Forming-free resistive switching of TiO&lt;inf&gt;x&lt;/inf&gt; layers with oxygen injection treatments

Hsieh, Chun-I; Jao, Jui-Hsiu; Chen, Wei-Chia; Wu, Chang-Rong; Shih, Neng-Tai

doi:10.1109/vtsa.2011.5872234

Cited by 3 publications

(2 citation statements)

References 4 publications

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“…This forming step is undesirable for many reasons including the requirement of larger drive circuitry, and issues with reproducibility 12 and yield. 13 In addition to the remaining physical questions, there are many unsolved issues regarding fabrication, as devices deposited at nominally the same conditions often display substantial differences in behavior. We propose that many of these differences, especially for large area wafers, are due to varied stoichiometries across the wafer and between wafers.…”

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confidence: 99%

Optimizing TaOx memristor performance and consistency within the reactive sputtering “forbidden region”

Lohn

Stevens

Mickel

et al. 2013

Applied Physics Letters

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Standard deposition processes for depositing ReRAM oxides utilize mass flow of reactive gas to control stoichiometry and have difficulty depositing a precisely defined sub-stoichiometry within a “forbidden region” where film properties are discontinuous with mass flow. We show that by maintaining partial pressure within this discontinuous “forbidden region,” instead of by maintaining mass flow, we can optimize tantalum oxide device properties and reduce or eliminate the electroforming step. We also show that defining the partial pressure set point as a fraction of the “forbidden region” instead of as an absolute value can be used to improve wafer-to-wafer consistency with minimal recalibration efforts.

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mentioning

confidence: 99%

Optimizing TaOx memristor performance and consistency within the reactive sputtering “forbidden region”

Lohn

Stevens

Mickel

et al. 2013

Applied Physics Letters

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show abstract

“…For example, by intentionally creating a thick layer of oxygen vacancy reach layer (TiO 2−x ) in the TiO 2 switching layer, formingfree behavior has been observed in the device [49]. Devices with HfO 2 /TiO 2 double oxide layer showed much improved switching uniformity [50].…”

Section: Multilayer Devicesmentioning

confidence: 99%

Memristor Device Engineering and CMOS Integration for Reconfigurable Logic Applications

Xia

2013

Memristors and Memristive Systems

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Improved memory and synaptic device performance of HfO2-based multilayer memristor by inserting oxygen gradient TiOx layer

Park,

Jang,

Byun

et al. 2025

Chaos, Solitons & Fractals

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Forming-free resistive switching of TiO<inf>x</inf> layers with oxygen injection treatments

Cited by 3 publications

References 4 publications

Optimizing TaOx memristor performance and consistency within the reactive sputtering “forbidden region”

Optimizing TaOx memristor performance and consistency within the reactive sputtering “forbidden region”

Memristor Device Engineering and CMOS Integration for Reconfigurable Logic Applications

Improved memory and synaptic device performance of HfO2-based multilayer memristor by inserting oxygen gradient TiOx layer

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