Structural studies of ITO thin films with the Rietveld method

Quaas, M.; Eggs, C.; Wulff, H.

doi:10.1016/s0040-6090(98)01064-5

Cited by 69 publications

(42 citation statements)

References 9 publications

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“…As previously reported, Frank et al [2] found that a small decrease at low doping concentrations (c Sn < 2 at%) is followed by an increase of the lattice constant with the tin concentration. A decrease in the lattice constant of thin ITO films for low Sn doping and a subsequent increase for Sn concentrations higher than 5% was observed also by Quaas et al [18]. Nadaud et al [8] saw that the tin doping (up to 5 -6 at% Sn) leads only to a continuous increase in the lattice constant.…”

Section: X-ray Powder Diffractionmentioning

confidence: 58%

Hyperfine interactions and site occupancy in Sn‐doped In₂O₃ (ITO)

Binczycka

Uhrmacher

Elidrissi-Moubtassim

et al. 2005

Physica Status Solidi (b)

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The hyperfine interactions in indium-tin-oxide were studied by 119 Sn Mössbauer spectroscopy. Polycrystalline samples with tin contents from 0.5 to 10 at% Sn on the cation sublattice were measured and compared to the results of 111 In and 111m Cd Perturbed Angular Correlation measurements. The Mössbauer data demonstrate that Sn ions are in a 4+ state. The values of the quadrupole splitting, isomer shift and area ratios undergo changes when increasing the Sn content. The tin cations show a strong preference for the B site versus the D site. The occupancy of Sn on each of the two non-equivalent cation sites also harmonizes with neutron diffraction data.

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Section: X-ray Powder Diffractionmentioning

confidence: 58%

Hyperfine interactions and site occupancy in Sn‐doped In₂O₃ (ITO)

Binczycka

Uhrmacher

Elidrissi-Moubtassim

et al. 2005

Physica Status Solidi (b)

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“…4,5 In most applications the production of thin ITO films is necessary. For this purpose common methods of layer deposition such as evaporation of In 2 O 3 and SnO 2 powders [6][7][8][9][10][11][12] and ͑magnetron͒ dc-and rf-sputtering 2,[13][14][15][16][17][18][19] spray pyrolysis 1,5,20 are widely used. 21 Additionally some other methods of thin-film production have evolved.…”

Section: Introductionmentioning

confidence: 99%

Formation of metallic indium-tin phase from indium-tin-oxide nanoparticles under reducing conditions and its influence on the electrical properties

Günther¹,

Schierning²,

Theissmann³

et al. 2008

Journal of Applied Physics

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The correlation between defect structure, metal segregation, and electrical resistivity of indium-tin-oxide nanopowder upon treatment in reducing atmosphere was investigated. Morphology and defect structure have been investigated by in situ synchrotron x-ray diffraction and transmission electron microscopy, while traces of metallic indium have been detected by susceptibility measurements utilizing the superconducting properties of indium. With increasing treatment temperature under reforming gas the film resistivity decreases down to = 1.6 ϫ 10 −2 ⍀ cm at 330°C annealing temperature. For even higher treatment temperatures, the resistivity increases further. This is accompanied by extractions of metallic indium. Under forming gas, grain growth could be observed at 350°C, while in air grain growth starts at 650°C. Furthermore forming gas causes a lattice expansion of ITO which persists in oxygen, at least for several hours. The results are discussed with respect to results published in the literature.

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“…spray pyrolysis [4][5][6][7][8][9][10][11][12][13][14][15][16], sol-gel process [17], R.F. sputtering [18][19], evaporation [20], magnetron sputtering [21], electron beam evaporation [22][23], pulsed laser deposition [24], etc. Among these, the spray pyrolysis technique is one of the most commonly used techniques for preparation of transparent and conducting oxides owing to its simplicity, non-vacuum of the deposition and inexpensive method for large area coatings.…”

Section: Introductionmentioning

confidence: 99%