Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition

Lower temperature growth of single phase MgZnO films in all Mg content range

“…Similar results have been reported for the MgZnO films obtained by sputtering growth technique [10,11]. Pulsed laser deposition (PLD) is an effective growth method for fabricating such metastable phase films due to the relative high kinetic energies that the ablated species have [12][13][14]. Using this method, Ohtomo et al have succeeded in growing single phase wurtzite MgZnO films with Mg content up to 0.33 [15].…”

Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy

“…These films are characterized by the formation of in-plane rotational domains that reflect the substrate symmetry. For example, ð2 0 1Þ oriented β-Ga 2 O 3 layers on sapphire (0 0 0 1) consist of six in-plane rotational domains with six-fold symmetry in accordance with the substrate symmetry [11][12][13][14]17]. Similarly, (1 0 0) and ð1 0 2Þ oriented β-Ga 2 O 3 layers are obtained on MgO (1 0 0) and…”

“…So far, several epitaxial growth techniques of β-Ga 2 O 3 , such as molecular beam epitaxy (MBE) [11][12][13], metalorganic vapor phase epitaxy (MOPVE) [14,15], and pulsed laser deposition (PLD) [16,17], have been reported. Among them, MBE is mainly used for the study of β-Ga 2 O 3 power devices [5][6][7][8].…”

“…Growth of β-Ga 2 O 3 on foreign substrates has been reported on sapphire [11][12][13][14]16,17], MgO [11,15], etc. These β-Ga 2 O 3 thin-films are highly textured, exhibiting single out-of-plane orientations.…”

Effect of growth pressure on the characteristics of β-Ga2O3 films grown on GaAs (100) substrates by MOCVD method

“…The anisotropy of the ␤-Ga 2 O 3 , including electrical and optical properties has already been investigated by Binet and Gourier [9] and Ueda et al [10]. At present, the ␤-Ga 2 O 3 films could be prepared by many methods, such as molecular beam epitaxy (MBE) [11], pulsed laser deposition [12], plasma enhanced atomic layer deposition (PEALD) [13], electron beam evaporation [14], radio frequency magnetron sputtering [15], spray pyrolysis technique [16], sol-gel method [17], metal organic chemical vapor deposition (MOCVD) [18] and metal organic vapor phase epitaxy (MOVPE) [1]. In our experiment, the MOCVD method is chosen for its flexibility, controllability, scalability into larger commercial systems, and applicability to current device technology [19,20].…”