Structural and Photoelectrical Properties of Sprayed ?-In2S3 Thin Films

Abstract

b-In 2 S 3 thin films have been prepared by the spray pyrolysis technique. X-ray diffraction (XRD) analysis and scanning electron microscopy (SEM) micrographs showed a good homogeneity of these layers. Microanalysis and XPS measurements have detected little oxygen in the films present in In 2 O 3 form. Photoconductivity measurements were carried out within the range of wavelengths in the visible spectrum at different modulation frequencies f and bias voltages V ranging from 5 to 300 Hz and from 3 to 25 V, respectively. The band gap energy E g , deduced from these spectra, has approximately the same value as that obtained from spectrophotometric transmission and reflection measurements (E g 2.05 eV).

Synthesized of Double Layer Thin Film ZnO/ZnO:Ag by Sol-Gel Method for Direct Blue 71 Photodegradation

“…The prepared thin films showed that they have a fine and homogenous surface (Ilican et al, 2007;Bhira et al, 2000;George et al, 1988). It was seen by fringes pattern on UV-Vis transmittance spectra in Figure 3.…”

Structural and Optoelectronic Properties of In-Zn-S sprayed Layers

“…In fact, while standing in the mean absorption zone where αe 1, this photocurrent becomes appreciably proportional to α, in accordance with the approximating relation [10,11]: …”

Characterization of Thermally Evaporated In2S3 Films for Solar Cell Application

“…It shows n-type electrical conductivity and has a wide direct band gap of ∼2.3 eV [3][4][5]. Depending on the growth conditions, In 2 S 3 exists in three different crystallographic forms, namely , , and .…”