Structural macro-defects in 6H-SiC wafers

Structural analyses for SiC and AlGaN grown on off-axis 4H- and 6H-SiC

“…The planar density for the 2H and 4H is the same for all of the planes, but for the 6H structure it can be seen in Fig. 2d and Tables 2 and 3 that the planar density is either 2 3 that of the (1 0 0) C plane or it is 1 6 . Using the number of atoms lying on the trace in the repeat distance as the measure of the planar density, the packing of the 6H planes starting at the trace is 4C/1A/1C/4A/1C/1A/4C.…”

“…The crystals usually contain a substantial number of screw dislocations and their associated micropipes with their axes approximately parallel to the c-direction [2][3][4]. It is generally accepted that micropipes destroy devices fabricated over them [5], and many believe that the screw dislocations diminish the device capabilities by, e.g., lowering the breakdown voltage [6,7].…”

Nucleation of AlN on SiC substrates by seeded sublimation growth

“…The presence of multiple peaks implied that the AlN crystals were composed of multiple domains within the footprint of X-ray beam, which were slightly misoriented with respect to each other [16]. This phenomenon was well known in the sublimation growth of SiC boules [17]. The individual domains or subgrains of crystal were separated by boundaries since they had different dislocation densities, difference stacking sequence, or a little basal-plane-tilt [16][17][18][19].…”

“…This phenomenon was well known in the sublimation growth of SiC boules [17]. The individual domains or subgrains of crystal were separated by boundaries since they had different dislocation densities, difference stacking sequence, or a little basal-plane-tilt [16][17][18][19]. The full width at half maximum (FWHM) of AlN (0 0 0 2) peak of the offaxis grown film, 576 arcsec, is much larger than that of the on-axis grown film, 218 and 246 arcsec.…”

Growth of Silicon Carbide

“…Persistent sources of dislocations are the low-angle grain boundaries between misoriented domains, the latter being a subject of several investigations concerning the domain origin [51][52][53]. The majority of results have supported the assumption that SiC crystals grow with the aid of screw dislocations (spiral growth mechanism) providing numerous independent growth centers.…”