Study of different type of dislocations in GaN thin films

Effect of thickness on structural and electrical properties of GaN films grown on SiN-treated sapphire

“…[25]. The influence of the dislocations on the electronic properties has been widely studied [5,6]. However, the sensitivity of the carrier mobility to the different type of dislocations was rarely studied.…”

“…[17] it was reported that the carrier mobility is more sensitive to screw dislocations type and that edge dislocations have not a direct influence on carrier mobility. Yu et al [6] reported that both the screw and edge dislocations affect the carrier mobility. Recently, Zhao et al [26] reported that both electron mobility and carrier concentration are not influenced by the FWHM of o-scan rocking curve for the (00.2) plane, but strongly influenced by the edge dislocations density.…”

“…Shi et al [5] reported that both the carrier mobility and the intensity of photoluminescence are related to the edge and screw dislocations interaction. Some studies have shown that the different type of dislocations affect differently the properties of GaN films [6,7]. In general, the mosaic structure is undesirable as it impedes the optical and electrical properties of the film.…”

Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition

“…In this paper, the extrapolation method developed by Srikant et al [10] was used to analyze experimental data. Shi et al [15] and Yu et al [16] have successfully used this method to study the TDs in GaN films. In this method, the rocking curves of five planes are measured for each sample: (0 0 0 2), ð1 01 3Þ, ð1 01 2Þ, ð1 01 1Þ, ð2 02 1Þ.…”

New nitridation technique for mosaicity control in RF‐MBE InN growth

“…The mosaicity is defined by the tilt and the twist angle fluctuations that have been already 300 arc-seconds for the tilt and 500 arc-seconds for the twist angle fluctuations, for the GaN grown by OMVPE. [1] However, the mosaicity control for the InN has not been enough up to now in comparison with the GaN system, in spite of many efforts by several research groups [2,3].…”