16 cm À3. The donor density increases to 1.5 Â 10 17 cm À3 upon annealing. The contact resistivity of sputtered TiN on CdS is found to be 4.7 6 0.6 X cm 2 . This value is sufficiently small to avoid large resistive losses in most CdS device applications. To demonstrate the use of TiN in a CdS device, a Au/CdS/ TiN Schottky diode was constructed. The diode has a potential barrier of 0.69 V and an ideality factor of 2.2.

show abstract

Section: Texture Of the Cds Filmmentioning

confidence: 50%

Section: Texture Of the Cds Filmmentioning

confidence: 99%

See 1 more Smart Citation

Titanium nitride: A new Ohmic contact material for n-type CdS

Didden¹,

Battjes²,

Machunze³

et al. 2011

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The E g of the window layer is around 3.3 eV, and a lattice mismatch or inconsistency is usually observed between the window layer and absorber layer, that is, the CIGS layer [9]. Also, the CdS thin film of which E g is approximately 2.4 eV acts as a bandgap buffer [10,11].…”

Section: Introductionmentioning

confidence: 99%

A Study on the Band Structure of ZnO/CdS Heterojunction for CIGS Solar-Cell Application

Sim¹,

Lee²,

Cho³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

View full text Add to dashboard Cite

Abstract-In this paper, ZnO films were prepared by atomic layer deposition (ALD) and CdS films were deposited using chemical bath deposition (CBD) to form ZnO/CdS heterojunction. More accurate mapping of band arrangement of the ZnO/CdS heterojunction has been performed by analyzing its electrical and optical characteristics in depth by various methods including transmittance, x-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS). The optical bandgap energies (E g ) of ZnO and CdS were 3.27 eV and 2.34 eV, respectively. UPS was capable of extracting the ionization potential energies (IPEs) of the materials, which turned out to be 8.69 eV and 7.30 eV, respectively. The electron affinity (EA) values of ZnO and CdS calculated from IPE and E g were 5.42 eV and 4.96 eV, respectively. Energy-band structures of the heterojunction could be accurately drawn from these parameters taking the conduction band offset (CBO) into account, which will substantially help acquisition of the full band structures of the thin films in the CIGS solar-cell device and contribute to the optimal device designs.

show abstract

“…One of the big advantages of CBD method is that film can be made over a large area (mm 2 ). But quality of films depends on many factors like substrate, orientation and agitation, thickness, 18 temperature, 21 optical absorption, crystalline structure, Cd and S defects, 22 solution pH, 23 annealing 24 etc. It is difficult to maintain all these parameters when large scale production or industry level technological applications are considered.…”

Section: Introductionmentioning

confidence: 99%

Channel length specific broadspectral photosensitivity of robust chemically grown CdS photodetector

et al. 2015

View full text Add to dashboard Cite

CdS grown by chemical bath deposition (CBD) technique is very simple, robust, economical method and has potential large scale applications in solar cells, photovoltaic, photodetectors, sensors and optoelectronic devices. Here we report channel lengths (CLs) specific broadspectral photoresponse properties of commonly grown robust CdS films by CBD. The broadspectral dependent current flow has been observed in all CLs and the rise and decay times have been measured in milliseconds for visible wavelengths (400-700nm). The rise time curves showed linear dependency when measured for CLs 300, 500 and 700nm and non-linearity was observed for CLs 7μm, 45μm and 350μm. We have noticed that decrease in channel lengths down to nanometers (300 nm) increases the response time. Three steps decay time has been noticed for all CLs. The shorter channels (nm) showed two trends in decay time, small increase for wavelengths <550nm and significant increase for wavelengths >550nm. Finally, CLs specific broadspectral photosensitivity has been investigated which indicates the device geometry and fabrication method play an important role for defining the CdS based photodetectors or simulating the characteristics of a photodetector.

show abstract

Structural and optical investigations on CdS thin films grown by chemical bath technique

Cited by 176 publications

References 29 publications

Titanium nitride: A new Ohmic contact material for n-type CdS

Titanium nitride: A new Ohmic contact material for n-type CdS

A Study on the Band Structure of ZnO/CdS Heterojunction for CIGS Solar-Cell Application

Channel length specific broadspectral photosensitivity of robust chemically grown CdS photodetector

Contact Info

Product

Resources

About