Study of phase transition and electrical resistivity of tantalum nitride films prepared by DC magnetron sputtering with OES detection system

Lu, Yang‐Ming; Weng, Ruey-Jer; Hwang, Weng-Sing; Yang, Yu

doi:10.1016/s0040-6090(01)01342-6

Cited by 36 publications

(20 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This assumption is confirmed as the solid-solution Ta-N crystallises predominantly in the bcc-modification (Frisk 1998) and also underlayers of TaN faciliate the generation of a-Ta (Gladczuk et al 2005). Basically, the general increase in resistivity with enhanced nitrogen content in the sputter gas is in good agreement with data published for reactively sputter deposited (Sun et al 1993;Ayerdi et al 1994;Lu et al 2001a;Chen et al 1999Chen et al , 2001Lu et al 2001b;Riekkinen, et al 2002;Chang et al 2002;Chung 2007) and chemical vapour deposited TaN x films (Hieber 1974). Between 25 and 50% N 2 in the sputter gas, the values for the resistivity are almost constant.…”

Section: Resistivity Measurementssupporting

confidence: 85%

“…The evolution of the phases in the order of Ta 2 N, TaN and Ta 3 N 5 with increasing nitrogen content is typical (Schauer et al 1971;Schauer and Roschy 1972;Hieber 1974). In our investigations, Ta 5 N 6 could only be detected at low nitrogen concentrations and not at high levels (Sun et al 1993;Baba and Hatada 1996;Lu et al 2001b).…”

Section: Resistivity Measurementssupporting

confidence: 46%

“…Basically, for a low nitrogen concentration in the deposition chamber, phases such as Ta 2 N (Lu et al 2001b;Shin et al 2002;Valleti et al 2008;Chang et al 2002), TaN 0.1 (Shin et al 2002;Valleti et al 2008) and TaN (Chang et al 2002), are reported, but also the presence of N-saturated a-Ta can be found which changes to Ta 2 N (Chang et al 2002). In our case the presence of a pure tantalum phase within the TaN_20 samples can be excluded when compared to results gained under similar deposition conditions (Grosser and Schmid 2009).…”

Section: Phase Composition Inmentioning

confidence: 99%

“…These results are consistent with the GDOES measurements which show nitrogen contents of about 50% for TaN_40 samples. Furthermore, TaN is often reported to be one of the most possible phases in the Ta-N system when using reactive magnetron sputtering on silicon based substrates (Lu et al 2001b;Riekkinen et al 2002;Shin et al 2002;Valleti et al 2008;Chang et al 2002). Figure 8 shows the diffractogramms recorded at TaN_80 films.…”

Section: Phase Composition Inmentioning

confidence: 99%

See 3 more Smart Citations

Study on microstructural, chemical and electrical properties of tantalum nitride thin films deposited by reactive direct current magnetron sputtering

et al. 2010

View full text Add to dashboard Cite

The properties of tantalum nitride (TaN x ) thin films on silicon and low temperature co-fired ceramics based substrates were investigated with respect to their potential use for sensor elements operated under harsh environmental conditions. For deposition reactive direct current magnetron sputtering was applied at constant back pressure (=0.9 Pa) and plasma power (=1,000 W). In all experiments, the substrates were nominally unheated. The films were investigated electrically by four point probing. For morphological and chemical analyses, a large variety of techniques such as focussed ion beam, scanning electron microscopy, X-ray diffraction, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and glow discharge optical emission spectroscopy were used. Only by combining all these techniques for analysing TaN x films synthesised with varying nitrogen content in the deposition chamber can a proper evaluation of the microstructure and the chemical composition be done. Both the microstructure and the chemical composition are influenced strongly with a resulting effect on the electrical film properties.

show abstract

Section: Resistivity Measurementssupporting

confidence: 85%

Section: Resistivity Measurementssupporting

confidence: 46%

Section: Phase Composition Inmentioning

confidence: 99%

Section: Phase Composition Inmentioning

confidence: 99%

See 2 more Smart Citations

Study on microstructural, chemical and electrical properties of tantalum nitride thin films deposited by reactive direct current magnetron sputtering

et al. 2010

View full text Add to dashboard Cite

show abstract

“…At larger N 2 flow rates up to 35 sccm, TaN films with near stoichiometric composition and with high temperature stability are deposited. In the flow regime above, the drastic increase of the R 500 /R as ratio is attributed to a pure incorporation of nitrogen into the polycrystalline lattice, which effuses during annealing [11]. Finally, the R 500 /R as ratio decreases as the TaN thin films are synthesized in a temperature stable phase.…”

Section: Reactivly Sputtered Tantalum Nitride Thin Films and Multilayersmentioning

confidence: 94%

Tantalum based multilayers for high temperature sensor applications

et al. 2008

View full text Add to dashboard Cite

In this study, the impact of post deposition annealings performed at 500°C in air up to 12 h on the electrical performance and the microstructure of sputterdeposited tantalum (Ta) and tantalum nitride (TaN) thin films is investigated. Morphological investigations are done using techniques such as focused ion beam and X-ray diffraction. A multi-layered metallization is proposed consisting of a porous Ta start layer and a dense Ta mid layer. The TaN top film serves for passivation purposes. Compared to the "as deposited" state, the increase in sheet resistance of the three layered set-up is about 50% upon annealing for 12 h.

show abstract

Effects of nitrogen composition on the resistivity of reactively sputtered TaN thin films

Arshi

Joo

et al. 2014

Surf. Interface Anal.

View full text Add to dashboard Cite

*Nanocrystalline tantalum nitride (TaN) thin films have been deposited by reactive direct current magnetron sputtering technique on Si/SiO 2 (100) substrate with nitrogen flow rate ranging from 0, 3, 5, 7, 9 to 11 standard cubic centimeter per minute (sccm). Structural properties, surface morphology, chemical composition and and resistivity of the TaN films were investigated by Xray diffraction (XRD), field emission scanning electron microscopy, X-ray photoemission spectroscopy (XPS) and four-point probe measurements, respectively. In the XRD spectra, a classical formation sequence of tantalum nitride phases in the order of Ta-Ta 2 NTaN-Ta 4 N 5 and decreasing amount of metallic Ta were observed with increasing nitrogen flow. The electrical resistivity of the TaN film was found to increase with increasing N/Ta ratio as a result of the increased electron scattering from interstitial N atoms. In the XPS analysis, two groups of Ta4f doublets relating to different TaN phases were observed in the core level spectra of TaN films. No strong coupling was observed between the Ta4f doublets and the Ta4p and the N1s groups. The appropriate nitrogen flow was believed to be helpful in the bonding and formation of stoichiometric TaN.

show abstract

Study of phase transition and electrical resistivity of tantalum nitride films prepared by DC magnetron sputtering with OES detection system

Cited by 36 publications

References 8 publications

Study on microstructural, chemical and electrical properties of tantalum nitride thin films deposited by reactive direct current magnetron sputtering

Study on microstructural, chemical and electrical properties of tantalum nitride thin films deposited by reactive direct current magnetron sputtering

Tantalum based multilayers for high temperature sensor applications

Effects of nitrogen composition on the resistivity of reactively sputtered TaN thin films

Contact Info

Product

Resources

About