Defect engineering is considered as one of the most efficient strategies to regulate the electronic structure of materials and involves the manipulation of the types, concentrations, and spatial distributions of defects, resulting in unprecedented properties. It is shown that a single-layered MnO 2 nanosheet with vacancies is a robust half-metal, which was confirmed by theoretical calculations, whereas vacancyfree single-layered MnO 2 is a typical semiconductor. The halfmetallicity of the single-layered MnO 2 nanosheet can be observed for a wide range of vacancy concentrations and even in the co-presence of Mn and O vacancies. This work enables the development of half-metals by defect engineering of well-established low-dimensional materials, which may be used for the design of next-generation paper-like spintronics.Half-metals, with a metallic nature for one spin and an insulating/semiconducting nature for the opposite spin, are considered as ideal materials for applications in spintronics, because their carriers are theoretically 100 % spin-polarized. [1,2] To date, various half-metals have been reported, which are mainly based on bulk oxides, Heusler alloys, or perovskites, whereas attention has rarely been paid to the half-metallicity in low-dimensional materials.