Study of electromagnetic moments in unstable nuclei with radioactive nuclear beams

Asahı, K.; Kameda, D.; Ueno, H.; Yoshimi, A.; Uchida, M.; Miyoshi, Hiromi; Shimada, K.; Nagae, D.; Kijima, G.; Haseyama, T.; Watanabe, H.; Takemura, Makoto; Arai, T.; Oshima, Sachiko; Umeya, Atsushi

doi:10.1088/1742-6596/20/1/010

Cited by 1 publication

(5 citation statements)

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“…All clusters were interstitial on [113] planes. The relatively long incubation period [9] can be explained by the differences in electron beam intensity and accelerating voltage. The implantation of gaseous atoms should be accelerated by increased intensity and energy of the electrons, as will be discussed in section 4.…”

Section: Irradiation Behavior Of Fz-simentioning

confidence: 99%

“…). However, as clusters formed only at the electron incident surface [9], as illustrated in Fig. 10, this assumption cannot be accepted.…”

Section: Mechanism Of Cluster Growthmentioning

confidence: 99%

“…The following important results were obtained. Many of the point defect clusters formed during electron irradiation between 35 K to 923 K are rod-like clusters on {113} planes elongated in the <110> direction [3][4][5][6][7][8][9]. These clusters are interstitial-type [5,[7][8][9].…”

Section: Introductionmentioning

confidence: 99%

“…Many of the point defect clusters formed during electron irradiation between 35 K to 923 K are rod-like clusters on {113} planes elongated in the <110> direction [3][4][5][6][7][8][9]. These clusters are interstitial-type [5,[7][8][9]. The atomic structure of the clusters were determined by high resolution electron microscopy [10] and energy calculations [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

“…In Czochralski grown silicon (Cz-Si), {113} interstitial clusters are formed immediately after electron irradiation at high temperatures (573-673 K), and appear homogeneously throughout the matrix. In floating-zone silicon (Fz-Si), {113} interstitial clusters nucleate and grow only near the electron incident surface, after a long incubation period [9]. This difference is due to pre-existing oxygen impurities in Cz-Si.…”

Section: Introductionmentioning

confidence: 99%

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Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation

Nakai

Hamada

Satoh

et al. 2011

Philosophical Magazine

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The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Cz-Si, Fz-Si, and impurity-doped Fz-Si (HT-Fz-Si) using a high voltage electron microscope. In Fz-Si, {113} interstitial clusters were formed only near the beam incident surface after a long incubation period, and shrank on subsequent irradiation from the backside of the specimen. In Cz-Si and HT-Fz-Si, {113} interstitial clusters nucleated uniformly throughout the specimen without incubation, and began to shrink under prolonged irradiation at higher electron beam intensity. At lower beam intensity, however, the {113} interstitial cluster grew stably. These results demonstrate that the {113} interstitial cluster cannot grow without a continuous supply of impurities during electron irradiation. Detailed kinetics of {113} interstitial cluster growth and shrinkage in silicon, including the effects of impurities, are proposed. Then, experimental results are analyzed using rate equations based on these kinetics.

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Section: Irradiation Behavior Of Fz-simentioning

confidence: 99%

“…). However, as clusters formed only at the electron incident surface [9], as illustrated in Fig. 10, this assumption cannot be accepted.…”

Section: Mechanism Of Cluster Growthmentioning

confidence: 99%