Structural and optical properties of (ZnO)x(CdO)1−x thin films obtained by spray pyrolysis

Santana, G.; Morales‐Acevedo, Arturo; Vigil, O.; Vaillant, L.; Cruz, F; Contreras‐Puente, G.

doi:10.1016/s0040-6090(00)01142-1

Cited by 30 publications

(12 citation statements)

References 6 publications

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“…The optical transmission spectra of the ZnO:Cd films annealed at 400 °C are shown in Fig. 6 (b), where a red shift in the transmission threshold and a reduction of the average transmission may be observed [5].…”

Section: International Letters Of Chemistrymentioning

confidence: 99%

“…7b shows that the optical absorption edge shifted to short wavelengths when the ZnO:Cd thin films were annealed at 400 °C. This blue shift could be attributed due to the motion of Fermi level owing to increase in the charge carrier concentration as annealing temperature or attributed to the decrease in shallow-level trap concentration near the conduction band [1,5,32]. The increase in band gap with thermal annealing of the as-grown and annealed ZnO:Cd thin films as a function of concentration is shown in Fig.…”

Section: Volume 15mentioning

confidence: 99%

“…TCOs have high thermal stability and low cost [2][3][4][5]. ZnO, one of the most promising TCOs currently available, has high transparency in the visible region of the electromagnetic spectrum to oxygen vacancies.…”

Section: Introductionmentioning

confidence: 99%

“…ZnO, one of the most promising TCOs currently available, has high transparency in the visible region of the electromagnetic spectrum to oxygen vacancies. It has band gap of approximately 3.2-3.3 eV and does not contain any element that is hazardous to the environment [5,6].…”

Section: Introductionmentioning

confidence: 99%

“…The band gap varies with the doping concentration of the films from about 3.3 eV of ZnO [25][26][27] to about 2.2 eV of CdO [25][26][27]. Incorporation of Cd into ZnO is very useful for the fabrication of ZnO/ZnCdO heterojunction and super lattice structures [1].…”

Section: Introductionmentioning

confidence: 99%

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Effect Cd Doping on the Structural and Optical Properties of ZnO Thin Films

A.Najim

Rozaiq

2013

ILCPA

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ZnO thin films with Cd/Zn nominal ratios of 0 %, 1 %, 3 %, 5 %, and 7 % and thickness of 0.7 µm were prepared by chemical spray pyrolysis. X-ray diffraction patterns showed that the films have polycrystalline structures and peaks matching the hexagonal ZnO structure. Crystallite sizes ranged from about 35 nm to 87 nm. As the doping concentration increased, full width at half maximum values decreased and crystallite sizes increased. The UV-Vis spectra of the ZnO:Cd films showed high transparency in the visible region. The optical band gap of the ZnO:Cd films decreased from 3.255 eV to 3.17 eV with increasing Cd doping concentration. The transition type was direct, thereby allowing transition. The ZnO:Cd thin films were annealed at 400 °C, and annealing treatment showed improvements in the properties of the derived films.

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Section: International Letters Of Chemistrymentioning

confidence: 99%

Section: Volume 15mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect Cd Doping on the Structural and Optical Properties of ZnO Thin Films

A.Najim

Rozaiq

2013

ILCPA

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Structural, electrical and optical properties of Cd1−xZnxO thin films and alloying effects on Kβ/Kα intensity ratios

et al. 2006

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Cd 1−x Zn x O thin films were prepared by spray pyrolysis in air atmosphere on a glass substrate at 250°C. The Zn content in Cd 1−x Zn x O films was varied from x = 0 to 0.60. Structural, electrical and optical properties of Cd 1−x Zn x O films were investigated by x-ray diffraction, electrical resistivity and optical transmittance spectra, respectively. As the Zn content in Cd 1−x Zn x O thin films increased, the preferred orientation of the films did not change, only the peak intensity of the planes decreased. In addition to the peaks of CdO, peaks of ZnO were observed in the film with x = 0.6. The resistivity of Cd 1−x Zn x O thin films increased with increasing Zn content. Transmittance spectra studies of films were carried out in the 190-1100 nm wavelength range and the results showed that the bandgap energy range varied from 2.42 to 3.25 eV. In addition, alloying effect on the Kb/Ka intensity ratio in Cd 1−x Zn x O semiconductor thin films was studied. It was found that the Kb/Ka intensity ratio is changed by alloying effects in Cd 1−x Zn x O semiconductor thin films for different composition of x. The results were compared with the theoretical values.

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