Study of external quantum efficiency of plasmonic coupled bilayer active device: influence of layer thickness and nanoparticle filling factor

Low‐Power Crystallization Process in In3SbTe2 Phase Change Memory Devices with Thin Oxide Layer

“…These two phases merge into the single IST phase at higher temperature. [ 9,13–15 ] In‐3 d , Sb‐3 d , and Te‐3 d core‐level spectra in amorphous IST layer are analyzed for devices with/without the oxide (HfO 2 ) layer. In‐3 d , illustrated in Figure 3a, consists of InSb and In 2 Te 3 bonds, [ 14,15 ] which are shifted by 0.33 and 0.11 eV, respectively, in the device with the oxide layer.…”

“…[ 9,13–15 ] In‐3 d , Sb‐3 d , and Te‐3 d core‐level spectra in amorphous IST layer are analyzed for devices with/without the oxide (HfO 2 ) layer. In‐3 d , illustrated in Figure 3a, consists of InSb and In 2 Te 3 bonds, [ 14,15 ] which are shifted by 0.33 and 0.11 eV, respectively, in the device with the oxide layer. Sb‐3 d spectrum displays InSb bond, [ 14,15 ] and Te‐3 d spectrum shows InTe and In 2 Te 3 bonds [ 14,15 ] with small binding energy displacements in the device with the oxide layer, portrayed in Figure 3b,c respectively.…”

“…[ 4–7 ] Novel phase change materials like In 3 SbTe 2 (IST) are explored to solve these issues. [ 9–15 ] With a higher T c of 290 °C and significant resistance contrast between the phases, IST offers improved thermal stability and multiple data storage, making it suitable for high‐density PCM device applications. [ 9–15 ] Although this technology has demonstrated a lot of potential, issues like reducing power usage are currently being addressed.…”

“…[ 9–15 ] With a higher T c of 290 °C and significant resistance contrast between the phases, IST offers improved thermal stability and multiple data storage, making it suitable for high‐density PCM device applications. [ 9–15 ] Although this technology has demonstrated a lot of potential, issues like reducing power usage are currently being addressed. Researchers have focused on minimizing the power consumption in the PCM device by restructuring device geometry, [ 7,16,17 ] modifying material composition [ 18,19 ] and mitigating heat loss by incorporating an interfacial layer like TiO 2 , [ 20,21 ] HfO 2 , [ 22–24 ] Ta 2 O 5 , [ 25 ] Bi 2 Te 3 , [ 26 ] MoS 2 , [ 27 ] and graphene [ 28 ] below the phase change layer in the PCM device.…”

Boundary graphene layer effect on surface plasmon oscillations in a quantum plasma half-space

“…The physical characteristics of surface waves has attracted a great interest in theoretical, numerical, and experimental investigations in many fields of plasma science and technology such as plasma spectroscopy, surface science, nanoelectronic devices with surface Plasmons which can be excited and transmitted in metal thin films, laser physics, overdense plasma heating and so on [1][2][3][4][5][6][7][8][9][10]. These waves can propagate along the boundary of two different mediums with different signs of the real part of dielectric response function [11] and evanescent on either side of it.…”