Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes

Gaubas, E.; Uleckas, A.; Rafi, JM; Chen, J; Yang, Deren; Vanhellemont, Jan

doi:10.1016/j.physb.2011.08.056

Cited by 3 publications

(4 citation statements)

References 10 publications

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“…To prevent the formation of oxygen-related thermal donors and to enhance so the radiation hardness of Si material, doping with isovalent impurities of Ge can be a reasonable solution. 68,69 The slower increase of donors in Ge-doped Cz Si (GCz) material can be deduced from Fig. 27 compared to that obtained in standard Cz material.…”

Section: Table I the Ratio Of Capture Cross-section For Minority And ...mentioning

confidence: 91%

“…Samples were diode structures fabricated on n-and p-type Cz Si with starting interstitial oxygen (O i ) contents ranging Effective doping, evaluated through the control of the carrier concentration, and inverse recombination lifetime as a function of isothermal annealing time in Cz and Ge-doped (GCz) Si, illustrate the formation of thermal donors. 68,69 from 7 × 10 17 to 1.1 × 10 18 cm −3 (new ASTM standard). Precipitates were formed in these samples by a 750 • C 8 h nucleation and a 975 • C 10 h anneal before p-n diode processing.…”

Section: Spectroscopy Of Defects By Temperature Dependent Carrier Lif...mentioning

confidence: 99%

“…Figure27. Effective doping, evaluated through the control of the carrier concentration, and inverse recombination lifetime as a function of isothermal annealing time in Cz and Ge-doped (GCz) Si, illustrate the formation of thermal donors 68,69. …”

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confidence: 99%

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Review—Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices

Gaubas

Simoen

Vanhellemont

2016

ECS J. Solid State Sci. Technol.

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A review on applications of the contact-less carrier inspection techniques for characterization of various materials is presented, based on recording of the microwave probed photo-conductivity (MW-PC) and free carrier infrared absorption (IR-FCA) transients. Comparison of characteristics measured by these techniques with data obtained by alternative methods is discussed. The models and principles of carrier lifetime description are briefly analyzed. Instrumentation and schemes for implementation of the MW-PC and IR-FCA techniques are presented. Applications of carrier lifetime measurements for material and defect characterization on different structures are illustrated.

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Section: Table I the Ratio Of Capture Cross-section For Minority And ...mentioning

confidence: 91%

Section: Spectroscopy Of Defects By Temperature Dependent Carrier Lif...mentioning

confidence: 99%

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Review—Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices

Gaubas

Simoen

Vanhellemont

2016

ECS J. Solid State Sci. Technol.

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“…Changes of the relative amplitudes of TDD and V-O peaks within the O-I-DLTS spectra clearly indicate the creation of the vacancy associated complexes through the radiation induced vacancy migration. Incorporating of the isovalent impurities, such as Ge, may considerably suppress the formation of V-O centres, and the TDD density prevails then over the density of V-O complexes [10].…”

Section: Deep Level Spectramentioning

confidence: 99%

Optically induced current deep level spectroscopy of radiation defects in neutron irradiated Si pad detectors

Gaubas¹,

Bajarūnas²,

Čeponis³

et al. 2013

Lith. J. Phys.

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Identification of the prevailing radiation defects of large density remains a considerable issue for particle detectors made of high resistivity Si. To clarify the dominant radiation induced traps within CERN standard Si pad detectors, the capacitance (C-) and current (I-) deep level transient spectroscopy (DLTS) techniques have been combined. Additionally, the optical (O-) injection I-DLTS regime has been employed to cover a wide range of neutron irradiation fluences of 10 12-10 16 cm-2. The spectra of C-DLTS and O-I-DLTS have been recorded using the temperature scans in the range of 20-300 K. The radiation induced vacancy (V) attributed defects such as V-O, V 2 , and clusters have been identified, the density of which increases with irradiation fluence in the range of 10 12-10 14 cm-2 , while this density saturates for the collected neutron fluence of more than 10 14 cm-2 .

show abstract

Optically induced current deep level spectroscopy of radiation defects in neutron irradiated Si pad detectors

Gaubas¹,

Bajarūnas²,

Čeponis³

et al. 2013

Lith. J. Phys.

View full text Add to dashboard Cite

Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes

Cited by 3 publications

References 10 publications

Review—Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices

Review—Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices

Optically induced current deep level spectroscopy of radiation defects in neutron irradiated Si pad detectors

Optically induced current deep level spectroscopy of radiation defects in neutron irradiated Si pad detectors

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