Study of poly(3-hexylthiophene)/cross-linked poly(vinyl alcohol) as semiconductor/insulator for application in low voltage organic field effect transistors

Benvenho, Adriano R. V.; Machado, Wagner S.; Cruz-Cruz, Isidro; Hümmelgen, Ivo A.

doi:10.1063/1.4809285

Cited by 33 publications

(25 citation statements)

References 40 publications

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“…Considering the loss curve obtained for PVA, the second relaxation is not as evident as the first, suggesting the contribution of only one charge trap. This low‐frequency loss relaxation can be attributed to ketone groups originating from ─OH oxidation, remembering that ketone groups can also bind trapped charges . In the case of PVA–melanin, the second relaxation observed may be associated with the free redox species, as already mentioned.…”

Section: Resultsmentioning

confidence: 99%

Ultraviolet‐protective thin film based on PVA–melanin/rod‐coated silver nanowires and its application as a transparent capacitor

Albano

Paulin

Trino

et al. 2019

J of Applied Polymer Sci

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Melanin is a biopigment in many organisms with interesting intrinsic properties suitable for emerging and sustainable technologies. In this work, we report the fabrication of transparent ultraviolet (UV)‐protective thin films based on synthetic melanin in poly(vinyl alcohol) (PVA) matrixes. Melanin was synthesized through the auto‐oxidation of l‐3,4‐dihydroxyphenylalanine (l‐DOPA) under oxygen pressure, resulting in excellent solubility in water. A thin film with a composition of 3 wt % melanin (synthesized at 6 atm oxygen pressure) and silver nanowires (AgNWs) deposited on the surface has good transparency in visible light and 100% UV irradiation photoprotection. Encapsulated PVA–melanin/AgNW films dipped in water for 7 days retained 98% of their UV irradiation photoprotection. Moreover, using a transparent conductive oxide substrate, this UV‐protective system can be simultaneously used as a transparent capacitor. © 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019, 136, 47805.

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Section: Resultsmentioning

confidence: 99%

Ultraviolet‐protective thin film based on PVA–melanin/rod‐coated silver nanowires and its application as a transparent capacitor

Albano

Paulin

Trino

et al. 2019

J of Applied Polymer Sci

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“…This dependence of µ on l 0 can be understood assuming the presence of traps at the S/I interface. Those traps may originate from charged chemical species on the surface of the cr‐PVA layer . They locally increase the energetic disorder in this region which may result in lower effective mobilities for charge carriers flowing near the S/I interface when V GS is high (or, correspondingly, when l 0 is very narrow).…”

Section: Resultsmentioning

confidence: 99%

“…As a consequence, the structural and electrical properties near this interface play a crucial role in the transistor performance. Interface roughness, difference in molecular conformation or organization, or the presence of charged domains or dipoles at the interface , which imply in incremented energetic disorder in the interface vicinity, may strongly affect the percolation paths for charge carrier transport from source to drain . This effect is more pronounced in the bottleneck region, where the carrier flow is confined to the vicinities of the interface.…”

Section: Introductionmentioning

confidence: 99%

Improved charge carrier mobility in copper phthalocyanine based field effect transistors by insertion of a thin poorly conducting layer as gate insulator extension

Jastrombek

Tavares

Meruvia

et al. 2015

Physica Status Solidi (a)

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The charge carrier mobility is an important parameter that directly affects the performance of organic field‐effect transistors. We use copper phthalocyanine (CuPc)‐based transistors having crosslinked poly(vinyl alcohol) (cr‐PVA) as gate insulator to study the variation of the mobility in CuPc with the distance from the gate insulator interface. By measuring the mobility of the charge carriers flowing along the channel as a function of the minimum thickness of the effective channel near to the transistor source, we demonstrate that the mobility is low near to the interface and shows a maximum at approximately 5 nm from the interface. The mobility dependence on distance from interface can be modified through the inclusion of a poorly conducting thin PEDOT:PSS layer between gate insulator and channel semiconductor, which effectively acts as a gate insulator extension. This procedure is a simple but efficient strategy to improve organic field‐effect transistor performance, positively affecting the transconductance and the mobility, which in the studied devices is increased by a factor 20. The improvement is attributed to the suppression of the deleterious consequences of interface charge traps on transport along the channel and is, in principle, a general approach applicable to other organic field‐effect transistor materials combinations.

