Structure investigation of photo-CVD silicon nitride films by IR and ESR spectroscopy

Nikolić, G Marko

doi:10.1016/0042-207x(90)90140-t

Cited by 7 publications

(1 citation statement)

References 14 publications

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“…Due to the Hg toxicity and metal contamination concerns mentioned previously, this work was quickly followed by demonstrations of direct photolytic CVD of SiO2 , 526,552 and SiN 500,553,554 using ArF 499 excimer lasers or Hg, 500,551,553 D2, 526 or excimer 552 lamps. While the SiO2 and SiN films produced by both methods exhibited comparable electrical and optical properties to those for films produced by plasma-enhanced CVD methods, 497,555,556,557,558 the later became the dominant method within the industry for deposition of intra-and inter-metal electrical isolation layers. 559 Photo-assisted deposition methods have also been explored for more front-end-of-line (FEOL) related applications such as low temperature growth of SiO2 535,560,561 and high- oxide 562 gate dielectric materials on semiconductors such as Si, 535,559,560,561 SiC, 563 GaAs, 564 InP, 565 and GaN 566 .…”

Section: V32 Uv-assisted Film Depositionmentioning

confidence: 99%

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Baklanov

Jousseaume

Рахимова

et al. 2019

Applied Physics Reviews

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This paper presents an in-depth overview of the application and impact of UV/VUV light in advanced interconnect technology. UV light application in BEOL historically was mainly motivated by the need to remove organic porogen and generate porosity in organosilicate (OSG) low-k films. Porosity lowered the film's dielectric constant, k, which enables one to reduce the interconnect wiring capacitance contribution to the RC signal delay in integrated circuits. The UV-based low-k film curing (λ > 200 nm) proved superior to thermal annealing and electron beam curing. UV and VUV light also play a significant role in plasma-induced damage to pSiCOH. VUV light with λ < 190–200 nm is able to break Si-CH3 bonds and to make low-k materials hydrophilic. The following moisture adsorption degrades the low-k properties and reliability. This fact motivated research into the mechanisms of UV/VUV photon interactions in pSiCOH films and in other materials used in BEOL nanofabrication. Today, the mechanisms of UV/VUV photon interactions with pSiCOH and other films used in interconnect fabrication are fairly well understood after nearly two decades of research. This understanding has allowed engineers to both control the damaging effects of photons and utilize the UV light for material engineering and nanofabrication processes. Some UV-based technological solutions, such as low-k curing and UV-induced stress engineering, have already been widely adopted for high volume manufacturing. Nevertheless, the challenges in nanoscaling technology may promote more widespread adoption of photon-assisted processing. We hope that fundamental insights and prospected applications described in this article will help the reader to find the optimal way in this wide and rapidly developing technology area.

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