Study and improvement of interfacial properties in a MIS structure based on p-type InP

Chellali, Mohammed Reda; Tizi, S.; Benamara, Z.; Amrani, M.; Boudissa, A.; Talbi, A.; Gruzza, B.

doi:10.1016/s0042-207x(03)00109-x

Cited by 9 publications

(5 citation statements)

References 10 publications

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“…For V>-5 Volts, it's the inversion region, the capacitance increases with the temperature, we have an injection phenomenon, this results are in good agreement with literature [7].…”

Section: Discussionsupporting

confidence: 92%

Analysis of C-V Characteristics of InP(p)/InSb/Al2O3/Au MIS Structures in Wide Temperature Range

Benamara

Talbi

Benamara

et al. 2013

AMR

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Superscript textThe III-V semiconductors materials and in particularly Indium Phosphide are a promising candidates for the elaboration of high speed electronic compounds. The importance of the interface study is increasing considerably in the last years to understand, the mechanism of interface formations and to control perfectly the technology of the elaborated compounds. This study presents an electrical characterization of InP(p)/InSb/Al2O3/ Au structures in the range of temperature varying from the temperature of liquid nitrogen to the temperature of 400°K. In order to give the evolution of electrical parameters of these structures with temperature, we have realized Capacitance-Voltage measurements at high frequency for different temperatures. The found results show that there is dispersion in the accumulation region as function with temperature. The quantity of positive charges in the insulator is estimated to 1.37×1012 atm/cm2 at room temperature. This value decreases slightly with increasing temperature. It varies fromSuperscript text 1.57×1012 atm/cm2 at 77°K to 1.12×1012 atm/cm2 at 400°K. The interface insulator/semiconductor of our samples presents a good electronical quality, the state density is equal to 4.1011 eV-1.cm-2 at room temperature, this one increases from 4.7×1010 eV-1.cm-2 to 7.1011 eV-1.cm-2 when temperature increases from 77°K to 400°K.

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“…For V>-5 Volts, it's the inversion region, the capacitance increases with the temperature, we have an injection phenomenon, this results are in good agreement with literature [7].…”

Section: Discussionsupporting

confidence: 92%

Analysis of C-V Characteristics of InP(p)/InSb/Al2O3/Au MIS Structures in Wide Temperature Range

Benamara

Talbi

Benamara

et al. 2013

AMR

Self Cite

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“…The values of interface state density (N ss ) min (¼10 12 eV À 1 cm À 2 ) are reasonable for metal/InP SBDs [64][65][66][67][68]. The interface states and interfacial layer between the metal/semiconductor structures play an important role in the determination of the characteristic parameters of the devices.…”

Section: The Current-voltage and Capacitance-voltage Characteristicsmentioning

confidence: 99%

The effects of annealing on Au/pyronine-B/MD n-InP Schottky structure

Soylu

Abay

Onganer

2010

Journal of Physics and Chemistry of Solids

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“…In almost every case, the Schottky barrier height ͑SBH͒ has been found to be rather lower than desirable for most device applications. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] The performance and reliability of Schottky devices largely depend on the distribution and the density of the interface states. [1][2][3][4][5] Many attempts to increase the barrier heights of Schottky contacts have been performed by forming an interfacial layer between the metal and semiconductor.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] Therefore, metal-insulator-semiconductor ͑MIS͒-type structures and their stabilities have been studied by various researchers. Chellali et al 15 have investigated the Al 2 O 3 / InP and Al 2 O 3 / InSb: InP MIS structure for improvement of interfacial properties in a MIS structure based on the p-type InP. Hattori and Torii 2 formed an interfacial layer by deposition of P x O y .…”

Section: Introductionmentioning

confidence: 99%

Barrier height enhancement and stability of the Au∕n-InP Schottky barrier diodes oxidized by absorbed water vapor

Çetin

Ayyıldız

Türüt

2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have fabricated the Au/ n-InP Schottky barrier diodes ͑SBDs͒ with and without an intentionally grown interfacial oxide layer. The oxide layer on chemically cleaned indium phosphide ͑InP͒ surface has been obtained by exposure to water vapor at 1 ml/ min at 200°C before metal evaporation. The chemical composition of the surface oxides grown on the InP is investigated using x-ray photoelectron spectroscopy. Phosphorus is present as In͑PO 3 ͒ 3 , InPO 4 , P 2 O 5 and elemental P. The influence of the oxide on the Schottky barrier formation and contact stability at the InP ͑100͒ surface upon subsequent metal deposition has been investigated. The transport properties of the metal-semiconductor contacts have been observed to be significantly affected by the presence of the interfacial oxide layer. Thus, the barrier height has been increased by ϳ140 meV for the Au/ n-InP SBD by means of the interfacial oxide grown by use of absorbed water vapor. Furthermore, in order to observe the effect of the aging in the Au/ n-InP SBD with and without the interfacial oxide layer, the current-voltage ͑I-V͒ measurements have also been repeated 7, 14, 28, 45, 56, and 70 days after fabrication of these diodes. The obtained diode parameters were examined statistically and it was found that the reference and oxidized Au/ n-InP SBDs exhibited stable characteristics 14 days after metal deposition.

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Study and improvement of interfacial properties in a MIS structure based on p-type InP

Cited by 9 publications

References 10 publications

Analysis of C-V Characteristics of InP(p)/InSb/Al<sub>2</sub>O<sub>3</sub>/Au MIS Structures in Wide Temperature Range

Analysis of C-V Characteristics of InP(p)/InSb/Al<sub>2</sub>O<sub>3</sub>/Au MIS Structures in Wide Temperature Range

The effects of annealing on Au/pyronine-B/MD n-InP Schottky structure

Barrier height enhancement and stability of the Au∕n-InP Schottky barrier diodes oxidized by absorbed water vapor

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