Study of Cluster Magnetorheological-Chemical Mechanical Polishing Technology for the Atomic Scale Ultra-Smooth Surface Planarization of SiC

Zhu, Jiang; Lu, Jianjiang; Pan, Ji Sheng; Yan, Qiu Sheng; Xu, Xipeng

doi:10.4028/www.scientific.net/amr.797.284

Cited by 12 publications

(5 citation statements)

References 10 publications

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“…The contribution of abrasives to material removal rate ranged from 63.41% to 91.42%, while tool pad and chemical effects ranged from 4.81% to 10.37% and 3.74% to 26.22%, respectively. Zhu et al 76 on a 6H-SiC substrate, used MR-chemical mechanical polishing (MRCMP) to achieve an atomic-scale zero-defect surface. When polished for 60 minutes, the surface roughness of SiC decreased from 50.86 nm to 0.42 nm, with material removal of the order of 98 nm/min.…”

Section: Microelectronics Component Processingmentioning

confidence: 99%

Chemomechanical magnetorheological finishing: Process mechanism, research trends, challenges and opportunities in surface finishing

Kumar

Singh

2021

Journal of Micromanufacturing

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Chemomechanical magnetorheological finishing (CMMRF) has emerged as a nanofinishing method that combines the characteristics of chemical mechanical polishing (CMP) and magneto-rheological finishing (MRF). The CMMRF process was designed to take into account both the chemical and mechanical effects that occur during the finishing process. In the field of material processing science, this article delves into the fundamentals of the CMMRF method. The potential research patterns linked to CMMRF are assessed and their benefits are determined. Furthermore, the challenges of improving CMMRF process capabilities, as well as the wide futuristic opportunities of the research sector, are emphasised, along with meeting all industrial needs. The findings of this analysis paper will also aid researchers in the field of advanced finishing in identifying process realisation for better results.

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Section: Microelectronics Component Processingmentioning

confidence: 99%

Chemomechanical magnetorheological finishing: Process mechanism, research trends, challenges and opportunities in surface finishing

Kumar

Singh

2021

Journal of Micromanufacturing

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“…However, apart from the high cost of equipment, the processing efficiency of the MR polishing method is very low. In our previous work, our research group proposed a cluster MR polishing technology with 'the flexible polishing pad' formed by the cluster MR fluid [18][19][20]. Compared with the traditional MR polishing method, the surface roughness Ra of the single-crystal sapphire polished by the cluster MR polishing decreased from 1.36 nm to 0.76 nm, and the MRR increased from 4.37 to 9.53 nm min −1 [21].…”

Section: Introductionmentioning

confidence: 99%

Investigation of cluster magnetorheological electro-Fenton composite polishing process for single-crystal GaN wafer based on BBD experimental method

Zheng,

Wu,

Pan

et al. 2024

Smart Mater. Struct.

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A cluster magnetorheological (MR) electro-Fenton composite polishing technique was proposed in this work, which can realize high efficiency, ultra-smooth and damage-free of GaN wafer by the synergistic effect of electro-Fenton reaction and flexible mechanical removal of MR polishing. The key parameters of electro-Fenton were optimized through methyl orange degradation experiments based on experimental BBD method. The results showed that the decolorization rate had a strong dependence on H2O2 concentration, Fe-C concentration and pH value, where the decolorization rate had the maximum value when the H2O2 concentration of 5 wt%, Fe-C concentration of 3 wt% and pH value of 3. Compared with the Fenton reaction, the decolorization and REDOX potential of methyl orange solution were significantly improved in the electro-Fenton reaction. Furthermore, the process parameters of the cluster MR electro-Fenton composite polishing were optimized to obtain the best polishing result, which was realized under the conditions of 3 wt% diamond (grain size: 0.5 µm), a polishing gap of 0.9 mm and a polishing time of 60 min. The novel method achieved a material removal rate (MRR) of 10.79 μm/h, which was much higher than that of the conventional technique. In addition, an ultra-smooth and damage-free surface with a roughness of 1.29 nm Ra was obtained.

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“…Therefore, based on the MR finishing principle and cluster mechanism (magnetic poles arrange in a regular array), we proposed a cluster MR finishing with dynamic magnetic fields formed by multiple synchronous rotation magnetic poles. This method was applied to machine single-crystal SiC to decline their surface roughness from 50.86 nm to 0.42 nm [15].…”

Section: Introductionmentioning

confidence: 99%

Optimization study on magnetorheological fluid components and process parameters of cluster magnetorheological finishing with dynamic magnetic field for sapphire substrates

Pan¹,

Zheng²,

Yan³

et al. 2020

Smart Mater. Struct.

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Sapphire is used as the base material of high-brightness LED devices, high-speed and high-frequency wireless communication devices, and solar photovoltaic conversion chips. Its surface quality determines the performance of the device. Magnetorheological (MR) finishing can avoid scratches and surface/subsurface damage caused by uneven abrasive particles due to the viscoelasticity of the polishing pad. When MR polishing was used to polish sapphire substrates, the adaptability of the MR fluid components and the rationality of polishing process was the key to quickly obtain high-quality workpiece surface. In this study, sapphire substrates were polished using cluster MR finishing with dynamic magnetic fields formed by multiple synchronous rotation magnetic poles. The components of the MR fluid were optimized by single-factor experiments, and the polishing process parameters were optimized through orthogonal experiment. The results showed that an ultra-smooth surface of Ra 0.27 nm could be obtained when sapphire substrate was polished 8 h by using the optimized MR fluid, which contained 120 nm silica sol with a mass fraction of 8 wt% and W3 carbonyl iron powders with a mass fraction of 16 wt%, also with the optimized process parameters as the machining gap, the workpiece speed, the magnetic pole speed and the rotation speed of the polishing disc were 1 mm, 350 r min−1, 45 r min−1 and 40 r min−1, respectively.

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Study of Cluster Magnetorheological-Chemical Mechanical Polishing Technology for the Atomic Scale Ultra-Smooth Surface Planarization of SiC

Cited by 12 publications

References 10 publications

Chemomechanical magnetorheological finishing: Process mechanism, research trends, challenges and opportunities in surface finishing

Chemomechanical magnetorheological finishing: Process mechanism, research trends, challenges and opportunities in surface finishing

Investigation of cluster magnetorheological electro-Fenton composite polishing process for single-crystal GaN wafer based on BBD experimental method

Optimization study on magnetorheological fluid components and process parameters of cluster magnetorheological finishing with dynamic magnetic field for sapphire substrates

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