Structural and resistive switching behaviour in lanthanum strontium manganite - Reduced graphene oxide nanocomposite system

Kumari, Karuna; Kumar, Ashutosh; Kotnees, Dinesh Kumar; Balakrishnan, Jayakumar; Thakur, Ajay D.; Ray, S. J.

doi:10.1016/j.jallcom.2019.152213

Cited by 24 publications

(11 citation statements)

References 42 publications

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“…Half-metallic (HM) ferromagnetic (FM) materials (where one spin channel shows a metallic behavior and another one contains an insulating or semiconducting nature, refers to 100% spin polarized) 1 – 3 have been attracted a great interest due to their functional technological applications in spintronics such as colossal magnetoresistance 4 , 5 and spin-transfer torque magnetic random access memory 6 – 8 . As recently Kumari et al 9 experimentally observed that perovskite manganite family such as demonstrated the bipolar resistive switching behavior. Similarly, a recent review on two-dimensional spinterfaces and magnetic-interfaces exhibits a wide range of applications in spintronics such magnetic tunnel junctions 10 .…”

Section: Introductionmentioning

confidence: 87%

Robust half-metallicity and magnetic phase transition in Sr2CrReO6 via strain engineering

Ain

Naseem

Nazir

2020

Sci Rep

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Using ab-initio calculations, the electronic and magnetic properties of double perovskite oxide with two type of strains: biaxial (along the [110]-direction) and hydrostatic (along [111]-direction) are investigated. The ground state of the unstrained system is half-metallic ferrimagnetic, due to a strong antiferromagnetic (AFM) coupling between Cr and Re atoms within both (GGA and GGA+ U ) exchange-correlation potentials. It is demonstrated that the robustness of half-metallicity can be preserved under the influence of both biaxial and hydrostatic strains. Interestingly, a transition from ferri-to-ferromagnetic is established due to Re spin flipping to that of the Cr ion (i.e. Cr and Re spin becomes parallel) within the GGA+ U method for both biaxial and hydrostatic tensile strains of . The strong confinement of orbitals due to tensile strain results in the decrease of electron hopping which further reduced the AFM coupling strength between Cr and Re atoms, this leads to a ferri-to-ferromagnetic transition. However, the GGA scheme holds the ferrimagnetic state with both kinds of strains. This work shows that tensile strain is a feasible way to optimize the magnetic properties of perovskite oxides, which are presumed to be beneficial for spintronic technology.

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Section: Introductionmentioning

confidence: 87%

Robust half-metallicity and magnetic phase transition in Sr2CrReO6 via strain engineering

Ain

Naseem

Nazir

2020

Sci Rep

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“…A nanocomposite consisting of La 0.7 Sr 0.3 MnO 3 (LSMO) and reduced graphene oxide (rGO) has been identified as a viable option for non-volatile memory applications in oxide electronic devices [51]. Individual component phases were identified because of the structural characterization process.…”

Section: Oxide Perovskites In Memory Devicesmentioning

confidence: 99%

Perovskites in Next Generation Memory Devices

How¹,

Sarjidan²,

Goh³

et al. 2022

Recent Advances in Multifunctional Perovskite Materials

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Although perovskites are widely employed in other industries such as photovoltaics and light-emitting diodes (LEDs), digital technology is rapidly gaining pace in today’s market and shows no signs of abating. As a result, the progress of system memory and memory storage has accelerated into new inventions. The invention of dynamic Random-Access Memory (RAM) in the 1960s laid the groundwork for today’s multibillion-dollar memory technology sector. Resistive switching (RS) capabilities of perovskite-based materials such as perovskite oxides and metal halides have been extensively studied. Chemical stability, high endurance, quick writing speed, and strong electronic interaction correlation are some of the benefits of employing perovskites in RS devices. This chapter will investigate the progress of system memory and memory storage employing perovskites, the advantageous properties of perovskites utilized in memory devices, the various types of RS employing perovskites, as well as the research challenges that perovskite-based memory systems face in future commercial development.

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“…On the other hand, resistive random access memory (RRAM) devices offer a wide range of applications in areas like switching, nonvolatile memory design, neuromorphic computing, , and so forth because of their superior memory features. RRAM devices work by switching between high- and low-resistance states, which are controlled by physical processes including vacancy migration and the trapping of charge carriers, among others.…”

Section: Introductionmentioning

confidence: 99%

Instantaneous Gelation of a Self-Healable Wide-Bandgap Semiconducting Supramolecular Mg(II)-Metallohydrogel: An Efficient Nonvolatile Memory Design with Supreme Endurance

Karmakar

Roy

Dhibar

et al. 2023

ACS Appl. Electron. Mater.

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An efficient strategy for room-temperature, atmospheric-pressure synthesis of a supramolecular metallohydrogel of the Mg(II) ion, i.e., Mg@3AP, using the metal-coordinating organic ligand 3-amino-1-propanol as a low-molecular-weight gelator (LMWG) in a water medium has been developed. Through a rheological analysis, we looked into the mechanical properties of the supramolecular Mg(II)-metallohydrogel. The self-healing nature of the metallohydrogel is confirmed along with the thixotropic characteristics. Investigation using field emission scanning electron microscopy revealed the hierarchical network of the supramolecular metallohydrogel. The EDX elemental mapping confirms the primary chemical constituents of the metallohydrogel. The possible metallohydrogel formation strategy has been analyzed through FT-IR spectroscopic studies. In this work, Schottky diode structures in a metal–semiconductor–metal geometry structures based on a magnesium(II) metallohydrogel (Mg@3AP) have been constructed, and charge transport behavior has been observed. Furthermore, here, it is demonstrated that the resistive random access memory (RRAM) device based on Mg@3AP exhibits bipolar resistive switching behavior at room temperature and ambient conditions. We have also looked into the switching mechanism through the formation (rupture) of conductive filaments between the metal electrodes to understand the process of resistive switching behavior. With a high on/off ratio (∼100), this RRAM device exhibits remarkable switching endurance over 10,000 switching cycles. These structures are suitable for use in nonvolatile memory design, neuromorphic computing, flexible electronics, and optoelectronics, among other fields, due to their simple fabrication procedures, reliable resistive switching behavior, and stability of the current system.

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Structural and resistive switching behaviour in lanthanum strontium manganite - Reduced graphene oxide nanocomposite system

Cited by 24 publications

References 42 publications

Robust half-metallicity and magnetic phase transition in Sr2CrReO6 via strain engineering

Robust half-metallicity and magnetic phase transition in Sr2CrReO6 via strain engineering

Perovskites in Next Generation Memory Devices

Instantaneous Gelation of a Self-Healable Wide-Bandgap Semiconducting Supramolecular Mg(II)-Metallohydrogel: An Efficient Nonvolatile Memory Design with Supreme Endurance

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