Study of program defects of 22nm nanoimprint template with an advanced e-beam inspection system

Hiraka, Takaaki; Mizuochi, Jun; Nakanishi, Yuko; Yusa, Satoshi; Sasaki, Shiho; Kurihara, Masaaki; Toyama, Nobuhito; Morikawa, Yasutaka; Mohri, Hiroshi; Hayashi, Naoya; Xiao, H.; Kuan, Chiyan; Wang, Fei; Ma, Long; Zhao, Yan; Jau, Jack

doi:10.1117/12.834581

Cited by 3 publications

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“…In order to achieve less than 22 nm, next generation alternative patterning technique such as extreme ultraviolet (EUV), electron beam (EB), and nano imprint lithography are reported. [1][2][3][4][5][6][7][8][9] Each of these techniques presents new technical challenges that must be overcome before introduction into a manufactability. Step and flash nano imprint lithography was developed at the University of Texas at Austin and Molecular Imprint Inc. is one of the most effective alternative lithographic techniques (Fig.…”

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confidence: 99%

Step and Flash Nano Imprint Lithography of 80 nm Dense Line Pattern Using Trehalose Derivative Resist Material

Takei

2010

Appl. Phys. Express

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High resolution trehalose derivative resist which had specific desired properties was successfully developed for step and flash nano imprint lithography as one of advanced alternative lithography techniques. Step and flash nano imprint lithography is expected to be a high resolution, thin residual resist thickness, an ambient temperature and cost reduction technique in manufacturing. Excellent 80 nm dense line patterning was demonstrated in nano imprint lithography with ultraviolet crosslinking process. Lower film thickness shrinkage of the newly developed liquid trehalose derivative resist than that of acrylate type resist was one of key to achieve high resolution nano imprint patterns.

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Step and Flash Nano Imprint Lithography of 80 nm Dense Line Pattern Using Trehalose Derivative Resist Material

Takei

2010

Appl. Phys. Express

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“…Template inspection results on a high end e-beam inspection tool (Hermes Microvision eXplore5200) using a 10 nm pixel size and "leap and scan mode" showed reliable detection of 22 nm clear defects and 30 nm opaque defects on 28 nm half-pitch features. 45 Defects as small as 4 nm were detected in some instances. Full-field (26×33 mm) e-beam inspection of 1× nanoimprint templates has been estimated to take from 1 to 8 days depending on pixel size and type of inspection (die-to-die, die-to-database).…”

Section: Defectivitymentioning

confidence: 98%

Technology review and assessment of nanoimprint lithography for semiconductor and patterned media manufacturing

Malloy¹

2011

J. Micro/Nanolith. MEMS MOEMS

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The semiconductor and hard disk drive industries are investigating nanoimprint for future high volume manufacturing of memory devices and patterned media. Nanoimprint, a form of 1× contact lithography, is one of the few technologies capable of meeting the resolution requirements for next generation electronic and storage devices. Its ability to produce small features with low line width roughness and critical dimension uniformity has been demonstrated by multiple sources. Significant improvements in defectivity have been shown; overlay has improved to within a factor of 2 of that required by the International Technology Roadmap for Semiconductors for 22 nm node flash memory devices; and next generation tools, templates, and processes are being commercialized and tested at end-user sites. Defectivity, throughput, and infrastructure remain as critical challenges, but each has experienced marked improvements in the past year. This technology review and assessment covers critical aspects of nanoimprint for both semiconductor and patterned media manufacturing. It focuses on jet and flash imprint lithography, the type of nanoimprint most often considered for these two applications. The requirements and current status of nanoimprint with respect to high volume manufacturing are presented, and critical aspects are discussed. C 2011 Society of PhotoOptical Instrumentation Engineers (SPIE).

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“…The master template should be inspected by an EB inspection tool, 25) which can resolve the pattern, to guarantee that the pattern is the same as a given layout. This master template inspection is needed only once for each master template.…”

Section: Template Inspectionmentioning

confidence: 99%

Metrology and inspection required for next generation lithography

Asano¹,

Yoshikawa²,

Hirano³

et al. 2017

Jpn. J. Appl. Phys.

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We summarize the metrology and inspection required for the development of nanoimprint lithography (NIL) and directed self-assembly (DSA), which are recognized as candidates for next generation lithography. For NIL, template inspection and residual layer thickness (RLT) metrology are discussed. An optical-based inspection tool for replica template inspection showed sensitivity for defects below 10 nm with sufficient throughput. Scatterometry was applied for RLT metrology. Feedback control with scatterometry improved RLT uniformity across an imprinting field. For DSA, metrology for image placement and cross-sectional profile are addressed. Design-based scanning electron microscope (SEM) metrology utilizing a die-to-database electron beam (EB) inspection tool was effective for image placement metrology. For the cross-sectional profile, a holistic approach combining scatterometry and critical dimension SEM was developed. The technologies discussed here will be important when NIL and DSA are applied for IC manufacturing, as well as in the development phases of those lithography technologies.

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Study of program defects of 22nm nanoimprint template with an advanced e-beam inspection system

Cited by 3 publications

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Step and Flash Nano Imprint Lithography of 80 nm Dense Line Pattern Using Trehalose Derivative Resist Material

Step and Flash Nano Imprint Lithography of 80 nm Dense Line Pattern Using Trehalose Derivative Resist Material

Technology review and assessment of nanoimprint lithography for semiconductor and patterned media manufacturing

Metrology and inspection required for next generation lithography

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