Structural Properties and Electrical Characteristics of Praseodymium Oxide Gate Dielectrics

Abstract

Structural properties and electrical characteristics of praseodymium oxide gate dielectrics grown on Si substrate by reactive rf sputtering were investigated. The structure, composition, and interfacial characteristics of these dielectrics were examined using X-ray diffraction and X-ray photoelectron spectroscopy. It is found that Pr 2 O 3 gate dielectric with TaN metal gate annealed at 700°C exhibits a higher capacitance value ͑ϳ450 pF, EOT = 2.41 nm͒ and lower flatband voltage ͑ϳ−0.5 V͒ in C-V curves, and shows the leakage value of ϳ5 ϫ 10 −7 A/cm 2 at a bias of 2 V. They also show negligible charge trapping under high constant voltage stress. This phenomenon is attributed to a rather well-crystallized Pr 2 O 3 and the decrease of the interfacial layer and Pr silicate thickness.

Development of a High-k Pr$_{2}$O$_{3}$ Sensing Membrane for pH-ISFET Application

“…3. The spectra are in good agreement with those shown in [19] and [21]. The reference peak located at 933.9 eV for 3d and 928.8 eV for 3d is assigned to praseodymium in praseodymium oxide, respectively.…”

“…The intermediate energy state (531.8 eV) is attributed to interfacial O atoms in nonstoichiometric silicate (PrSi O ). The high energy state (533 eV) is attributed to O in SiO [19]. The feature at 531.8 eV is distinctly different from both O in SiO (high energy feature at 533 eV) and O in Pr O (low-energy feature at 530.7 eV).…”

“…In addition, we showed that Pr O thin film was deposited on Si substrate by sputtering as a promising gate dielectric material for highly scaled gate insulators, displaying small interface state densities of 1/cm -eV and low leakage current densities of A/cm at a bias of 2 V for an equivalent oxide thickness of 2.41 nm [19]. In this paper, the physical and sensing properties of physical vapor deposition (PVD) Pr O dielectrics deposited on Si substrate were studied.…”

Electrical Characteristics of Low-Temperature Poly-Silicon Thin-Film Transistor Using a Stacked Pr2O3/SiOxNy Gate Dielectric

“…However, it is a difficult technological challenge to develop the enhancement of TFTs performance for both pixel and display circuits. Recently, it has been reported that LaAlO 3 and HfO 2 gate dielectrics [1,2] into LTPS TFTs exhibited excellent device performance due to their thin equivalent oxide thickness and high gate capacitance density. Furthermore, rare-earth-metal oxide films including La 2 O 3 and Pr 2 O 3 [3] have been studied to be suitable as gate oxides because of their high dielectric constant, large bandgap, and good thermodynamic stability in contact with poly-Si or Si.…”

Physical and Electrical Properties of High-k PrTi[sub x]O[sub y] Nanocrystal Memories

“…9,10 Recently, we showed that thin praseodymium oxides are promising candidates for highly scaled gate insulators, displaying a lower interfacial density of state and smaller stress-induced leakage current. 11 In addition, it has been reported 12 that an amorphous PrTi x O y deposited on the Si by E-beam evaporation exhibited excellent electrical and physical properties. In this paper, we explore a high-k PrTi x O y nanocrystal film as the chargetrapping layer deposited on the tunneling oxide of memory devices using reactive radio frequency ͑rf͒ sputtering.…”