The most widely used hole transport layer (HTL) for n‐i‐p perovskite solar cells (PVSCs), 2,2′,7,7′‐tetrakis(N,N‐di‐p‐methoxyphenylamine)‐9,9′‐spirobifluorene (spiro‐OMeTAD), suffers a severe degradation from the permeation of moisture and direct contact with the metal electrode, mainly due to hygroscopic additives and the presence of pinholes in the spiro‐OMeTAD film. To overcome this problem, we developed a stable inorganic copper‐based chalcogenide (CuxS, x = 1.75) that can cooperate with spiro to serve as the HTL for planar n‐i‐p PVSCs. The CuxS HTL has two main functions: 1) enhancing hole transport due to its high intrinsic mobility and proper energy level alignment, resulting in a better charge transfer and reduced charge recombination; 2) protecting the spiro layer from damage from both moisture and the top Au anode, through the formation of a physical hydrophobic buffer layer. PVSCs with enhanced power conversion efficiencies (PCEs) are realized through this simple approach, yielding the highest PCE of 18.58% and a steady‐state PCE of 17.91%. Furthermore, benefiting from the hydrophobic nature of CuxS, PVSCs retained over 90% of their initial efficiency, even after storage in air with approximately 40% humidity for 1000 h without encapsulation. This study demonstrates that CuxS is a potential hole transport material for fabricating low‐cost and efficient PVSCs with long‐term stability.