Structural and optical properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">MgGa</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Se</mml:mi></mml:mrow><mml:mrow><mml:mn>4</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>and<mml:math xmlns:

Kim, Hyung-Gon; Kim, Wha‐Tek; Kim, Yong-Geun

doi:10.1103/physrevb.38.9469

Cited by 11 publications

(5 citation statements)

References 7 publications

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“…It's worth noting that the predicted centrosymmetric phase MGSe‐II with high E hull is also thermodynamic stable, which has been reported by Kim et al. in 1988, [ 30 ] while the NCS MGSe‐I phase with low E hull has not been synthesized. To evaluate the thermodynamic stability, the phonon spectrum of MGSe‐I was investigated.…”

Section: Resultsmentioning

confidence: 77%

“…166) space group with the cell parameters of a = 3.95 Å, c = 38.893 Å, and Z = 3. [ 30 ] In the structure, Mg atoms are coordinated with six Se atoms to build MgSe 6 , and Ga atoms are coordinated with four Se atoms to build GaSe 4 . MGSe‐II shows a ZnIn 2 S 4 ‐type structure constructed by the MgSe 6 and GaSe 4 groups, which is different from the DCL structure in MGSe‐I (DCL‐MgGa 2 Se 4 ).…”

Section: Resultsmentioning

confidence: 99%

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The Combination of Structure Prediction and Experiment for the Exploration of Alkali‐Earth Metal‐Contained Chalcopyrite‐Like IR Nonlinear Optical Material

et al. 2022

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Design and fabrication of new infrared (IR) nonlinear optical (NLO) materials with balanced properties are urgently needed since commercial chalcopyrite-like (CL) NLO crystals are suffering from their intrinsic drawbacks. Herein, the first defect-CL (DCL) alkali-earth metal (AEM) selenide IR NLO material, DCL-MgGa 2 Se 4 , has been rationally designed and fabricated by a structure prediction and experiment combined strategy. The introduction of AEM tetrahedral unit MgSe 4 effectively widens the band gap of DCL compounds. The title compound exhibits a wide band gap of 2.96 eV, resulting in a high laser induced damage threshold (LIDT) of ≈3.0 × AgGaS 2 (AGS). Furthermore, the compound shows a suitable second harmonic generation (SHG) response (≈0.9 × AGS) with a type-I phase-matching (PM) behavior and a wide IR transparent range. The results indicate that DCL-MgGa 2 Se 4 is a promising mid-to-far IR NLO material and give some insights into the design of new CL compound with outstanding IR NLO properties based on the AEM tetrahedra and the structure predication and experiment combined strategy.

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Section: Resultsmentioning

confidence: 77%

Section: Resultsmentioning

confidence: 99%

The Combination of Structure Prediction and Experiment for the Exploration of Alkali‐Earth Metal‐Contained Chalcopyrite‐Like IR Nonlinear Optical Material

et al. 2022

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“…MgGa 2 Se 4 는 II-III 2 -VI 4 족 화합물 반도체로서 상온에서 에너지 띠간격이 2.20 eV인 직접천이형 반도체로서 photo-voltaic optical detectors [1], solar cells [2], light emitting diodes (devices) [3], solar energetic, optoelectronics, parametric oscillators [4], various semiconductor devices [5] [2], Iodine Vapour Transport [4], Liquid Encapsulated Czochralski (LEC)법 [5], 진공 증착법 [6], E-Beam 증착법 [7], Hot Wall Epitaxy (HWE) [8]…”

Section: 서 론unclassified

Effect of Thermal Annealing for MgGa₂Se₄Single Crystal Thin Film Grown by Hot Wall Epitaxy

Bang¹,

Kim²,

Park³

et al. 2014

Journal of Sensor Science and Technology

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The evaporating materials for MgGa 2 Se 4 single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, MgGa 2 Se 4 compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were 610 Received: Oct. 31, 2013, Revised: Dec. 31, 2013, Accepted: Jan. 2, 2014 This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License(http://creativecommons.org/ licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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“…, solar cells [2], light emitting diodes(devices) [3], solar energetic, optoelectronics, parametric oscillators [4], various semiconductor devices [5] 등에 응용성이 기대되고 있어 주목되고 있는 물질이 다. 따라서 양질의 MgGa 2 Se 4 단결정을 성장하기 위한 방법과 그의 물성연구가 활발하게 진행되어 오고 있다.…”

Section: Hot Wall Epitaxy(hwe)법에unclassified

“…따라서 양질의 MgGa 2 Se 4 단결정을 성장하기 위한 방법과 그의 물성연구가 활발하게 진행되어 오고 있다. MgGa 2 Se 4 의 성장 방법은 Bridgman-Stockbarger Technique [1], Zone Levelling [2], Iodine Vapour Transport [4], Liquid Encapsulated Czochralski(LEC)법 [5],진공 증착법 [6], E-Beam 증착법 [7], Hot Wall Epitaxy(HWE) [ (1) …”

Section: Hot Wall Epitaxy(hwe)법에unclassified

Photocurrent study on the splitting of the valence band and growth of MgGa₂Se₄ single crystal thin film by hot wall epitaxy

Park¹,

Hong²

2013

Journal of the Korean Crystal Growth and Crystal Technology

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A stoichiometric mixture of evaporating materials for MgGa 2 Se 4 single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, MgGa 2 Se 4 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 610 o C and 400 o C, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the MgGa 2 Se 4 obtained from the absorption spectra was well described by the Varshni's relation, E g (T) = 2.34 eV − (8.81 × 10 −4 eV/K)T 2 /(T + 251 K). The crystal field and the spin-orbit splitting energies for the valence band of the MgGa 2 Se 4 have been estimated to be 190.6 meV and 118.8 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ∆so definitely exists in the Γ 5 states of the valence band of the MgGa 2 Se 4 /GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the A 1 -, B 1 -exciton for n = 1 and C 27 -exciton peaks for n = 27.

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Structural and optical properties ofMgGa2Se4and

Cited by 11 publications

References 7 publications

The Combination of Structure Prediction and Experiment for the Exploration of Alkali‐Earth Metal‐Contained Chalcopyrite‐Like IR Nonlinear Optical Material

The Combination of Structure Prediction and Experiment for the Exploration of Alkali‐Earth Metal‐Contained Chalcopyrite‐Like IR Nonlinear Optical Material

Effect of Thermal Annealing for MgGa₂Se₄Single Crystal Thin Film Grown by Hot Wall Epitaxy

Photocurrent study on the splitting of the valence band and growth of MgGa₂Se₄ single crystal thin film by hot wall epitaxy

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Structural and optical properties ofMgGa2Se4and

Cited by 11 publications

References 7 publications

The Combination of Structure Prediction and Experiment for the Exploration of Alkali‐Earth Metal‐Contained Chalcopyrite‐Like IR Nonlinear Optical Material

The Combination of Structure Prediction and Experiment for the Exploration of Alkali‐Earth Metal‐Contained Chalcopyrite‐Like IR Nonlinear Optical Material

Effect of Thermal Annealing for MgGa2Se4Single Crystal Thin Film Grown by Hot Wall Epitaxy

Photocurrent study on the splitting of the valence band and growth of MgGa2Se4 single crystal thin film by hot wall epitaxy

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Product

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Effect of Thermal Annealing for MgGa₂Se₄Single Crystal Thin Film Grown by Hot Wall Epitaxy

Photocurrent study on the splitting of the valence band and growth of MgGa₂Se₄ single crystal thin film by hot wall epitaxy