Structural inhomogeneity in silicon-on-insulator probed with coherent X-ray diffraction

Shi, Xiaowen; Xiong, Gang; Huang, Xiaojing; Harder, Ross; Robinson, Ian

doi:10.1524/zkri.2010.1354

Cited by 4 publications

(3 citation statements)

References 18 publications

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“…Th ese defects have been reported in the literature for crystals produced by Silicon-on-insulator technologies (see ref. 25 and references therein).…”

Section: Resultsmentioning

confidence: 99%

Three-dimensional high-resolution quantitative microscopy of extended crystals

et al. 2011

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Hard X-ray lens-less microscopy raises hopes for a non-invasive quantitative imaging, capable of achieving the extreme resolving power demands of nanoscience. However, a limit imposed by the partial coherence of third generation synchrotron sources restricts the sample size to the micrometer range. Recently, X-ray ptychography has been demonstrated as a solution for arbitrarily extending the fi eld of view without degrading the resolution. Here we show that ptychography, applied in the Bragg geometry, opens new perspectives for crystalline imaging. The spatial dependence of the three-dimensional Bragg peak intensity is mapped and the entire data subsequently inverted with a Bragg-adapted phase retrieval ptychographical algorithm. We report on the image obtained from an extended crystalline sample, nanostructured from a silicon-on-insulator substrate. The possibility to retrieve, without transverse size restriction, the highly resolved three-dimensional density and displacement fi eld will allow for the unprecedented investigation of a wide variety of crystalline materials, ranging from life science to microelectronics.

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“…Th ese defects have been reported in the literature for crystals produced by Silicon-on-insulator technologies (see ref. 25 and references therein).…”

Section: Resultsmentioning

confidence: 99%

Three-dimensional high-resolution quantitative microscopy of extended crystals

et al. 2011

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“…In a previous work, the SOI bare wafer structure has been found to be inhomogeneous using microbeam x-ray diffraction [10]. This was attributed to the presence of defects trapped at the oxide interface after bonding.…”

Section: Soi Fabrication Techniquesmentioning

confidence: 95%

Radiation-induced bending of silicon-on-insulator nanowires probed by coherent x-ray diffractive imaging

et al. 2012

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“…With the ability to achieve quantitative 3D imaging of lattice strain on the nanometer scale, BCDI is becoming a powerful technique for the structural characterization of nano materials and devices. A wide range of applications has been exploited based on the BCDI technique, typical examples including the studying of nanocrystals, nanowires, catalyst microcrystals, materials under high pressure, lattice dynamics and examination of the diffusion behaviors inside nanocrystals, among others, by analyzing the structure, defect and strain either in the static or dynamic process. In the following section, we will focus on the progress on the strain distribution investigation in strained‐silicon‐on‐insulator structures, in which the strain plays a critical role in enhancing device performance.…”

Section: Coherent X‐ray Diffraction Imaging (Cdi)mentioning

confidence: 99%

Coherent X‐Ray Diffraction Imaging and Characterization of Strain in Silicon‐on‐Insulator Nanostructures

et al. 2014

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Coherent X-ray diffraction imaging (CDI) has emerged in the last decade as a promising high resolution lens-less imaging approach for the characterization of various samples. It has made significant technical progress through developments in source, algorithm and imaging methodologies thus enabling important scientific breakthroughs in a broad range of disciplines. In this report, we will introduce the principles of forward scattering CDI and Bragg geometry CDI (BCDI), with an emphasis on the latter. BCDI exploits the ultra-high sensitivity of the diffraction pattern to the distortions of crystalline lattice. Its ability of imaging strain on the nanometer scale in three dimensions is highly novel. We will present the latest progress on the application of BCDI in investigating the strain relaxation behavior in nanoscale patterned strained silicon-on-insulator (sSOI) materials, aiming to understand and engineer strain for the design and implementation of new generation semiconductor devices.

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Structural inhomogeneity in silicon-on-insulator probed with coherent X-ray diffraction

Cited by 4 publications

References 18 publications

Three-dimensional high-resolution quantitative microscopy of extended crystals

Three-dimensional high-resolution quantitative microscopy of extended crystals

Radiation-induced bending of silicon-on-insulator nanowires probed by coherent x-ray diffractive imaging

Coherent X‐Ray Diffraction Imaging and Characterization of Strain in Silicon‐on‐Insulator Nanostructures

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