2010
DOI: 10.1002/pssc.200982903
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Structural properties of intrinsic and doped nc‐Si:H films prepared by RFMS: Study as function of deposition time and substrate temperature

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Cited by 3 publications
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“…This means that the electrons are smeared out into broader bands and that their resonance frequencies are lower than for ionically bonded materials. Usually these materials can be described by a single energy gap and single broad absorption band above the energy gap (example Silicon see work [43]). From these simulations by Lorentz model, we can determined the average gap EM centered at 260 nm equivalent to energy EM=4.68 eV.…”
Section: Optical Resultsmentioning
confidence: 99%
“…This means that the electrons are smeared out into broader bands and that their resonance frequencies are lower than for ionically bonded materials. Usually these materials can be described by a single energy gap and single broad absorption band above the energy gap (example Silicon see work [43]). From these simulations by Lorentz model, we can determined the average gap EM centered at 260 nm equivalent to energy EM=4.68 eV.…”
Section: Optical Resultsmentioning
confidence: 99%