Study of nickel silicide contact on Si/Si_1-xGe_x

Abstract

The properties of nickel silicide formed by depositing nickel on Si P + Si 1 x Ge x layer are compared with that of nickel germanosilicide on P + Si 1 x Ge x layer formed by depositing Ni directly on P + Si 1 x Ge x layer without silicon consuming layer. After thermal annealing, nickel silicide on Si P + Si 1 x Ge x layer shows lower sheet resistance and specific contact resistivity than that of nickel germanosilicide on P + Si 1 x Ge x layer. In addition, small junction leakage current is also observed for nickel silicide on Si P + Si 1 x Gex N Si diode. In summary, with a Si consuming layer on top of the Si 1 x Ge x , the nickel silicide contact formed demonstrated improved electrical and materials characteristics as compared with the nickel germanosilicide contact which was formed directly on Si 1 x Ge x layer.

Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS

“…Recently, SiGe technology was introduced into high-performance strain-induced CMOS technology. [1,2] A high quality of nickel germanosilicide is nec-essary as well. In this paper, the abnormal oxidation and agglomeration on Si and SiGe substrates are discovered after high-temperature post-silicide annealing.…”

Selective Epitaxial Growth of Heavily Boron-Doped Silicon with Uniform Doping Depth Profile

“…Although metal germanosilicide contact with low resistivity can be formed on borondoped SiGe film, such contact is prone to morphological degradation and higher resistivity at elevated annealing temperature due to germanium segregation [1]. It has been found that by using a Silicon capping layer on SiGe, the nickel silicide (NiSi) contact formed showed improved morphological stability and electrical characteristics compared with the nickel germanosilicide contact formed directly on SiGe [2]. With this regard, epitaxial growth of boron-doped silicon (Si:B) has recently drawn increasing attention.…”