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“…Thus, one common way to improve PVA stability is to crosslink with ammonium dichromate (AD) [59]. The best performance of poly(3-hexylthiphene)-based OFETs was observed with mobility of 0.12 cm 2 V −1 s −1 and operation voltage of −5 V while the ratio of AD/PVA was 25%/75% [51]. Furthermore, incorporating high-κ nanoparticles into polymer can also be utilized to enhance the capacitance of the dielectrics [60][61][62][63][64].…”

Section: Methodsmentioning

confidence: 99%

Low-power-consumption organic field-effect transistors

et al. 2020

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At present, the electrical performance of organic field-effect transistors (OFETs) has reached the level of commercial amorphous silicon. OFETs show considerable application potential in artificial intelligence, deep learning algorithms, and artificial skin sensors. The devices which can operate with high performance and low power consumption are needed for these applications. The recent energyrelated improvement to realize low-power consumption OFETs were reviewed, including minimizing operating voltage, reducing subthreshold swing, and decreasing contact resistance. In this review, we demonstrate breakthroughs in materials and methods to decrease power consumption, providing a promising avenue toward low-power consumption organic electronics. IntroductionFollowing the seminal paper from Tsumura, in which he demonstrated the first polythiophene-based field-effect transistor in 1986, organic field-effect transistors (OFETs) have received tremendous developments due to the intriguing properties of organic semiconductors, such as flexibility, stretchability, biocompatibility, solution processibility, and low cost [1][2][3][4]. To date, the field-effect mobility, which is the main character of an OFET device, has increased over 40 cm 2 V −1 s −1 . With the improvements in electric performance, the large-scale integration of OFETs have facilitated impressive application demonstrations, including organic light-emitting diode displays, radiofrequency identification tagging, and artificial skin [5][6][7][8][9][10][11][12]. To meet the future demand for product miniaturization and high properties, the number and density of transistors need to be increased, thus the heat energy caused by the power dissipation will lead to the degradation of organic materials and the life reduction of devices [13][14][15][16][17][18][19]. In addition, high power consumption limits the applications of most portable electronics which need an external battery [20][21][22][23]. All of these demands in applications require transistors to operate with extremely low-power consumption. However, power dissipation of most OFETs suffers from a high operating voltage typically a few tens of volts, which has a quadratic effect on dynamic power consumption [3,[24][25][26][27][28][29]. Furthermore, transistors sizes are also now approaching the point where quantum effects become appreciable, which can lead to an increased gate leakage current due to quantum tunneling and, in turn, an increased static power consumption.Achieving extremely energy-efficient OFETs is an essential prerequisite for commercial applications. After years of expansive development, significant advancements have been made in fabricating high quality dielectrics, thus reducing the operating voltage and leakage current. Furthermore, the subthreshold slope, which is negative correlation with switching efficiency, has witnessed a significant decrease driven by the process optimization and interface engineering [6,[30][31][32]. Additionally, the contact between semiconductors and electro...

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Study of poly(3-hexylthiophene)/cross-linked poly(vinyl alcohol) as semiconductor/insulator for application in low voltage organic field effect transistors

Cited by 33 publications

References 40 publications

Ultraviolet‐protective thin film based on PVA–melanin/rod‐coated silver nanowires and its application as a transparent capacitor

Ultraviolet‐protective thin film based on PVA–melanin/rod‐coated silver nanowires and its application as a transparent capacitor

Improved charge carrier mobility in copper phthalocyanine based field effect transistors by insertion of a thin poorly conducting layer as gate insulator extension

Low-power-consumption organic field-effect transistors

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