Structural and photoluminescence characters of SnO2:Sb films deposited by RF magnetron sputtering

Wang, Yuheng; Ma, Jin; Jin, Feng; Yu, Xuhu; Ma, Hongmei

doi:10.1016/j.jlumin.2004.12.003

Cited by 70 publications

(35 citation statements)

References 21 publications

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“…The inset shows the PL intensity brightness (violet peak) against antimony concentration. With increase in Sb concentration, the intensity of violet peak increases and attains maximum value at 2 at.% Sb concentration due to decrease in number of defects and the non-radiative recombination [37]. The high density of oxygen vacancies interact with interfacial tin leads to the formation of a considerable amount of trapped states within the band gap giving rise to high PL intensity at room temperature.…”

Section: Photoluminescence Studiesmentioning

confidence: 99%

Structural and optoelectronic properties of antimony incorporated tin oxide thin films

Babar

Shinde

Moholkar

et al. 2010

Journal of Alloys and Compounds

125

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Section: Photoluminescence Studiesmentioning

confidence: 99%

Structural and optoelectronic properties of antimony incorporated tin oxide thin films

Babar

Shinde

Moholkar

et al. 2010

Journal of Alloys and Compounds

125

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“…[26][27][28][29][30][31] Thin films are indispensable for device applications, but there have been only a few works so far on the optical properties of SnO 2 thin films. 32,33 Until now, light emission in SnO 2 and the related mechanisms have remained as an issue of debates, and there is also a paramount need for theoretical insights. Furthermore, neither electroluminescence (EL) in the UV regime nor LEDs have ever been demonstrated in SnO 2 thin films.…”

Section: Introductionmentioning

confidence: 99%

Realizing a SnO2-based ultraviolet light-emitting diode via breaking the dipole-forbidden rule

et al. 2012

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Although many oxide semiconductors possess wide bandgaps in the ultraviolet (UV) regime, currently the majority of them cannot efficiently emit UV light because the band-edge optical transition is forbidden in a perfect lattice as a result of the symmetry of the band-edge states. This quantum mechanical rule severely constrains the optical applications of wide-bandgap oxides, which is also the reason why so few oxides enjoy the success of ZnO. Here, using SnO 2 as an example, we demonstrate both theoretically and experimentally that UV photoluminescence and electroluminescence can be recovered and enhanced in wide-bandgap oxide thin films with 'forbidden' energy gaps by engineering their nanocrystalline structures. In our experiments, the tailored low-temperature annealing process results in a hybrid structure containing SnO 2 nanocrystals in an amorphous matrix, and UV emission is observed in such hybrid SnO 2 thin films, indicating that the quantum mechanical dipole-forbidden rule has been effectively overcome. Using this approach, we demonstrate the first prototypical electrically pumped UV-lightemitting diode based on nanostructured SnO 2 thin films.

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“…The Sb 5+ substituted on the Sn 4+ site acts as donors and creates excess electrons. However, the Sb 3+ substituted on the Sn 4+ site acts as acceptors which would compensate the donor levels to decrease the electrical conductivity [6] . Therefore, the result from the competition between the Sb 5+ and Sb 3+ states, namely Sb 5+ /Sb 3+ ratio, is the main source to provide carrier concentration which is a key factor influencing the electrical properties.…”

Section: Electrical Properties Of the Ato Filmsmentioning

confidence: 99%

“…Tin-doped indium oxide (ITO) [4] is a widely used TCO but it is not suit for the sustainable economic development for its scarce resource, toxicity and high cost. Among TCOs, Sb doped SnO 2 (ATO) as a wide band gap semiconductor has been focused due to its prominent advantages such as abundant resources, chemical stability, thermal stability, non-toxicity, mechanical durability and especially low cost [5][6][7][8] .…”

Section: Introductionmentioning

confidence: 99%

“…Various deposition methods have been used to prepare the ATO thin films, such as sol-gel dipcoating technique [9][10][11] , spray pyrolysis technique [12][13][14] and magnetron sputtering technique [6][7] . The structural, electrical and optical properties of ATO thin films dependent on the fabrication parameters, such as deposition temperature, oxygen pressure, thickness, annealing treatment and Sb content, have been intensively investigated.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Comprehensive optimization of electrical and optical properties for ATO films prepared by pulsed laser deposition

Shen

Yang

et al. 2016

J. Wuhan Univ. Technol.-Mat. Sci. Edit.

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Antimony doped tin oxide (ATO) thin films have been prepared by pulsed laser deposition (PLD) method. The intrinsic effect of Sb dopant, including the Sb content, transition degree between Sb 3+ and Sb 5+ and crystallinity on the electrical and optical properties of the ATO thin films is mainly investigated. It is suggested that the transition degree of Sb 3+ towards Sb 5+ (Sb 5+ /Sb 3+ ratio) is determined by Sb content. When the Sb content is increased to 12 at%, the Sb 5+ /Sb 3+ ratio reaches the highest value of 2.05, corresponding to the resistivity of 2.70×10 -3 Ω·cm. Meanwhile, the Burstein-Moss effect caused by the increase of carrier concentration is observed and the band gap of the ATO thin films is broadened to 4.0 eV when the Sb content is increased to 12 at%, corresponding to the highest average optical transmittance of 92%. Comprehensively considering the combination of electrical and optical properties, the ATO thin films deposited with Sb content of 12 at% exhibit the best properties with the highest "figure of merit" of 3.85×10 -3 Ω -1 . Finally, an antimony selenide (Sb 2 Se 3 ) heterojunction solar cell prototype with the ATO thin film as the anode has been prepared, and a power conversion efficiency of 0.83% has been achieved.

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Structural and photoluminescence characters of SnO2:Sb films deposited by RF magnetron sputtering

Cited by 70 publications

References 21 publications

Structural and optoelectronic properties of antimony incorporated tin oxide thin films

Structural and optoelectronic properties of antimony incorporated tin oxide thin films

Realizing a SnO2-based ultraviolet light-emitting diode via breaking the dipole-forbidden rule

Comprehensive optimization of electrical and optical properties for ATO films prepared by pulsed laser deposition

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