Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

Photoconductivity of gamma-irradiated Znse (Te)/ZnO:O and ZnSe(Te)/ZnO:O,Zn nanogeterojuctions

“…Irradiation led to decrease in Ne by an order of 4.610 15 cm -3 due to the destruction of the RL. HT in Zn (b, 1) vapors led to destruction of RL L1,3v, as a result Ne decreased to 2.7810 16 cm -3 and ZnSe(Te)/ZnO:O,Zn NHJ was formed. Irradiation with gamma quanta of this NHJ (b, 2) led to an insignificant increase in Ne=2.9710 16 cm -3 , an increase in scattering was also observed, independent of  in the range 480-1100 nm and associated with scattering on weakly bound carriers.…”

“…The thermodynamically stable ZnO/Ag nanocomposite with ZnO nanorods 30 -70 nm possessed high photosensitivity, the concentration of uncompensated ionized donor impurity Nd increased from 2.410 14 to 5.610 17 cm -3 [12]. The values of Nd~10 16 cm -3 are typical for nominally undoped ZnO with a characteristic n-type conductivity caused by small donor defects in the form of oxygen vacancies and interstitial zinc [13,14]. Concentrations of free charge carriers in ZnSe (Te) with thermodynamically stable lowmobile complexes VZnТеSe are in the range of ~ (1.2-1.6) 10 17 cm -3 [3].…”

“…It has been shown that with a decrease in the size of ZnO particles within the limits of 63 -315 µm, the response voltage of the I-V characteristic of the composite varistor increases from 20 to 150 V [15]. Isotropic heterostructures n-GaР-n + -(ZnSe)1-x-y(Si2)x(GaР)y (0x0.03, 0y0.09) have rectifying properties in the voltage range -20+ 15 V [16]. The temperature dependence of the electrical conductivity of a thin ZnSxSe1-x film at 300-500 K is associated with loosely coupled Mott-type transitions and decreases with increasing S content, while the crystals with activation energy (Ea) of hops increases from 0.13 to 1.89 eV with temperature [17].…”

Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

“…The majority carrier mobility (electrons of solid solution n (Si 2 ) 1 -x (CdS) x ), determined by the Hall method, was μ n ≈ 300 cm 2 /V s; hence, the concentration of deep impurities causing the injection depletion effect is N t ≈ 9.13 × 10 12 cm -3 . In [20], diffraction patterns of Si 1 -x Sn x solid solution grown from a tin solution-melt were studied. It was found that tin can not only substitute site silicon atoms, but also are segregated at sites between blocks of silicon atoms, at interphase boundaries, and can appear at interstices.…”

Preparation and Morphological Studies of Epitaxial Layers of a Solid Solution Si1–xGex

“…В настоящее время для создания полупроводниковых приборов используют гетероструктуры на основе твердых растворов соединений класса А IV В IV . Преимущество двукомпонентных твердых растворов состоит в возможности сохранения кристаллически совершенной структуры, при плавном и незначительном изменении вдоль направления роста периода кристаллической решетки a пленок и изменении ширины запрещенной зоны E g [1][2][3][4].…”