Structural and optical studies on dc reactive magnetron sputtered Cu2O films

Pierson

Uthanna

2011

Cryst. Res. Technol.

Self Cite

Thin films of Ag 2 Cu 2 O 3 were formed on glass substrates by RF magnetron sputtering technique under different oxygen partial pressures in the range 5×10-3 -8×10 -2 Pa using mosaic target of Ag 70 Cu 30 . The influence of oxygen partial pressure on the core level binding energies, crystallographic structure, and electrical and optical properties of the deposited films was studied. The atomic ratio of copper to silver in the films was 0.302. The oxygen content was in correlation with the oxygen partial pressure maintained during the growth of the films. The films formed at oxygen partial pressures <2×10 -2 Pa was mixed phase of Ag 2 Cu 2 O 3 and Ag. The films deposited at 2×10 -2 Pa were single phase of Ag 2 Cu 2 O 3 . The crystallite size of the films formed at 2×10 -2 Pa was 12 nm, while those films annealed at 473 K was 16 nm. The nanocrystalline Ag 2 Cu 2 O 3 films formed at oxygen partial pressure of 2×10 -2 Pa showed electrical resistivity of 8.2 Ωcm and optical band gap of 1.95 eV.

Section: Resultssupporting

confidence: 54%

Growth, electrical and optical behaviour of nanocrystalline Ag₂Cu₂O₃ films produced by RF magnetron sputtering

Pierson

Uthanna

2011

Cryst. Res. Technol.

Self Cite

“…The ratio of deposition rate in pure argon to reactive mode in the presence of oxygen was about 1.6. It is to be mentioned that the deposition rate ratio of about 2.8 was noticed in the DC reactive magnetron sputtered copper oxide films formed at an oxygen partial pressure of 6x10 -2 Pa [21], which indicated less reactive of silver than copper with oxygen. Such a decrease in the deposition rate with the increase of oxygen partial pressure was also reported in the deposition of DC reactive magnetron sputtered silver oxide films [22] formed with silver target.…”

Section: Resultsmentioning

confidence: 93%

The effect of oxygen partial pressure on physical properties of nano‐crystalline silver oxide thin films deposited by RF magnetron sputtering

Sreedhar

et al. 2011

Cryst. Res. Technol.

Self Cite

Nano-crystalline silver oxide films were deposited on glass and silicon substrates held at room temperature by RF magnetron sputtering of silver target under different oxygen partial pressures. The influence of oxygen partial pressure on the structural, morphological, electrical and optical properties of deposited films was investigated. Varying oxygen partial pressure during the sputter deposition leads to changes of mixed phase of Ag 2 O and Ag to a single phase of Ag 2 O and to AgO. The X-ray diffraction and X-ray photoelectron spectroscopy results showed the formation of single phase Ag 2 O with cubic structure at oxygen partial pressures of 2x10 -2 Pa while the films deposited at higher oxygen partial pressure of 9x10 -2 Pa showed the formation of single phase of AgO with monoclinic structure. Raman spectroscopic studies on the single phase Ag 2 O showed the stretching vibration of Ag-O bonds. Single-phase Ag 2 O films obtained at oxygen partial pressure of 2x10 -2 Pa were nano-crystalline with crystallite size of 20 nm and possessed an electrical resistivity of 5.2x10-3 Ωcm and optical band gap of 2.05 eV. The films deposited at higher oxygen partial pressure of 9x10 -2 Pa were of AgO with electrical resistivity of 1.8x10 -2 Ωcm and optical band gap of 2.13 eV.

“…It is well known that the refractive index of SiO 2 is about 1.45. Refractive indices of cuprous oxide thin films [6,17,18,[25][26][27], cupric oxide [17,18,27] and mixtures of them [28] have been reported in the literature. From the rather broad dispersion of reported values, a reasonable n 550 of the cuprous oxide is about 2.6, while a slightly lower value can be assumed for cupric oxide.…”

Section: Chemical State Analysis and Local Bonding Structurementioning

confidence: 99%

Colored semi-transparent Cu-Si oxide thin films prepared by magnetron sputtering

Gil-Rosta

Yubero

Fernández

et al. 2011

Opt. Mater. Express

Colored semi-transparent Cu-Si oxide thin films have been prepared by reactive magnetron sputtering from a single cathode of coppersilicon composition. Thin films of different composition and optical response were obtained by changing process parameters like the relative amount of copper in the target and the O 2 /Ar mixture of the reactive plasma gas. The film characteristics were analyzed by several techniques. Their optical properties (refractive index, absorption coefficient, color) have been correlated with the process parameters used in the film preparation as well as with the film stoichiometry and chemistry.