Structural, Optical, and Electrical Studies on Pulse Plated AgInSe_2 Films

Abstract

In this work, the pulse electrodeposition technique was employed for the rst time to deposit AgInSe2 lms. The lms were deposited at room temperature from a bath containing Analar grade 10 mM silver sulphate, 50 mM indium sulphate and 5 mM SeO2. The deposition potential was maintained at −0.98 V (SCE). Tin oxide coated glass substrates (5.0 Ω/sq) were used for depositing the lms. The duty cycle was varied in the range of 650%. The X-ray diraction pattern of the thin lms deposited at dierent duty cycles indicated the peaks corresponding to AgInSe2. The transmission spectra exhibited interference fringes. Resistivity of the lms increased from 1.5 Ω cm to 12.4 Ω cm. Mobility increased with duty cycle. Carrier density decreased with duty cycle. The photovoltaic parameters of CdS/AgInSe2 solar cells increased with duty cycle.

Thickness Effect of CuAlTe2 Thin Films on Morphological, Structural and Visual Properties

“…Also it was observing from Figure 3. That absorbance increased with increasing of thickness reaching to high absorbance over (80%) in the visible region when t= 500 nm, that agreement with Murugan and Murali [27][28][29]. This increasing can be attributed to the improved crystalline arrangement and the decreasing of crystalline defects, the bigger crystalline sizes were formed and in this case extra atoms existing in the CuAlTe2 films so extra states would be available of the photons to be absorbed [30,31].…”

AgInSe2 Thin Films Prepared by Electrodeposition Process

“…The plots of (αhν) 2 versus (hν) and the extrapolation of the linear portion of the plots onto the energy axis gave the band gap value of about 1.24 eV. This value is in good agreement with those reported in the literature for AgInSe 2 prepared by other methods [2,4,13,15,[24][25][26].…”