Structure and bonding in photodiffused amorphous Ag-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">GeSe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>thin films

Fischer-Colbrie, A.; Bienenstock, Arthur; Fuoss, P. H.; Marcus, Matthew A.

doi:10.1103/physrevb.38.12388

Cited by 41 publications

(25 citation statements)

References 26 publications

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“…The form of the resulting structure has been proposed [3]. X-ray diffraction and scattering studies have been carried out on Ge 10 Se 90 and the stoichiometric composition GeSe 2 showing the formation of Ag 2 Se and in some cases Ag 2 SeO 4 [4] or Ag 2 Se and Ag 8 GeSe 6 on a very fine scale of phase separation [5].…”

Section: Introductionmentioning

confidence: 99%

Crystallization effects in annealed thin Ge–Se films photodiffused with Ag

Balakrishnan

Kozicki

Poweleit

et al. 2006

Journal of Non-Crystalline Solids

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Section: Introductionmentioning

confidence: 99%

Crystallization effects in annealed thin Ge–Se films photodiffused with Ag

Balakrishnan

Kozicki

Poweleit

et al. 2006

Journal of Non-Crystalline Solids

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“…The mechanism of this effect has been studied by different experimental and theoretical methods [4][5][6][7][8], but atomistic and chemical origin of the observed structural transformations is still under discussion. High resolution X-ray photoelectron spectroscopy (XPS) is one of the most effective methods to examine the changes in chemical composition and electronic structure of the materials, which can be utilized also for photodiffusion studies.…”

Section: Introductionmentioning

confidence: 99%

Evolution of chemical structure during silver photodiffusion into chalcogenide glass thin films

Kovalskiy¹,

Jain²,

Mitkova³

2009

Journal of Non-Crystalline Solids

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This is an author-produced, peer-reviewed version of this article. AbstractThe change of chemical structure resulting after X-ray and photo-induced silver diffusion into chalcogenide glass (ChG) thin films is monitored by high resolution X-ray photoelectron spectroscopy (XPS). As 40 S 60 and Ge 30 Se 70 thin films, which are based on pyramids and tetrahedral structural units, are investigated as model materials. Survey, core level (As 3d, S 2p, Ge 3d, Ge 2p, Se 3d, Ag 3d 5/2 , O 1s, C 1s) and valence band spectra have been recorded and analyzed. Reference point for the binding energy is established by the subsequent deposition of thin gold film on top of the measured samples. The chemical structure gradually changes during diffusion of silver in all the samples. The mechanism of change depends on the chemical composition, thickness of the diffused silver layer and conditions of irradiation. It is revealed that surface oxygen can play important role in the Ag photodiffusion process, leading to phase separation on the surface of the films. Photodiffusion of Ag into As 40 S 60 film leads to the formation of a uniform ternary phase and arsenic oxides on the surface. The formation of ethane-like Ge 2 (S 1/2 ) 6 units together with germanium oxidation are the main outcomes of X-ray induced Ag diffusion into Ge 30 Se 70 film.

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“…Esta contribución es de esperar que aumente con el contenido de plata, lo que explicaría la tendencia encontrada para el parámetro de dispersión, E d . Es necesario indicar que se ha encontrado plata altamente coordinada (N Ag = 4) en otros materiales calcogenuros amorfos que contienen dicho metal (24), lo que refuerza los argumentos expuestos.…”

Section: Resultados Y Discusionunclassified

Influencia del contenido metálico sobre las constantes ópticas de laminas delgadas amorfas de composición As<sub>33</sub>S<sub>67</sub> fotodopadas con Ag

González-Leal¹,

Wagner²,

Bernal-Oliva³

et al. 2000

Bol. Soc. Esp. Ceram. Vidr.

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Se han preparado láminas delgadas amorfas calcogenuras de composición Ag x (As 0.33 S 0.67 ) 100-x , mediante el fenómeno fotoinducido conocido como fotodisolución o fotodopaje, alcanzándose concentraciones de Ag en las muestras de hasta un 16.5 % at. Las constantes ópticas de las láminas fotodopadas, se han determinado haciendo uso de un método de caracterización basado en las envolventes de los espectros de transmisión óptica obtenidos en incidencia normal. El análisis de la dispersión del índice de refracción se ha realizado siguiendo el modelo propuesto por Wemple-DiDomenico, basado en la aproximación del oscilador armónico simple. Este modelo ha permitido obtener información estructural de las láminas fotodopadas, a partir de los resultados ópticos. El borde de absorción óptica de las láminas fotodopadas se ha analizado sobre la base del modelo de transición no directa propuesto por Tauc, encontrando una disminución del gap óptico del producto fotodopado, con el contenido de plata. Palabras clave: semiconductores amorfos, vidrios calcogenuros, láminas delgadas, constantes ópticas, efectos fotoinducidos.Influence of the metal content in the optical constants of silver-photodoped As 33 S 67 amorphous thin films Ag x (As 0.33 S 0.67 ) 100-x amorphous chalcogenide thin films have been prepared by the process of photodissolution or photodoping, reaching silver concentrations of up to 16.5 at. %. The optical constants of the photodoped thin-film samples have been calculated from the envelopes of the transmission spectra, taken at normal incidence. The dispersion of the refractive index was analysed on the basis of the single-oscillator model proposed by Wemple and DiDomenico. This model allows obtaining structural information of the silver-photodoped layers from optical data. The optical absorption edge is described using the non-direct transition model suggested by Tauc, and a clear decrease of the optical gap of the photodoped product, with the silver content, has been found.Keywords: amorphous semiconductors, chalcogenide glasses, thin films, optical constants, photoinduced effects. INTRODUCCION.Los materiales calcogenuros amorfos resultan de gran interés dada la variedad de efectos fotoinducidos que muestran. Entre ellos, podemos citar los siguientes: fotovaporización, fotopolimerización, fotovitrificación y fotodisolución de ciertos metales (habitualmente Ag y Zn) (1-3). Todos ellos dan lugar a cambios en las constantes ópticas, así como a desplazamientos del borde de absorción (fotooscurecimiento o fotoaclarado) de estos materiales (4). El más atractivo de cara a sus posibles aplicaciones tecnológicas en el campo del registro óptico y en la fabricación de dispositivos ópticos difractivos es, sin duda, el fenómeno de la fotodisolución de metales, también denominado fotodopaje (1,5). Este fenómeno consiste en la incorporación de iones metálicos en el seno del material calcogenuro, mediante la exposición a radiación de energía cercana al valor del gap óptico del material (usualmente luz ultravioleta) (1,6). Au...

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Structure and bonding in photodiffused amorphous Ag-GeSe2thin films

Cited by 41 publications

References 26 publications

Crystallization effects in annealed thin Ge–Se films photodiffused with Ag

Crystallization effects in annealed thin Ge–Se films photodiffused with Ag

Evolution of chemical structure during silver photodiffusion into chalcogenide glass thin films

Influencia del contenido metálico sobre las constantes ópticas de laminas delgadas amorfas de composición As<sub>33</sub>S<sub>67</sub> fotodopadas con Ag

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