Structural properties and electrical characteristics of praseodymium oxide gate dielectrics grown on Si substrate by reactive rf sputtering were investigated. The structure, composition, and interfacial characteristics of these dielectrics were examined using X-ray diffraction and X-ray photoelectron spectroscopy. It is found that Pr 2 O 3 gate dielectric with TaN metal gate annealed at 700°C exhibits a higher capacitance value ͑ϳ450 pF, EOT = 2.41 nm͒ and lower flatband voltage ͑ϳ−0.5 V͒ in C-V curves, and shows the leakage value of ϳ5 ϫ 10 −7 A/cm 2 at a bias of 2 V. They also show negligible charge trapping under high constant voltage stress. This phenomenon is attributed to a rather well-crystallized Pr 2 O 3 and the decrease of the interfacial layer and Pr silicate thickness.

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Praseodymium oxide film was grown on Si substrate by reactive RF-sputtering from a Pr target for TaN metal gate. We found that Pr 2 O 3 gate dielectric with TaN metal gate annealed at 700°C exhibits a higher capacitance value and lower flatband voltagein C-V curves, and shows the leakage value of ~5x10-7 A/cm 2 at a bias of 2 V. This Pr 2 O 3 gate dielectric appears to be very promising for future ULSI devices.