Studies on the structural and electrical properties of spray deposited SnO2:Sb thin films as a function of substrate temperature

Elangovan, E.; Ramesh, K.; Ramamurthi, K.

doi:10.1016/j.ssc.2004.03.015

Cited by 50 publications

(27 citation statements)

References 17 publications

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“…The preferred (200) orientation was also reported by Elangovan et al [6]. This behavior with Sb doping implies that in the present case, antimony incorporation in SnO 2 lattice has not affected the structural properties to a considerable extent.…”

Section: Methodssupporting

confidence: 87%

“…In addition, they exhibit low electrical resistivity and high optical transmittance. Either doped or non-doped, tin oxide thin films can be fabricated by a number of techniques: chemical vapor deposition [1], sputtering [2], sol-gel coating [3], and spray pyrolysis [4][5][6]. The sol-gel method has such advantages as cheap cost and flexible deposition technique.…”

Section: Introductionmentioning

confidence: 99%

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Retracted: Structural, electrical, and optical properties of ATO thin films fabricated by dip coating method

Hammad

Hejazy

2012

Int Nano Lett

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Antimony-doped tin oxide (ATO) thin films were prepared by dip coating method. The effect of antimony doping on the structural, electrical, and optical properties of tin oxide thin films were investigated. Tin(II) chloride dehydrate (SnCl 2 ·4H 2 O) and antimony(III) chloride (SbCl 3 ) were used as a host and a dopant precursor, respectively. X-ray diffraction analysis showed that the non-doped SnO 2 thin film had a preferred (211) orientation, but as the Sb doping concentration increased, a preferred (200) orientation was observed. The lowest resistivity (about 5.4 × 10 −3 Ω cm) was obtained for Sb-doped films at 2 at.%. Antimony doping led to an increase in the carrier concentration and a decrease in Hall mobility. The transmittance of ATO films was observed to increase to 96% at 2 at.% Sb doping, and then, it was decreased for a higher level of antimony doping.

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Section: Methodssupporting

confidence: 87%

Section: Introductionmentioning

confidence: 99%

Retracted: Structural, electrical, and optical properties of ATO thin films fabricated by dip coating method

Hammad

Hejazy

2012

Int Nano Lett

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“…22 Similarly, a high carrier concentration value of 10 19 cm À3 has been reported at room temperature in undoped SnO 2 films. 15,16 From Fig. 4, it can be seen that the electrical conductivity of the SnO 2 films is increased substantially by Sb doping.…”

Section: Resultsmentioning

confidence: 97%

“…17,18 The conductivity of our undoped sample is high compared with values listed in the literature. 15,19 The high conductivity observed in the undoped film is attributed to deviation from stoichiometry due to oxygen vacancies, 20,21 which act as electron donors and increase the carrier concentration. 22 Similarly, a high carrier concentration value of 10 19 cm À3 has been reported at room temperature in undoped SnO 2 films.…”

Section: Resultsmentioning

confidence: 99%

Electron–Electron Interactions in Sb-Doped SnO2 Thin Films

Seri̇n

Yıldız

Serin

et al. 2010

Journal of Elec Materi

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Electrical conductivity and Hall-effect measurements on undoped and Sb-doped SnO 2 thin films prepared by the sol-gel technique were carried out as a function of temperature (55 K to 300 K). Structural characterizations of the films were performed by atomic force microscopy (AFM) and x-ray diffraction (XRD). A doping-induced metal-insulator transition (MIT) was observed. On the metallic side of the transition, the experimental data were interpreted in terms of electron-electron interactions (EEI). The existence of EEI was confirmed by excellent agreement between theoretical and experimental data. The experimental data on the insulator side of the transition were analyzed in terms of variable-range hopping (VRH) conduction. A complete set of parameters describing the properties of the localized electrons, including hopping energy, hopping distance, and the value of the density of states at the Fermi level, was determined.

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“…Doped and undoped tin oxide films have been deposited by several methods [10][11][12][13][14]. Bagheri et al [15] prepared SnO 2 -ZnO films by conventional spray pyrolysis using O 2 as carrier gas.…”

Section: Introductionmentioning

confidence: 99%

Nanocrystalline transparent SnO₂‐ZnO films fabricated at lower substrate temperature using a low‐cost and simplified spray technique

Ravichandran¹,

Sakthivel²,

Philominathan³

2010

Cryst. Res. Technol.

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Nanocrystalline and transparent conducting SnO 2 -ZnO films were fabricated by employing an inexpensive, simplified spray technique using a perfume atomizer at relatively low substrate temperature (360±5 °C) compared with conventional spray method. The structural studies reveal that the SnO 2 -ZnO films are polycrystalline in nature with preferential orientation along the (101) plane. The dislocation density is very low (1.48×10 15 lines/m 2 ), indicating the good crystallinity of the films. The crystallite size of the films was found to be in the range of 26-34 nm. The optical transmittance in the visible range and the optical band gap are 85% and 3.6 eV respectively. The sheet resistance increases from 8.74 kΩ/ to 32.4 kΩ/ as the zinc concentration increases from 0 to 40 at.%. The films were found to have desirable figure of merit (1.63×10-2 (Ω/ ) -1 ), low temperature coefficient of resistance (-1.191/K) and good thermal stability. This simplified spray technique may be considered as a promising alternative to conventional spray for the massive production of economic SnO 2 -ZnO films for solar cells, sensors and opto-electronic applications.

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Studies on the structural and electrical properties of spray deposited SnO2:Sb thin films as a function of substrate temperature

Cited by 50 publications

References 17 publications

Retracted: Structural, electrical, and optical properties of ATO thin films fabricated by dip coating method

Retracted: Structural, electrical, and optical properties of ATO thin films fabricated by dip coating method

Electron–Electron Interactions in Sb-Doped SnO2 Thin Films

Nanocrystalline transparent SnO₂‐ZnO films fabricated at lower substrate temperature using a low‐cost and simplified spray technique

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Studies on the structural and electrical properties of spray deposited SnO2:Sb thin films as a function of substrate temperature

Cited by 50 publications

References 17 publications

Retracted: Structural, electrical, and optical properties of ATO thin films fabricated by dip coating method

Retracted: Structural, electrical, and optical properties of ATO thin films fabricated by dip coating method

Electron–Electron Interactions in Sb-Doped SnO2 Thin Films

Nanocrystalline transparent SnO2‐ZnO films fabricated at lower substrate temperature using a low‐cost and simplified spray technique

Contact Info

Product

Resources

About

Nanocrystalline transparent SnO₂‐ZnO films fabricated at lower substrate temperature using a low‐cost and simplified spray technique