Structure and Doping Determined Thermoelectric Properties of Bi<sub>2</sub>Se<sub>3</sub>Thin Films Deposited by Vapour–Solid Technique

Andzane, Jana; Buks, Krisjanis; Strakova, Malvine Nelda; Zubkins, Mārtiņš; Bechelany, Mikhaël; Marnauza, Mikelis; Baitimirova, Margarita; Erts, Donāts

doi:10.1109/tnano.2019.2939862

Cited by 26 publications

(24 citation statements)

References 26 publications

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“…However, because of the higher resistivity of these films, the resulting PF of these ultrathin films is lower than Bi 2 Se 3 and Sb 2 Te 3 ultrathin films deposited on mica. The reason for such a difference in properties may be mechanical and chemical defects of the quartz substrates, serving as multiple nucleation centers and resulting in formation of the film having more grain boundaries (boundaries between the coalesced nanoplates) than the ultrathin films deposited on mica, which is supported by the difference in intensity ratios of the XRD peaks, as well as by the previously reported structural investigation of the thicker films deposited on mica, quartz, and graphene [18,20]. While measurements of in-plane thermoelectric properties of ultrathin films deposited on graphene are challenging due to the high electrical and thermal conductivity of graphene, it is expected that because of the epitaxial growth they will be similar to the ultrathin films deposited on mica.…”

Section: Electrical and Thermoelectric Characterizationmentioning

confidence: 68%

“…This indicates well-oriented growth of Bi 2 Se 3 , with crystallographic c-axis oriented perpendicularly to the substrate surface [20,29]. The intensity ratios for the peaks related to (006) and (009) reflection planes are 4.2 and 6.3 for the 20 nm thin film deposited on quartz and 6 nm thin film deposited on graphene, respectively, indicating a more uniform orientation of the ultrathin films grown on graphene in comparison with the ultrathin films grown on quartz, which is related to the epitaxial growth [20]. Similarly to the Bi 2 Se 3 , the most of peaks presented in the XRD spectra of the Sb 2 Te 3 thin films (Fig.…”

Section: Structural Characterizationmentioning

confidence: 81%

“…The substrate was placed in the temperature region ensuring formation of stoichiometric Bi 2 Se 3 [18,20]. Presumably, the layerby-layer growth of Bi 2 Se 3 ultrathin films when separate Bi and Se sources are used instead of Bi 2 Se 3 powder can be explained by specifics of evaporation and deposition processes of different source materials.…”

Section: Synthesismentioning

confidence: 99%

“…Copper wires were attached to the gold electrodes using electrically conductive adhesive (EPO-TEK®H20E). Thermally generated by the TEG prototype voltage was measured using a homemade device for thermoelectrical measurements [20] The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.…”

Section: Fabrication and Testing Of A Teg Prototypementioning

confidence: 99%

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Thickness-dependent properties of ultrathin bismuth and antimony chalcogenide films formed by physical vapor deposition and their application in thermoelectric generators

Andzane

Felsharuk

Šarakovskis

et al. 2021

Materials Today Energy

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In this work, a simple cost-effective physical vapor deposition method for obtaining high-quality Bi 2 Se 3 and Sb 2 Te 3 ultrathin films with thicknesses down to 5 nm on mica, fused quartz, and monolayer graphene substrates is reported. Physical vapor deposition of continuous Sb 2 Te 3 ultrathin films with thicknesses 10 nm and below is demonstrated for the first time. Studies of thermoelectrical properties of synthesized Bi 2 Se 3 ultrathin films deposited on mica indicated opening of a hybridization gap in Bi 2 Se 3 ultrathin films with thicknesses below 6 nm. Both Bi 2 Se 3 and Sb 2 Te 3 ultrathin films showed the Seebeck coefficient and thermoelectrical power factors comparable with the parameters obtained for the highquality thin films grown by the molecular beam epitaxy method. Performance of the best Bi 2 Se 3 and Sb 2 Te 3 ultrathin films is tested in the two-leg prototype of a thermoelectric generator.

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Section: Electrical and Thermoelectric Characterizationmentioning

confidence: 68%

Section: Structural Characterizationmentioning

confidence: 81%

Section: Synthesismentioning

confidence: 99%

Section: Fabrication and Testing Of A Teg Prototypementioning

confidence: 99%

See 2 more Smart Citations

Thickness-dependent properties of ultrathin bismuth and antimony chalcogenide films formed by physical vapor deposition and their application in thermoelectric generators

Andzane

Felsharuk

Šarakovskis

et al. 2021

Materials Today Energy

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show abstract

“…27,28 Bi 2 Se 3 nanostructured coatings of thicknesses ~110 -130 nm were synthesized using catalyst-free vapour-solid deposition method in a horizontal tube of single-zone quartz tube furnace (GSL-1100X, MTI Corp.) on quartz and graphene substrates, as previously described elsewhere. 26,29,30 Bi 2 Se 3 crystals (99.99% Sigma Aldrich) were used as a source material, which was evaporated at 585 °C temperature and deposited on substrates placed downstream at 330-380 °C temperature. The pressure inside the tube during the synthesis gradually increased from 200 mTorr to 4 Torr.…”

Section: Q/bi 2 Se 3 /Zno and G/bi 2 Se 3 /Zno Heterostructure Preparmentioning

confidence: 99%

Improved Crystalline Structure and Enhanced Photoluminescence of ZnO Nanolayers in Bi₂Se₃/ZnO Heterostructures

