Structure of epitaxial Gd2O3 films and their registry on GaAs(100) substrates

Bolliger, B.; Erbudak, M.; Hong, M.; Kwo, J.; Kortan, A. R.; Mannáerts, J. P.

doi:10.1002/1096-9918(200008)30:1<514::aid-sia760>3.0.co;2-k

Cited by 6 publications

(6 citation statements)

References 7 publications

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“…In addition, the ͑001͒ plane of the Gd 2 O 3 cell is parallel to the (01 1) plane of the GaAs substrate. 1,2,6 The total area of the sample surface investigated here, exposing the ͑110͒ plane of Gd 2 O 3 , is approximately 7ϫ7 mm 2 . The samples were fabricated and exposed to air for several months before insertion into vacuum.…”

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Structural modifications of theGd2O3(110)films on GaAs(100)

et al. 2000

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We report an fcc structure for the epitaxial Gd 2 O 3 films grown on GaAs͑100͒. This fluorite-derived structure appears to be stabilized by epitaxy with the substrate and has a great similarity to the GaAs structure. A model calculation supports this finding. Our secondary-electron imaging studies of these nanometer-thick films reveal that the films are cubic as deposited, and this structure can be derived from the stable ␣-phase of the Gd 2 O 3 by a mild Ne ϩ-ion bombardment and a subsequent anneal. These epitaxial Gd 2 O 3 films have great importance because of their excellent surface passivation properties. RAPID COMMUNICATIONS R10 616 PRB 62 C. STEINER et al.

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“…Consequently, Gd 2 O 3 films in this structure are arranged in an epitaxial orientation with the ͑100͒ surface of the GaAs substrate. 2,6 It is essential that the layer be disordered all the way to the interface upon ion bombardment. Only then does the substrate influence the growth of a passivation layer with fourfold-symmetry, as observed.…”

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Structural modifications of theGd2O3(110)films on GaAs(100)

et al. 2000

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“…1,6 The cubic ␣-Gd 2 O 3 films, with a lattice constant of 10.81 Å, showed a crystallographic alignment of the film normal ͑110͒ parallel to GaAs͑100͒ surface normal. [8][9][10] When the Gd 2 O 3 growth rate was slowed, a new reflection high-energy electron diffraction ͑RHEED͒ pattern was observed, which showed an in-plane symmetry of fourfold, rather a usual symmetry of twofold in the cubic ␣-Gd 2 O 3 ͑110͒. These cubic ␣-phase films were fully strained below a critical thickness of about 30 Å.…”

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New phase formation of Gd2O3 films on GaAs(100)

Kortan¹,

Hong²,

Kwo³

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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A fluorite-related phase of Gd 2 O 3 , with a tetragonal unit cell of aϭ5.65 Å and cϭ5.37 Å, was attained in this study. The new phase was found either in a thin Gd 2 O 3 film ͑ϳ18 Å͒, which was epitaxially grown on GaAs͑100͒, or in a disordered ͑by mild Ne ϩ -ion sputtering͒ and recrystallized ͑by UHV annealing͒ thin cubic ␣-Gd 2 O 3 film. The structural characteristics of the new oxide films were studied using in situ reflection high-energy electron diffraction, secondary-electron imaging, and single-crystal x-ray diffraction.

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“…One of the topics of interest is to develop a practical technique for depositing high-quality gate oxide of the devices as that in the case of Si-based devices. A number of dielectrics such as Al 2 O 3 [1], SiO 2 [2] and Gd 2 O 3 [3] have been used as a gate oxide in the MOS structures. However, these dielectrics were deposited externally on the semiconductor surface, and hence the properties of the formed oxide/semiconductor 3 Author to whom any correspondence should be addressed.…”

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GaAs metal-oxide-semiconductor devices with a complex gate oxide composed of SiO₂and GaAs oxide grown using a photoelectrochemical oxidation method

Lee

Lin

2009

Semicond. Sci. Technol.

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In this study, a SiO 2 /GaAs oxide bi-layer layer was used as the gate oxide in GaAs-based metal-oxide-semiconductor (MOS) devices. The GaAs oxide layer of the bi-layer layer was directly formed on the GaAs surface by using the photoelectrochemical (PEC) oxidation method. Some samples were thermally treated at 200 • C and 300 • C in O 2 ambience for 30 min. The surface state density of the oxide/GaAs interface with and without GaAs oxide thermal treatment was 7.2 × 10 11 and 7.9 × 10 11 cm −2 eV −1 , respectively. The GaAs MOS field effect transistors (MOSFETs) with the PEC-deposited GaAs oxide thermally treated showed an output current of 152 mA mm −1 at V DS = 2.4 V and V GS = 0 V and an extrinsic transconductance of 89 mS mm −1 .

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Structure of epitaxial Gd2O3 films and their registry on GaAs(100) substrates

Cited by 6 publications

References 7 publications

Structural modifications of theGd2O3(110)films on GaAs(100)

Structural modifications of theGd2O3(110)films on GaAs(100)

New phase formation of Gd2O3 films on GaAs(100)

GaAs metal-oxide-semiconductor devices with a complex gate oxide composed of SiO₂and GaAs oxide grown using a photoelectrochemical oxidation method

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Structure of epitaxial Gd2O3 films and their registry on GaAs(100) substrates

Cited by 6 publications

References 7 publications

Structural modifications of theGd2O3(110)films on GaAs(100)

Structural modifications of theGd2O3(110)films on GaAs(100)

New phase formation of Gd2O3 films on GaAs(100)

GaAs metal-oxide-semiconductor devices with a complex gate oxide composed of SiO2and GaAs oxide grown using a photoelectrochemical oxidation method

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GaAs metal-oxide-semiconductor devices with a complex gate oxide composed of SiO₂and GaAs oxide grown using a photoelectrochemical oxidation method