Study of extreme ultraviolet lithography patterned mask inspection tool for half-pitch 11-nm node defect detection performance

One of the challenges of actinic metrology tools for EUV lithography is the availability of light sources with high brightness, stability, and availability. In particular, actinic patterned mask inspection on EUV reticles is considered an essential tool for the EUV lithography ecosystem and it requires an EUV source of high brightness. We present the design of a compact and accelerator-based light source producing EUV radiation with high-brightness for actinic metrology applications in the semiconductor industry. Our design is based on the well-established components and design principles. The specifications required for actinic mask inspection is achieved using a short period undulator and 430 MeV electron energy. The concentric design of storage and booster rings enables stable operation with a relatively small footprint. This study shows the commercial viability of a compact and high-brightness EUV source with high stability and reliability and demonstrates its feasibility for actinic metrology applications.

show abstract

EUV multilayer defect characterization via cycle-consistent learning

Chen

Lin

Chen

et al. 2020

Opt. Express

View full text Add to dashboard Cite

Extreme ultraviolet (EUV) lithography mask defects may cause severe reflectivity deformation and phase shift in advanced nodes, especially like multilayer defects. Geometric parameter characterization is essential for mask defect compensation or repair. In this paper, we propose a machine learning framework to predict the geometric parameters of multilayer defects on EUV mask blanks. With the proposed inception modules and cycle-consistent learning techniques, the framework enables a novel way of defect characterization with high accuracy.

show abstract

Study of extreme ultraviolet lithography patterned mask inspection tool for half-pitch 11-nm node defect detection performance

Cited by 3 publications

References 17 publications

Identification of multilayer structures using secondary electron yield curves: effect of native oxide films on EUV-patterned mask inspection

Identification of multilayer structures using secondary electron yield curves: effect of native oxide films on EUV-patterned mask inspection

A high-brightness accelerator-based EUV source for metrology applications

EUV multilayer defect characterization via cycle-consistent learning

Contact Info

Product

Resources

About