“…The characteristic bands of PO 4 3- groups were observed in both the LaPO 4 /CS scaffolds and LaPO 4 nanoparticles. The P-O antisymmetric stretching vibration ( v 3 ) band was located at 993 and 954 cm −1 , and the antisymmetric deformation vibration ( v 4 ) band was located at 615 cm −1 [ 35 , 36 ]. Fig.…”
BackgroundFabrication of porous scaffolds with great biocompatibility and osteoinductivity to promote bone defect healing has attracted extensive attention.MethodsIn a previous study, novel lanthanum phosphate (LaPO4)/chitosan (CS) scaffolds were prepared by distributing 40- to 60-nm LaPO4 nanoparticles throughout plate-like CS films.ResultsInterconnected three dimensional (3D) macropores within the scaffolds increased the scaffold osteoconductivity, thereby promoting cell adhesion and bone tissue in-growth. The LaPO4/CS scaffolds showed no obvious toxicity and accelerated bone generation in a rat cranial defect model. Notably, the element La in the scaffolds was found to promote osteogenic differentiation of bone marrow mesenchymal stem cells (BMSCs) through the Wnt/β-catenin signalling pathway and induced high expression of the osteogenesis-related genes alkaline phosphatase, osteocalcin and Collagen I (Col-I). Moreover, the LaPO4/CS scaffolds enhanced bone regeneration and collagen fibre deposition in rat critical-sized calvarial defect sites.ConclusionThe novel LaPO4/CS scaffolds provide an admirable and promising platform for the repair of bone defects.Electronic supplementary materialThe online version of this article (10.1186/s12951-018-0411-9) contains supplementary material, which is available to authorized users.
“…The characteristic bands of PO 4 3- groups were observed in both the LaPO 4 /CS scaffolds and LaPO 4 nanoparticles. The P-O antisymmetric stretching vibration ( v 3 ) band was located at 993 and 954 cm −1 , and the antisymmetric deformation vibration ( v 4 ) band was located at 615 cm −1 [ 35 , 36 ]. Fig.…”
BackgroundFabrication of porous scaffolds with great biocompatibility and osteoinductivity to promote bone defect healing has attracted extensive attention.MethodsIn a previous study, novel lanthanum phosphate (LaPO4)/chitosan (CS) scaffolds were prepared by distributing 40- to 60-nm LaPO4 nanoparticles throughout plate-like CS films.ResultsInterconnected three dimensional (3D) macropores within the scaffolds increased the scaffold osteoconductivity, thereby promoting cell adhesion and bone tissue in-growth. The LaPO4/CS scaffolds showed no obvious toxicity and accelerated bone generation in a rat cranial defect model. Notably, the element La in the scaffolds was found to promote osteogenic differentiation of bone marrow mesenchymal stem cells (BMSCs) through the Wnt/β-catenin signalling pathway and induced high expression of the osteogenesis-related genes alkaline phosphatase, osteocalcin and Collagen I (Col-I). Moreover, the LaPO4/CS scaffolds enhanced bone regeneration and collagen fibre deposition in rat critical-sized calvarial defect sites.ConclusionThe novel LaPO4/CS scaffolds provide an admirable and promising platform for the repair of bone defects.Electronic supplementary materialThe online version of this article (10.1186/s12951-018-0411-9) contains supplementary material, which is available to authorized users.
“…The bands that were obtained accorded well with the literature. [27,28]. Phosphate group conformation analysis may improve the electrical characteristics of MIS SBDs.…”
The Cu/Sn-LaPO4/n-Si MIS Schottky barrier diode (SBD) with a 10% Sn doping has been successfully fabricated, and their photodiode properties were investigated. The I-V forward and reverse bias curves determine the photodiode parameters such as barrier height, ideality factor, and saturation currents from the thermionic emission theory. The results of the experiments with 10% Sn-LaPO4 SBDs showed a linear decrease in the ideality factor (n) up to 2.31 and 1.74, respectively, with a small increase in the effective barrier height (𝛟B) of 0.744 and 0.806 eV in dark and light conditions these results signify their use in optoelectronic industries.
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