Baitimirova¹,

Andzane²,

Viter

et al. 2019

J. Phys. Chem. C

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Bi 2 Se / ZnO heterostructure is a new combination of high and low band gap nanomaterials that can be implemented for optoelectronic devices. Influence of the Bi 2 Se 3 substrate on crystallization of ZnO nanolayers and charge separation at the Bi 2 Se 3 /ZnO interface are important parameters, which affect optical and electronic properties of the heterostructure. Despite a few works on Bi 2 Se 3 / ZnO heterostructures, the mechanisms of enhanced optical properties and correlation between optical and structural properties in such heterostructures are not studied in detail. In the present paper, we report on structure and optical properties of ZnO nanolayers with different thicknesses (10-150 nm) deposited by atomic layer deposition

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Highly Efficient Flexible n‐Type Thermoelectric Films Formed by Encapsulation of Bi₂Se₃‐MWCNT Hybrid Networks in Polyvinyl Alcohol

Buks

Andzane

Bugovecka

et al. 2022

Adv Materials Inter

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where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature, and κ is the thermal conductivity. Having both n-and p-type TE materials is an essential requirement for building an efficient TE device. [3] So far the use of organic-inorganic nanocomposites, where electrically conductive p-or n-type polymer is used as a matrix for supporting a network of carbon nanotubes (CNTs) and/or inorganic TE nanostructures as flakes, nanoplates, or nanowires has shown the greatest potential for engineering efficient flexible TE devices. [4] CNTs have been reported to be one of the most promising components for producing p-type flexible TE nanocomposites. [5][6][7][8][9] However, application of CNTs in n-type TE composites is complicated due to necessity of CNTs pretreatment (annealing under high vacuum) for oxygen desorption and transition of their conductivity type from p-type (arising from extrinsically induced by the adsorbed oxygen hole-like concentration [10] ) to n-type, and further isolation from ambient environment (air) to prevent oxygen adsorption. This significantly complicates the practical use of n-type CNTs in ambient conditions (air). Another drawback of n-type conductive polymers and their based composites is poor stability in air, resulting in decrease of electrical conductivity by orders of magnitude when exposed to air even for a short period of time. [10] The use of organic-inorganic nanocomposites has shown the greatest potential for engineering efficient flexible thermoelectric devices. In this work, a novel approach of encapsulation of as-grown bismuth selenide-multiwalled carbon nanotubes (Bi 2 Se 3 -MWCNT) hybrid network in polyvinyl alcohol for fabrication of n-type flexible thermoelectric films is demonstrated as a successful alternative to the mechanically mixed counterparts. The developed stable flexible n-type thermoelectric material has a Seebeck coefficient and power factor at room temperature as high as −85 μV K −1 and 0.4 μW m −1 K −2 , and figure-of-merit, exceeding the value shown by the mixed counterpart by ≈2 orders of magnitude, while requiring 3-4 times less inorganic material in comparison with mixed composites. Charge carrier transport mechanisms and contribution of Bi 2 Se 3 and MWCNT components of not encapsulated and encapsulated hybrid networks to the total Seebeck coefficient, electrical conductance, and power factor are studied. In addition, the fabricated flexible thermoelectric films show good environmental stability at relative humidity levels up to 60%, as well as great mechanical and electrical stability with the increase of resistance within 0.5% and deviations of the Seebeck coefficient within 2% from the initial value during the 100 repetitive bending cycles.

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Structure and Doping Determined Thermoelectric Properties of Bi₂Se₃Thin Films Deposited by Vapour–Solid Technique

Cited by 26 publications

References 26 publications

Thickness-dependent properties of ultrathin bismuth and antimony chalcogenide films formed by physical vapor deposition and their application in thermoelectric generators

Thickness-dependent properties of ultrathin bismuth and antimony chalcogenide films formed by physical vapor deposition and their application in thermoelectric generators

Improved Crystalline Structure and Enhanced Photoluminescence of ZnO Nanolayers in Bi₂Se₃/ZnO Heterostructures

Highly Efficient Flexible n‐Type Thermoelectric Films Formed by Encapsulation of Bi₂Se₃‐MWCNT Hybrid Networks in Polyvinyl Alcohol

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Structure and Doping Determined Thermoelectric Properties of Bi2Se3Thin Films Deposited by Vapour–Solid Technique

Cited by 26 publications

References 26 publications

Thickness-dependent properties of ultrathin bismuth and antimony chalcogenide films formed by physical vapor deposition and their application in thermoelectric generators

Thickness-dependent properties of ultrathin bismuth and antimony chalcogenide films formed by physical vapor deposition and their application in thermoelectric generators

Improved Crystalline Structure and Enhanced Photoluminescence of ZnO Nanolayers in Bi2Se3/ZnO Heterostructures

Highly Efficient Flexible n‐Type Thermoelectric Films Formed by Encapsulation of Bi2Se3‐MWCNT Hybrid Networks in Polyvinyl Alcohol

Contact Info

Product

Resources

About

Structure and Doping Determined Thermoelectric Properties of Bi₂Se₃Thin Films Deposited by Vapour–Solid Technique

Improved Crystalline Structure and Enhanced Photoluminescence of ZnO Nanolayers in Bi₂Se₃/ZnO Heterostructures

Highly Efficient Flexible n‐Type Thermoelectric Films Formed by Encapsulation of Bi₂Se₃‐MWCNT Hybrid Networks in Polyvinyl Alcohol